Technische Information / Technical Information IGBT-Module FS10R06VE3 IGBT-modules Vorlufige Daten IGBT,Wechselrichter / IGBT,Inverter Preliminary Data Hchstzulssige Werte / Maximum Rated Values Kollektor-Emitter-Sperrspannung T = 25C V 600 V vj CES Collector-emitter voltage Kollektor-Dauergleichstrom T = 80C, T = 175C I 10 A C vj max C nom Continuous DC collector current TC = 25C, Tvj max = 175C IC 16 A Periodischer Kollektor-Spitzenstrom t = 1 ms I 20 A P CRM Repetitive peak collector current Gesamt-Verlustleistung T = 25C, T = 175 P 50,0 W C vj max tot Total power dissipation Gate-Emitter-Spitzenspannung VGES +/-20 V Gate-emitter peak voltage Charakteristische Werte / Characteristic Values min. typ. max. Kollektor-Emitter-Sttigungsspannung I = 10 A, V = 15 V T = 25C 1,55 2,00 V C GE vj Collector-emitter saturation voltage I = 10 A, V = 15 V T = 125C V 1,70 V C GE vj CE sat I = 10 A, V = 15 V T = 150C 1,80 V C GE vj Gate-Schwellenspannung I = 0,30 mA, V = V , T = 25C V 4,9 5,8 6,5 V C CE GE vj GEth Gate threshold voltage Gateladung VGE = -15 V ... +15 V QG 0,10 C Gate charge Interner Gatewiderstand T = 25C R 0,0 vj Gint Internal gate resistor Eingangskapazitt f = 1 MHz, Tvj = 25C, VCE = 25 V, VGE = 0 V Cies 0,55 nF Input capacitance Rckwirkungskapazitt f = 1 MHz, T = 25C, V = 25 V, V = 0 V C 0,017 nF vj CE GE res Reverse transfer capacitance Kollektor-Emitter-Reststrom VCE = 600 V, VGE = 0 V, Tvj = 25C ICES 1,0 mA Collector-emitter cut-off current Gate-Emitter-Reststrom V = 0 V, V = 20 V, T = 25C I 400 nA CE GE vj GES Gate-emitter leakage current Einschaltverzgerungszeit, induktive Last I = 10 A, V = 300 V T = 25C 0,012 s C CE vj t d on Turn-on delay time, inductive load VGE = 15 V Tvj = 125C 0,012 s R = 27 T = 150C 0,012 s Gon vj Anstiegszeit, induktive Last I = 10 A, V = 300 V T = 25C 0,009 s C CE vj t r Rise time, inductive load VGE = 15 V Tvj = 125C 0,013 s R = 27 T = 150C 0,014 s Gon vj Abschaltverzgerungszeit, induktive Last I = 10 A, V = 300 V T = 25C 0,10 s C CE vj t d off Turn-off delay time, inductive load VGE = 15 V Tvj = 125C 0,12 s R = 27 T = 150C 0,125 s Goff vj Fallzeit, induktive Last I = 10 A, V = 300 V T = 25C 0,085 s C CE vj t f Fall time, inductive load VGE = 15 V Tvj = 125C 0,13 s R = 27 T = 150C 0,135 s Goff vj Einschaltverlustenergie pro Puls I = 10 A, V = 300 V, L = 60 nH T = 25C 0,14 mJ C CE S vj Turn-on energy loss per pulse VGE = 15 V Tvj = 125C Eon 0,20 mJ R = 27 T = 150C 0,22 mJ Gon vj Abschaltverlustenergie pro Puls I = 10 A, V = 300 V, L = 60 nH T = 25C 0,24 mJ C CE S vj Turn-off energy loss per pulse VGE = 15 V Tvj = 125C Eoff 0,30 mJ R = 27 T = 150C 0,32 mJ Goff vj Kurzschluverhalten V 15 V, V = 360 V GE CC ISC SC data VCEmax = VCES -LsCE di/dt tP 6 s, Tvj = 150C 50 A Wrmewiderstand, Chip bis Gehuse