Technische Information / Technical Information IGBT-Module FS100R12KT4G IGBT-modules EconoPACK3 Modul mit Trench/Feldstopp IGBT4 und Emitter Controlled4 Diode EconoPACK3 module with trench/fieldstop IGBT4 and Emitter Controlled4 diode Vorlufige Daten IGBT,Wechselrichter / IGBT,Inverter Preliminary Data Hchstzulssige Werte / Maximum Rated Values Kollektor-Emitter-Sperrspannung T = 25C V 1200 V vj CES Collector-emitter voltage Kollektor-Dauergleichstrom T = 95C, T = 175C I 100 A C vj max C nom Continuous DC collector current Periodischer Kollektor-Spitzenstrom t = 1 ms I 200 A P CRM Repetitive peak collector current Gesamt-Verlustleistung T = 25C, T = 175C P 515 W C vj max tot Total power dissipation Gate-Emitter-Spitzenspannung VGES +/-20 V Gate-emitter peak voltage Charakteristische Werte / Characteristic Values min. typ. max. Kollektor-Emitter-Sttigungsspannung I = 100 A, V = 15 V T = 25C 1,75 2,20 V C GE vj Collector-emitter saturation voltage I = 100 A, V = 15 V T = 125C V 2,05 V C GE vj CE sat I = 100 A, V = 15 V T = 150C 2,10 V C GE vj Gate-Schwellenspannung I = 4,00 mA, V = V , T = 25C V 5,2 5,8 6,4 V C CE GE vj GEth Gate threshold voltage Gateladung VGE = -15 V ... +15 V QG 0,80 C Gate charge Interner Gatewiderstand T = 25C R 7,5 vj Gint Internal gate resistor Eingangskapazitt f = 1 MHz, Tvj = 25C, VCE = 25 V, VGE = 0 V Cies 6,30 nF Input capacitance Rckwirkungskapazitt f = 1 MHz, T = 25C, V = 25 V, V = 0 V C 0,27 nF vj CE GE res Reverse transfer capacitance Kollektor-Emitter-Reststrom VCE = 1200 V, VGE = 0 V, Tvj = 25C ICES 1,0 mA Collector-emitter cut-off current Gate-Emitter-Reststrom V = 0 V, V = 20 V, T = 25C I 100 nA CE GE vj GES Gate-emitter leakage current Einschaltverzgerungszeit, induktive Last I = 100 A, V = 600 V T = 25C 0,115 s C CE vj t d on Turn-on delay time, inductive load VGE = 15 V Tvj = 125C 0,13 s R = 1,6 T = 150C 0,135 s Gon vj Anstiegszeit, induktive Last I = 100 A, V = 600 V T = 25C 0,025 s C CE vj t r Rise time, inductive load VGE = 15 V Tvj = 125C 0,03 s R = 1,6 T = 150C 0,03 s Gon vj Abschaltverzgerungszeit, induktive Last I = 100 A, V = 600 V T = 25C 0,37 s C CE vj t d off Turn-off delay time, inductive load VGE = 15 V Tvj = 125C 0,45 s R = 1,6 T = 150C 0,48 s Goff vj Fallzeit, induktive Last I = 100 A, V = 600 V T = 25C 0,06 s C CE vj t f Fall time, inductive load VGE = 15 V Tvj = 125C 0,08 s R = 1,6 T = 150C 0,09 s Goff vj Einschaltverlustenergie pro Puls I = 100 A, V = 600 V, L = 40 nH T = 25C 4,00 mJ C CE S vj Turn-on energy loss per pulse VGE = 15 V, di/dt = 3700 A/s (Tvj = 150C) Tvj = 125C Eon 6,50 mJ R = 1,6 T = 150C 7,50 mJ Gon vj Abschaltverlustenergie pro Puls I = 100 A, V = 600 V, L = 40 nH T = 25C 5,50 mJ C CE S vj Turn-off energy loss per pulse VGE = 15 V, du/dt = 3600 V/s (Tvj = 150C)Tvj = 125C Eoff 8,50 mJ R = 1,6 T = 150C 9,50 mJ Goff vj