Technische Information / Technical Information IGBT-Module FS100R07PE4 IGBT-modules EconoPACK4 Modul mit schnellem Trench/Feldstopp IGBT4 und Emitter Controlled 4 Diode und PressFIT / NTC EconoPACK4 module with fast Trench/Fieldstop IGBT4 and Emitter Controlled 4 diode and PressFIT / NTC Vorlufige Daten / Preliminary Data V = 650V CES I = 100A / I = 200A C nom CRM Typische Anwendungen Typical Applications Hochleistungsumrichter High Power Converters Motorantriebe Motor Drives USV-Systeme UPS Systems Elektrische Eigenschaften Electrical Features Erweiterte Sperrschichttemperatur T vj op Extended Operation Temperature Tvj op Niedrige Schaltverluste Low Switching Losses V mit positivem Temperaturkoeffizienten V with positive Temperature Coefficient CEsat CEsat Mechanische Eigenschaften Mechanical Features 4 kV AC 1min Isolationsfestigkeit 4 kV AC 1min Insulation Standardgehuse Standard Housing Module Label Code Barcode Code 128 Content of the Code Digit Module Serial Number 1 - 5 Module Material Number 6 - 11 Production Order Number 12 - 19 DMX - Code Datecode (Production Year) 20 - 21 Datecode (Production Week) 22 - 23 prepared by: AA date of publication: 2013-11-11 approved by: MK revision: 2.0 UL approved (E83335) 1Technische Information / Technical Information IGBT-Module FS100R07PE4 IGBT-modules Vorlufige Daten Preliminary Data IGBT,Wechselrichter / IGBT,Inverter Hchstzulssige Werte / Maximum Rated Values Kollektor-Emitter-Sperrspannung T = 25C V 650 V vj CES Collector-emitter voltage Kollektor-Dauergleichstrom T = 70C, T = 175C I 100 A C vj max C nom Continuous DC collector current Periodischer Kollektor-Spitzenstrom t = 1 ms I 200 A P CRM Repetitive peak collector current Gesamt-Verlustleistung T = 25C, T = 175C P 335 W C vj max tot Total power dissipation Gate-Emitter-Spitzenspannung VGES +/-20 V Gate-emitter peak voltage Charakteristische Werte / Characteristic Values min. typ. max. Kollektor-Emitter-Sttigungsspannung I = 100 A, V = 15 V T = 25C 1,55 1,95 V C GE vj Collector-emitter saturation voltage I = 100 A, V = 15 V T = 125C V 1,70 V C GE vj CE sat I = 100 A, V = 15 V T = 150C 1,75 V C GE vj Gate-Schwellenspannung I = 1,60 mA, V = V , T = 25C V 5,0 5,8 6,5 V C CE GE vj GEth Gate threshold voltage Gateladung VGE = -15 V ... +15 V QG 1,10 C Gate charge Interner Gatewiderstand T = 25C R 2,0 vj Gint Internal gate resistor Eingangskapazitt f = 1 MHz, Tvj = 25C, VCE = 25 V, VGE = 0 V Cies 6,20 nF Input capacitance Rckwirkungskapazitt f = 1 MHz, T = 25C, V = 25 V, V = 0 V C 0,19 nF vj CE GE res Reverse transfer capacitance Kollektor-Emitter-Reststrom VCE = 650 V, VGE = 0 V, Tvj = 25C ICES 1,0 mA Collector-emitter cut-off current Gate-Emitter-Reststrom V = 0 V, V = 20 V, T = 25C I 400 nA CE GE vj GES Gate-emitter leakage current Einschaltverzgerungszeit, induktive Last I = 100 A, V = 300 V T = 25C 0,05 s C CE vj t d on Turn-on delay time, inductive load VGE = 15 V Tvj = 125C 0,06 s R = 3,9 T = 150C 0,07 s Gon vj Anstiegszeit, induktive Last I = 100 A, V = 300 V T = 25C 0,03 s C CE vj t r Rise time, inductive load VGE = 15 V Tvj = 125C 0,03 s R = 3,9 T = 150C 0,04 s Gon vj Abschaltverzgerungszeit, induktive Last I = 100 A, V = 300 V T = 25C 0,27 s C CE vj t d off Turn-off delay time, inductive load VGE = 15 V Tvj = 125C 0,30 s R = 3,9 T = 150C 0,32 s Goff vj Fallzeit, induktive Last I = 100 A, V = 300 V T = 25C 0,18 s C CE vj t f Fall time, inductive load VGE = 15 V Tvj = 125C 0,27 s R = 3,9 T = 150C 0,29 s Goff vj Einschaltverlustenergie pro Puls I = 100 A, V = 300 V, L = 30 nH T = 25C 0,80 mJ C CE S vj Turn-on energy loss per pulse VGE = 15 V, di/dt = 3350 A/s (Tvj = 150C) Tvj = 125C Eon 1,30 mJ R = 3,9 T = 150C 1,60 mJ Gon vj Abschaltverlustenergie pro Puls I = 100 A, V = 300 V, L = 30 nH T = 25C 3,70 mJ C CE S vj Turn-off energy loss per pulse VGE = 15 V, du/dt = 3300 V/s (Tvj = 150C)Tvj = 125C Eoff 4,90 mJ R = 3,9 T = 150C 5,20 mJ Goff vj Kurzschluverhalten V 15 V, V = 360 V GE CC ISC SC data VCEmax = VCES -LsCE di/dt tP 10 s, Tvj = 150C 400 A Wrmewiderstand, Chip bis Gehuse pro IGBT / per IGBT R 0,45 K/W thJC Thermal resistance, junction to case Wrmewiderstand, Gehuse bis Khlkrper pro IGBT / per IGBT R 0,086 K/W thCH Thermal resistance, case to heatsink Paste = 1 W/(mK) / grease = 1 W/(mK) Temperatur im Schaltbetrieb T -40 150 C vj op Temperature under switching conditions prepared by: AA date of publication: 2013-11-11 approved by: MK revision: 2.0 2