Technische Information / Technical Information IGBT-Module FS100R12PT4 IGBT-modules EconoPACK4 Modul mit schnellem Trench/Feldstopp IGBT4 und Emitter Controlled 4 Diode und PressFIT / NTC EconoPACK4 module with fast Trench/Fieldstop IGBT4 and Emitter Controlled 4 diode and PressFIT / NTC Vorlufige Daten / Preliminary Data V = 1200V CES I = 100A / I = 200A C nom CRM Typische Anwendungen Typical Applications Hochleistungsumrichter High Power Converters Motorantriebe Motor Drives USV-Systeme UPS Systems Elektrische Eigenschaften Electrical Features Erweiterte Sperrschichttemperatur T vj op Extended Operation Temperature Tvj op Niedrige Schaltverluste Low Switching Losses Niedriges V Low V CEsat CEsat V CEsat mit positivem Temperaturkoeffizienten VCEsat with positive Temperature Coefficient Mechanische Eigenschaften Mechanical Features Isolierte Bodenplatte Isolated Base Plate Standardgehuse Standard Housing Module Label Code Barcode Code 128 Content of the Code Digit Module Serial Number 1 - 5 Module Material Number 6 - 11 Production Order Number 12 - 19 DMX - Code Datecode (Production Year) 20 - 21 Datecode (Production Week) 22 - 23 prepared by: MK date of publication: 2013-11-11 approved by: MK revision: 2.2 UL approved (E83335) 1Technische Information / Technical Information IGBT-Module FS100R12PT4 IGBT-modules Vorlufige Daten Preliminary Data IGBT,Wechselrichter / IGBT,Inverter Hchstzulssige Werte / Maximum Rated Values Kollektor-Emitter-Sperrspannung T = 25C V 1200 V vj CES Collector-emitter voltage Kollektor-Dauergleichstrom T = 90C, T = 175C I 100 A C vj max C nom Continuous DC collector current TC = 25C, Tvj max = 175C IC 135 A Periodischer Kollektor-Spitzenstrom t = 1 ms I 200 A P CRM Repetitive peak collector current Gesamt-Verlustleistung T = 25C, T = 175C P 500 W C vj max tot Total power dissipation Gate-Emitter-Spitzenspannung VGES +/-20 V Gate-emitter peak voltage Charakteristische Werte / Characteristic Values min. typ. max. Kollektor-Emitter-Sttigungsspannung I = 100 A, V = 15 V T = 25C 1,75 2,15 V C GE vj Collector-emitter saturation voltage I = 100 A, V = 15 V T = 125C V 2,05 V C GE vj CE sat I = 100 A, V = 15 V T = 150C 2,10 V C GE vj Gate-Schwellenspannung I = 3,80 mA, V = V , T = 25C V 5,2 5,8 6,4 V C CE GE vj GEth Gate threshold voltage Gateladung VGE = -15 V ... +15 V QG 0,80 C Gate charge Interner Gatewiderstand T = 25C R 7,5 vj Gint Internal gate resistor Eingangskapazitt f = 1 MHz, Tvj = 25C, VCE = 25 V, VGE = 0 V Cies 6,30 nF Input capacitance Rckwirkungskapazitt f = 1 MHz, T = 25C, V = 25 V, V = 0 V C 0,27 nF vj CE GE res Reverse transfer capacitance Kollektor-Emitter-Reststrom VCE = 1200 V, VGE = 0 V, Tvj = 25C ICES 1,0 mA Collector-emitter cut-off current Gate-Emitter-Reststrom V = 0 V, V = 20 V, T = 25C I 100 nA CE GE vj GES Gate-emitter leakage current Einschaltverzgerungszeit, induktive Last I = 100 A, V = 600 V T = 25C 0,14 s C CE vj t d on Turn-on delay time, inductive load VGE = 15 V Tvj = 125C 0,15 s R = 1,6 T = 150C 0,15 s Gon vj Anstiegszeit, induktive Last I = 100 A, V = 600 V T = 25C 0,03 s C CE vj t r Rise time, inductive load VGE = 15 V Tvj = 125C 0,035 s R = 1,6 T = 150C 0,04 s Gon vj Abschaltverzgerungszeit, induktive Last I = 100 A, V = 600 V T = 25C 0,32 s C CE vj t d off Turn-off delay time, inductive load VGE = 15 V Tvj = 125C 0,40 s R = 1,6 T = 150C 0,42 s Goff vj Fallzeit, induktive Last I = 100 A, V = 600 V T = 25C 0,09 s C CE vj t f Fall time, inductive load VGE = 15 V Tvj = 125C 0,16 s R = 1,6 T = 150C 0,18 s Goff vj Einschaltverlustenergie pro Puls I = 100 A, V = 600 V, L = 30 nH T = 25C 5,20 mJ C CE S vj Turn-on energy loss per pulse VGE = 15 V, di/dt = 3400 A/s (Tvj = 150C) Tvj = 125C Eon 9,30 mJ R = 1,6 T = 150C 10,5 mJ Gon vj Abschaltverlustenergie pro Puls I = 100 A, V = 600 V, L = 30 nH T = 25C 5,50 mJ C CE S vj Turn-off energy loss per pulse VGE = 15 V, du/dt = 5000 V/s (Tvj = 150C)Tvj = 125C Eoff 8,30 mJ R = 1,6 T = 150C 9,30 mJ Goff vj Kurzschluverhalten V 15 V, V = 800 V GE CC ISC SC data VCEmax = VCES -LsCE di/dt tP 10 s, Tvj = 150C 360 A Wrmewiderstand, Chip bis Gehuse pro IGBT / per IGBT R 0,30 K/W thJC Thermal resistance, junction to case Wrmewiderstand, Gehuse bis Khlkrper pro IGBT / per IGBT R 0,083 K/W thCH Thermal resistance, case to heatsink Paste = 1 W/(mK) / grease = 1 W/(mK) Temperatur im Schaltbetrieb T -40 150 C vj op Temperature under switching conditions prepared by: MK date of publication: 2013-11-11 approved by: MK revision: 2.2 2