Kurzschluverhalten V 15 V, V = 900 V GE CC ISC SC data VCEmax = VCES -LsCE di/dt tP 10 s, Tvj = 150C 360 A Wrmewiderstand, Chip bis Gehuse pro IGBT / per IGBT R 0,29 K/W thJC Thermal resistance, junction to case Wrmewiderstand, Gehuse bis Khlkrper pro IGBT / per IGBT R 0,085 K/W thCH Thermal resistance, case to heatsink Paste = 1 W/(mK) / grease = 1 W/(mK) Temperatur im Schaltbetrieb T -40 150 C vj op Temperature under switching conditions prepared by: CM date of publication: 2013-11-04 approved by: RS revision: 2.0 1Technische Information / Technical Information IGBT-Module FS100R12KT4G IGBT-modules Vorlufige Daten Preliminary Data Diode, Wechselrichter / Diode, Inverter Hchstzulssige Werte / Maximum Rated Values Periodische Spitzensperrspannung T = 25C V 1200 V vj RRM Repetitive peak reverse voltage Dauergleichstrom I 100 A F Continuous DC forward current Periodischer Spitzenstrom t = 1 ms I 200 A P FRM Repetitive peak forward current Grenzlastintegral V = 0 V, t = 10 ms, T = 125C 1550 As R P vj It It - value VR = 0 V, tP = 10 ms, Tvj = 150C 1500 As Charakteristische Werte / Characteristic Values min. typ. max. Durchlassspannung I = 100 A, V = 0 V T = 25C 1,70 2,15 V F GE vj Forward voltage I = 100 A, V = 0 V T = 125C V 1,65 V F GE vj F IF = 100 A, VGE = 0 V Tvj = 150C 1,65 V Rckstromspitze I = 100 A, - di /dt = 3600 A/s (T =150C) T = 25C 150 A F F vj vj Peak reverse recovery current V = 600 V T = 125C I 160 A R vj RM VGE = -15 V Tvj = 150C 165 A Sperrverzgerungsladung I = 100 A, - di /dt = 3600 A/s (T =150C) T = 25C 9,60 C F F vj vj Recovered charge V = 600 V T = 125C Q 17,0 C R vj r VGE = -15 V Tvj = 150C 19,0 C Abschaltenergie pro Puls I = 100 A, - di /dt = 3600 A/s (T =150C) T = 25C 4,10 mJ F F vj vj Reverse recovery energy V = 600 V T = 125C E 7,00 mJ R vj rec VGE = -15 V Tvj = 150C 8,00 mJ Wrmewiderstand, Chip bis Gehuse pro Diode / per diode RthJC 0,50 K/W Thermal resistance, junction to case Wrmewiderstand, Gehuse bis Khlkrper pro Diode / per diode R 0,145 K/W thCH Thermal resistance, case to heatsink = 1 W/(mK) / = 1 W/(mK) Paste grease Temperatur im Schaltbetrieb Tvj op -40 150 C Temperature under switching conditions NTC-Widerstand / NTC-Thermistor Charakteristische Werte / Characteristic Values min. typ. max. Nennwiderstand T = 25C R 5,00 k C 25 Rated resistance Abweichung von R100 TC = 100C, R100 = 493 R/R -5 5 % Deviation of R100 Verlustleistung T = 25C P 20,0 mW C 25 Power dissipation B-Wert R = R exp B (1/T - 1/(298,15 K)) B 3375 K 2 25 25/50 2 25/50 B-value B-Wert R = R exp B (1/T - 1/(298,15 K)) B 3411 K 2 25 25/80 2 25/80 B-value B-Wert R = R exp B (1/T - 1/(298,15 K)) B 3433 K 2 25 25/100 2 25/100 B-value Angaben gem gltiger Application Note. Specification according to the valid application note. prepared by: CM date of publication: 2013-11-04 approved by: RS revision: 2.0 2