X-On Electronics has gained recognition as a prominent supplier of FP75R12KT4PBPSA1 IGBT Modules across the USA, India, Europe, Australia, and various other global locations. FP75R12KT4PBPSA1 IGBT Modules are a product manufactured by Infineon. We provide cost-effective solutions for IGBT Modules, ensuring timely deliveries around the world.

FP75R12KT4PBPSA1 Infineon

FP75R12KT4PBPSA1 electronic component of Infineon
FP75R12KT4PBPSA1 Infineon
FP75R12KT4PBPSA1 IGBT Modules
FP75R12KT4PBPSA1  Semiconductors

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Part No. FP75R12KT4PBPSA1
Manufacturer: Infineon
Category: IGBT Modules
Description: IGBT Modules LOW POWER ECONO
Datasheet: FP75R12KT4PBPSA1 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 169.8658 ea
Line Total: USD 169.87 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Mon. 07 Apr to Wed. 09 Apr
MOQ : 1
Multiples : 1
1 : USD 169.8658

   
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We are delighted to provide the FP75R12KT4PBPSA1 from our IGBT Modules category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the FP75R12KT4PBPSA1 and other electronic components in the IGBT Modules category and beyond.

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FP75R12KT4P EconoPIM3 /IGBT NTC EconoPIM3 module with fast Trench/Fieldstop IGBT4 and Emitter Controlled 4 diode and NTC / pre-applied Thermal Interface Material VCES = 1200V I = 75A / I = 150A C nom CRM Typical Applications Auxiliary inverters Motor drives Servo drives Electrical Features Low switching losses V Low V CEsat CEsat T = 150C T = 150C vj op vj op V V with positive temperature coefficient CEsat CEsat Mechanical Features High power and thermal cycling capability NTC Integrated NTC temperature sensor Copper base plate Solder contact technology Standard housing Pre-applied Thermal Interface Material Module Label Code Barcode Code 128 Content of the Code Digit Module Serial Number 1 - 5 Module Material Number 6 - 11 Production Order Number 12 - 19 DMX - Code Datecode (Production Year) 20 - 21 Datecode (Production Week) 22 - 23 Datasheet Please read the Important Notice and Warnings at the end of this document V 3.0 www.infineon.com 2017-03-17FP75R12KT4P IGBT, / IGBT,Inverter / Maximum Rated Values T = 25C V 1200 V vj CES Collector-emitter voltage TH = 75C, Tvj max = 175C IC nom 75 A Continuous DC collector current t = 1 ms I 150 A P CRM Repetitive peak collector current VGES +/-20 V Gate-emitter peak voltage / Characteristic Values min. typ. max. IC = 75 A, VGE = 15 V Tvj = 25C 1,85 2,15 V Collector-emitter saturation voltage I = 75 A, V = 15 V T = 125C V 2,15 V C GE vj CE sat IC = 75 A, VGE = 15 V Tvj = 150C 2,25 V IC = 2,40 mA, VCE = VGE, Tvj = 25C VGEth 5,20 5,80 6,40 V Gate threshold voltage V = -15 V ... +15 V Q 0,57 C GE G Gate charge Tvj = 25C RGint 10 Internal gate resistor f = 1 MHz, T = 25C, V = 25 V, V = 0 V C 4,30 nF vj CE GE ies Input capacitance f = 1 MHz, Tvj = 25C, VCE = 25 V, VGE = 0 V Cres 0,16 nF Reverse transfer capacitance - V = 1200 V, V = 0 V, T = 25C I 1,0 mA CE GE vj CES Collector-emitter cut-off current - VCE = 0 V, VGE = 20 V, Tvj = 25C IGES 100 nA Gate-emitter leakage current () IC = 75 A, VCE = 600 V Tvj = 25C 0,16 s t d on Turn-on delay time, inductive load V = 15 V T = 125C 0,17 s GE vj R = 1,1 T = 150C 0,17 s Gon vj () IC = 75 A, VCE = 600 V Tvj = 25C 0,03 s t r Rise time, inductive load V = 15 V T = 125C 0,04 s GE vj R = 1,1 T = 150C 0,04 s Gon vj () I = 75 A, V = 600 V T = 25C 0,34 s C CE vj t d off Turn-off delay time, inductive load V = 15 V T = 125C 0,43 s GE vj R = 1,1 T = 150C 0,45 s Goff vj () I = 75 A, V = 600 V T = 25C 0,08 s C CE vj t f Fall time, inductive load V = 15 V T = 125C 0,15 s GE vj R = 1,1 T = 150C 0,17 s Goff vj () I = 75 A, V = 600 V, L = 40 nH T = 25C 3,10 mJ C CE S vj Turn-on energy loss per pulse V = 15 V, di/dt = 2500 A/s (T = 150C) T = 125C E 6,60 mJ GE vj vj on R = 1,1 T = 150C 7,65 mJ Gon vj ( I = 75 A, V = 600 V, L = 40 nH T = 25C 4,20 mJ C CE S vj Turn-off energy loss per pulse V = 15 V, du/dt = 3600 V/s (T = 150C)T = 125C E 6,40 mJ GE vj vj off R = 1,1 T = 150C 7,20 mJ Goff vj V 15 V, V = 800 V GE CC I SC SC data V = V -L di/dt t 10 s, T = 150C 270 A CEmax CES sCE P vj IGBT / per IGBT RthJH 0,481 K/W Thermal resistance, junction to heatsink valid with IFX pre-applied thermal interface material T -40 150 C vj op Temperature under switching conditions Datasheet 2 V 3.0 2017-03-17

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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