/ Technical Information IGBT- FS100R17N3E4 IGBT-modules EconoPACK3 /IGBT4 NTC EconoPACK3 module with trench/fieldstop IGBT4 and Emitter Controlled Diode and NTC / Preliminary Data VCES = 1700V I = 100A / I = 200A C nom CRM Typical Applications Motor Drives UPS UPS Systems Electrical Features T Extended Operation Temperature T vj op vj op V Low V CEsat CEsat V CEsat VCEsat with positive Temperature Coefficient Mechanical Features NTC Integrated NTC temperature sensor Isolated Base Plate Solder Contact Technology Standard Housing Module Label Code Barcode Code 128 Content of the Code Digit Module Serial Number 1 - 5 Module Material Number 6 - 11 Production Order Number 12 - 19 DMX - Code Datecode (Production Year) 20 - 21 Datecode (Production Week) 22 - 23 prepared by: AS date of publication: 2013-11-11 approved by: RS revision: 2.0 UL approved (E83335) 1 / Technical Information IGBT- FS100R17N3E4 IGBT-modules Preliminary Data IGBT, / IGBT,Inverter / Maximum Rated Values T = 25C V 1700 V vj CES Collector-emitter voltage T = 100C, T = 175C I 100 A C vj max C nom Continuous DC collector current t = 1 ms I 200 A P CRM Repetitive peak collector current T = 25C, T = 175C P 600 W C vj max tot Total power dissipation VGES +/-20 V Gate-emitter peak voltage / Characteristic Values min. typ. max. I = 100 A, V = 15 V T = 25C 1,95 2,30 V C GE vj Collector-emitter saturation voltage I = 100 A, V = 15 V T = 125C V 2,35 V C GE vj CE sat I = 100 A, V = 15 V T = 150C 2,45 V C GE vj I = 4,00 mA, V = V , T = 25C V 5,2 5,8 6,4 V C CE GE vj GEth Gate threshold voltage VGE = -15 V ... +15 V QG 1,20 C Gate charge T = 25C R 7,5 vj Gint Internal gate resistor f = 1 MHz, Tvj = 25C, VCE = 25 V, VGE = 0 V Cies 9,00 nF Input capacitance f = 1 MHz, T = 25C, V = 25 V, V = 0 V C 0,29 nF vj CE GE res Reverse transfer capacitance - VCE = 1700 V, VGE = 0 V, Tvj = 25C ICES 1,0 mA Collector-emitter cut-off current - V = 0 V, V = 20 V, T = 25C I 400 nA CE GE vj GES Gate-emitter leakage current () I = 100 A, V = 900 V T = 25C 0,20 s C CE vj t d on Turn-on delay time, inductive load VGE = 15 V Tvj = 125C 0,22 s R = 0,91 T = 150C 0,23 s Gon vj () I = 100 A, V = 900 V T = 25C 0,03 s C CE vj t r Rise time, inductive load VGE = 15 V Tvj = 125C 0,04 s R = 0,91 T = 150C 0,05 s Gon vj () I = 100 A, V = 900 V T = 25C 0,51 s C CE vj t d off Turn-off delay time, inductive load VGE = 15 V Tvj = 125C 0,61 s R = 0,91 T = 150C 0,64 s Goff vj () I = 100 A, V = 900 V T = 25C 0,29 s C CE vj t f Fall time, inductive load VGE = 15 V Tvj = 125C 0,52 s R = 0,91 T = 150C 0,60 s Goff vj () I = 100 A, V = 900 V, L = 50 nH T = 25C 12,0 mJ C CE S vj Turn-on energy loss per pulse VGE = 15 V, di/dt = 3800 A/s (Tvj = 150C) Tvj = 125C Eon 19,0 mJ R = 0,91 T = 150C 21,0 mJ Gon vj ( I = 100 A, V = 900 V, L = 50 nH T = 25C 18,0 mJ C CE S vj Turn-off energy loss per pulse VGE = 15 V, du/dt = 3600 V/s (Tvj = 150C)Tvj = 125C Eoff 29,0 mJ R = 0,91 T = 150C 33,0 mJ Goff vj V 15 V, V = 1000 V GE CC ISC SC data VCEmax = VCES -LsCE di/dt tP 10 s, Tvj = 150C 450 A IGBT / per IGBT R 0,25 K/W thJC Thermal resistance, junction to case IGBT / per IGBT R 0,068 K/W thCH Thermal resistance, case to heatsink Paste = 1 W/(mK) / grease = 1 W/(mK) T -40 150 C vj op Temperature under switching conditions prepared by: AS date of publication: 2013-11-11 approved by: RS revision: 2.0 2