/ Technical Information IGBT- FS100R12PT4 IGBT-modules EconoPACK4 /IGBT pressfitNTC EconoPACK4 module with fast Trench/Fieldstop IGBT4 and Emitter Controlled 4 diode and PressFIT / NTC / Preliminary Data V = 1200V CES I = 100A / I = 200A C nom CRM Typical Applications High Power Converters Motor Drives UPS UPS Systems Electrical Features T vj op Extended Operation Temperature Tvj op Low Switching Losses V Low V CEsat CEsat V CEsat VCEsat with positive Temperature Coefficient Mechanical Features Isolated Base Plate Standard Housing Module Label Code Barcode Code 128 Content of the Code Digit Module Serial Number 1 - 5 Module Material Number 6 - 11 Production Order Number 12 - 19 DMX - Code Datecode (Production Year) 20 - 21 Datecode (Production Week) 22 - 23 prepared by: MK date of publication: 2013-11-11 approved by: MK revision: 2.2 UL approved (E83335) 1 / Technical Information IGBT- FS100R12PT4 IGBT-modules Preliminary Data IGBT, / IGBT,Inverter / Maximum Rated Values T = 25C V 1200 V vj CES Collector-emitter voltage T = 90C, T = 175C I 100 A C vj max C nom Continuous DC collector current TC = 25C, Tvj max = 175C IC 135 A t = 1 ms I 200 A P CRM Repetitive peak collector current T = 25C, T = 175C P 500 W C vj max tot Total power dissipation VGES +/-20 V Gate-emitter peak voltage / Characteristic Values min. typ. max. I = 100 A, V = 15 V T = 25C 1,75 2,15 V C GE vj Collector-emitter saturation voltage I = 100 A, V = 15 V T = 125C V 2,05 V C GE vj CE sat I = 100 A, V = 15 V T = 150C 2,10 V C GE vj I = 3,80 mA, V = V , T = 25C V 5,2 5,8 6,4 V C CE GE vj GEth Gate threshold voltage VGE = -15 V ... +15 V QG 0,80 C Gate charge T = 25C R 7,5 vj Gint Internal gate resistor f = 1 MHz, Tvj = 25C, VCE = 25 V, VGE = 0 V Cies 6,30 nF Input capacitance f = 1 MHz, T = 25C, V = 25 V, V = 0 V C 0,27 nF vj CE GE res Reverse transfer capacitance - VCE = 1200 V, VGE = 0 V, Tvj = 25C ICES 1,0 mA Collector-emitter cut-off current - V = 0 V, V = 20 V, T = 25C I 100 nA CE GE vj GES Gate-emitter leakage current () I = 100 A, V = 600 V T = 25C 0,14 s C CE vj t d on Turn-on delay time, inductive load VGE = 15 V Tvj = 125C 0,15 s R = 1,6 T = 150C 0,15 s Gon vj () I = 100 A, V = 600 V T = 25C 0,03 s C CE vj t r Rise time, inductive load VGE = 15 V Tvj = 125C 0,035 s R = 1,6 T = 150C 0,04 s Gon vj () I = 100 A, V = 600 V T = 25C 0,32 s C CE vj t d off Turn-off delay time, inductive load VGE = 15 V Tvj = 125C 0,40 s R = 1,6 T = 150C 0,42 s Goff vj () I = 100 A, V = 600 V T = 25C 0,09 s C CE vj t f Fall time, inductive load VGE = 15 V Tvj = 125C 0,16 s R = 1,6 T = 150C 0,18 s Goff vj () I = 100 A, V = 600 V, L = 30 nH T = 25C 5,20 mJ C CE S vj Turn-on energy loss per pulse VGE = 15 V, di/dt = 3400 A/s (Tvj = 150C) Tvj = 125C Eon 9,30 mJ R = 1,6 T = 150C 10,5 mJ Gon vj ( I = 100 A, V = 600 V, L = 30 nH T = 25C 5,50 mJ C CE S vj Turn-off energy loss per pulse VGE = 15 V, du/dt = 5000 V/s (Tvj = 150C)Tvj = 125C Eoff 8,30 mJ R = 1,6 T = 150C 9,30 mJ Goff vj V 15 V, V = 800 V GE CC ISC SC data VCEmax = VCES -LsCE di/dt tP 10 s, Tvj = 150C 360 A IGBT / per IGBT R 0,30 K/W thJC Thermal resistance, junction to case IGBT / per IGBT R 0,083 K/W thCH Thermal resistance, case to heatsink Paste = 1 W/(mK) / grease = 1 W/(mK) T -40 150 C vj op Temperature under switching conditions prepared by: MK date of publication: 2013-11-11 approved by: MK revision: 2.2 2