FS100R17PE4 EconoPACK4 /IGBT4 pressfitNTC EconoPACK4 module with Trench/Fieldstop IGBT4 and Emitter Controlled 4 diode and PressFIT / NTC VCES = 1700V I = 100A / I = 200A C nom CRM Potential Applications UPS UPS systems High power converters Motor drives Wind turbines Electrical Features V V with positive temperature coefficient CEsat CEsat V Low V CEsat CEsat T vj op Extended operating temperature Tvj op Mechanical Features Standard housing Isolated base plate Module Label Code Barcode Code 128 Content of the Code Digit Module Serial Number 1 - 5 Module Material Number 6 - 11 Production Order Number 12 - 19 DMX - Code Datecode (Production Year) 20 - 21 Datecode (Production Week) 22 - 23 Datasheet Please read the Important Notice and Warnings at the end of this document V 3.0 www.infineon.com 2018-04-13FS100R17PE4 IGBT, / IGBT,Inverter / Maximum Rated Values T = 25C V 1700 V vj CES Collector-emitter voltage TC = 100C, Tvj max = 175C IC nom 100 A Continuous DC collector current t = 1 ms I 200 A P CRM Repetitive peak collector current VGES +/-20 V Gate-emitter peak voltage / Characteristic Values min. typ. max. IC = 100 A, VGE = 15 V Tvj = 25C 1,95 2,30 V Collector-emitter saturation voltage I = 100 A, V = 15 V T = 125C V 2,35 V C GE vj CE sat IC = 100 A, VGE = 15 V Tvj = 150C 2,45 V IC = 4,00 mA, VCE = VGE, Tvj = 25C VGEth 5,20 5,80 6,40 V Gate threshold voltage V = -15 / 15 V Q 1,20 C GE G Gate charge Tvj = 25C RGint 7,5 Internal gate resistor f = 1000 kHz, T = 25C, V = 25 V, V = 0 V C 9,00 nF vj CE GE ies Input capacitance f = 1000 kHz, Tvj = 25C, VCE = 25 V, VGE = 0 V Cres 0,29 nF Reverse transfer capacitance - V = 1700 V, V = 0 V, T = 25C I 1,0 mA CE GE vj CES Collector-emitter cut-off current - VCE = 0 V, VGE = 20 V, Tvj = 25C IGES 400 nA Gate-emitter leakage current () IC = 100 A, VCE = 900 V Tvj = 25C 0,20 s t d on Turn-on delay time, inductive load V = -15 / 15 V T = 125C 0,22 s GE vj R = 0,91 T = 150C 0,23 s Gon vj () IC = 100 A, VCE = 900 V Tvj = 25C 0,03 s t r Rise time, inductive load V = -15 / 15 V T = 125C 0,04 s GE vj R = 0,91 T = 150C 0,05 s Gon vj () I = 100 A, V = 900 V T = 25C 0,51 s C CE vj t d off Turn-off delay time, inductive load V = -15 / 15 V T = 125C 0,61 s GE vj R = 0,91 T = 150C 0,64 s Goff vj () I = 100 A, V = 900 V T = 25C 0,29 s C CE vj t f Fall time, inductive load V = -15 / 15 V T = 125C 0,52 s GE vj R = 0,91 T = 150C 0,60 s Goff vj () I = 100 A, V = 900 V, L = 50 nH T = 25C 12,0 mJ C CE vj Turn-on energy loss per pulse di/dt = 3800 A/s (T = 150C) T = 125C E 19,0 mJ vj vj on V = -15 / 15 V, R = 0,91 T = 150C 21,0 mJ GE Gon vj ( I = 100 A, V = 900 V, L = 50 nH T = 25C 18,0 mJ C CE vj Turn-off energy loss per pulse du/dt = 3600 V/s (T = 150C) T = 125C E 29,0 mJ vj vj off V = -15 / 15 V, R = 0,91 T = 150C 33,0 mJ GE Goff vj V 15 V, V = 1000 V GE CC I SC SC data V = V -L di/dt t 10 s, T = 150C 450 A CEmax CES sCE P vj IGBT / per IGBT RthJC 0,250 K/W Thermal resistance, junction to case IGBT / per IGBT R 0,0840 K/W thCH Thermal resistance, case to heatsink = 1 W/(mK) / = 1 W/(mK) Paste grease Tvj op -40 150 C Temperature under switching conditions Datasheet 2 V 3.0 2018-04-13