FP75R12KT4P EconoPIM3 /IGBT NTC EconoPIM3 module with fast Trench/Fieldstop IGBT4 and Emitter Controlled 4 diode and NTC / pre-applied Thermal Interface Material VCES = 1200V I = 75A / I = 150A C nom CRM Typical Applications Auxiliary inverters Motor drives Servo drives Electrical Features Low switching losses V Low V CEsat CEsat T = 150C T = 150C vj op vj op V V with positive temperature coefficient CEsat CEsat Mechanical Features High power and thermal cycling capability NTC Integrated NTC temperature sensor Copper base plate Solder contact technology Standard housing Pre-applied Thermal Interface Material Module Label Code Barcode Code 128 Content of the Code Digit Module Serial Number 1 - 5 Module Material Number 6 - 11 Production Order Number 12 - 19 DMX - Code Datecode (Production Year) 20 - 21 Datecode (Production Week) 22 - 23 Datasheet Please read the Important Notice and Warnings at the end of this document V 3.0 www.infineon.com 2017-03-17FP75R12KT4P IGBT, / IGBT,Inverter / Maximum Rated Values T = 25C V 1200 V vj CES Collector-emitter voltage TH = 75C, Tvj max = 175C IC nom 75 A Continuous DC collector current t = 1 ms I 150 A P CRM Repetitive peak collector current VGES +/-20 V Gate-emitter peak voltage / Characteristic Values min. typ. max. IC = 75 A, VGE = 15 V Tvj = 25C 1,85 2,15 V Collector-emitter saturation voltage I = 75 A, V = 15 V T = 125C V 2,15 V C GE vj CE sat IC = 75 A, VGE = 15 V Tvj = 150C 2,25 V IC = 2,40 mA, VCE = VGE, Tvj = 25C VGEth 5,20 5,80 6,40 V Gate threshold voltage V = -15 V ... +15 V Q 0,57 C GE G Gate charge Tvj = 25C RGint 10 Internal gate resistor f = 1 MHz, T = 25C, V = 25 V, V = 0 V C 4,30 nF vj CE GE ies Input capacitance f = 1 MHz, Tvj = 25C, VCE = 25 V, VGE = 0 V Cres 0,16 nF Reverse transfer capacitance - V = 1200 V, V = 0 V, T = 25C I 1,0 mA CE GE vj CES Collector-emitter cut-off current - VCE = 0 V, VGE = 20 V, Tvj = 25C IGES 100 nA Gate-emitter leakage current () IC = 75 A, VCE = 600 V Tvj = 25C 0,16 s t d on Turn-on delay time, inductive load V = 15 V T = 125C 0,17 s GE vj R = 1,1 T = 150C 0,17 s Gon vj () IC = 75 A, VCE = 600 V Tvj = 25C 0,03 s t r Rise time, inductive load V = 15 V T = 125C 0,04 s GE vj R = 1,1 T = 150C 0,04 s Gon vj () I = 75 A, V = 600 V T = 25C 0,34 s C CE vj t d off Turn-off delay time, inductive load V = 15 V T = 125C 0,43 s GE vj R = 1,1 T = 150C 0,45 s Goff vj () I = 75 A, V = 600 V T = 25C 0,08 s C CE vj t f Fall time, inductive load V = 15 V T = 125C 0,15 s GE vj R = 1,1 T = 150C 0,17 s Goff vj () I = 75 A, V = 600 V, L = 40 nH T = 25C 3,10 mJ C CE S vj Turn-on energy loss per pulse V = 15 V, di/dt = 2500 A/s (T = 150C) T = 125C E 6,60 mJ GE vj vj on R = 1,1 T = 150C 7,65 mJ Gon vj ( I = 75 A, V = 600 V, L = 40 nH T = 25C 4,20 mJ C CE S vj Turn-off energy loss per pulse V = 15 V, du/dt = 3600 V/s (T = 150C)T = 125C E 6,40 mJ GE vj vj off R = 1,1 T = 150C 7,20 mJ Goff vj V 15 V, V = 800 V GE CC I SC SC data V = V -L di/dt t 10 s, T = 150C 270 A CEmax CES sCE P vj IGBT / per IGBT RthJH 0,481 K/W Thermal resistance, junction to heatsink valid with IFX pre-applied thermal interface material T -40 150 C vj op Temperature under switching conditions Datasheet 2 V 3.0 2017-03-17