pro IGBT / per IGBT R 2,70 3,00 K/W thJC Thermal resistance, junction to case Wrmewiderstand, Gehuse bis Khlkrper pro IGBT / per IGBT R 1,00 K/W thCH Thermal resistance, case to heatsink Paste = 1 W/(mK) / grease = 1 W/(mK) Temperatur im Schaltbetrieb T -40 150 C vj op Temperature under switching conditions prepared by: DPK date of publication: 2013-10-03 approved by: RK revision: 2.1 1Technische Information / Technical Information IGBT-Module FS10R06VE3 IGBT-modules Vorlufige Daten Preliminary Data Diode, Wechselrichter / Diode, Inverter Hchstzulssige Werte / Maximum Rated Values Periodische Spitzensperrspannung T = 25C V 600 V vj RRM Repetitive peak reverse voltage Dauergleichstrom I 10 A F Continuous DC forward current Periodischer Spitzenstrom t = 1 ms I 20 A P FRM Repetitive peak forward current Grenzlastintegral V = 0 V, t = 10 ms, T = 125C 12,5 As R P vj It It - value VR = 0 V, tP = 10 ms, Tvj = 150C 9,50 As Charakteristische Werte / Characteristic Values min. typ. max. Durchlassspannung I = 10 A, V = 0 V T = 25C 1,60 2,05 V F GE vj Forward voltage I = 10 A, V = 0 V T = 125C V 1,55 V F GE vj F IF = 10 A, VGE = 0 V Tvj = 150C 1,50 V Rckstromspitze I = 10 A, - di /dt = 1500 A/s (T =150C) T = 25C 18,0 A F F vj vj Peak reverse recovery current V = 300 V T = 125C I 19,0 A R vj RM VGE = -15 V Tvj = 150C 21,0 A Sperrverzgerungsladung I = 10 A, - di /dt = 1500 A/s (T =150C) T = 25C 0,50 C F F vj vj Recovered charge V = 300 V T = 125C Q 0,85 C R vj r VGE = -15 V Tvj = 150C 1,10 C Abschaltenergie pro Puls I = 10 A, - di /dt = 1500 A/s (T =150C) T = 25C 0,11 mJ F F vj vj Reverse recovery energy V = 300 V T = 125C E 0,20 mJ R vj rec VGE = -15 V Tvj = 150C 0,26 mJ Wrmewiderstand, Chip bis Gehuse pro Diode / per diode RthJC 3,70 4,10 K/W Thermal resistance, junction to case Wrmewiderstand, Gehuse bis Khlkrper pro Diode / per diode R 1,90 K/W thCH Thermal resistance, case to heatsink = 1 W/(mK) / = 1 W/(mK) Paste grease Temperatur im Schaltbetrieb Tvj op -40 150 C Temperature under switching conditions Modul / Module Isolations-Prfspannung RMS, f = 50 Hz, t = 1 min. VISOL 2,5 kV Isolation test voltage Innere Isolation Basisisolierung (Schutzklasse 1, EN61140) Al O 2 3 Internal isolation basic insulation (class 1, IEC 61140) Kriechstrecke Kontakt - Khlkrper / terminal to heatsink 5,0 mm Creepage distance Kontakt - Kontakt / terminal to terminal 5,0 Luftstrecke Kontakt - Khlkrper / terminal to heatsink 3,2 mm Clearance Kontakt - Kontakt / terminal to terminal 3,2 Vergleichszahl der Kriechwegbildung CTI > 225 Comperative tracking index min. typ. max. Modulstreuinduktivitt LsCE 25 nH Stray inductance module Modulleitungswiderstand, Anschlsse - Chip T = 25C, pro Schalter / per switch R 9,50 m C CC +EE Module lead resistance, terminals - chip Lagertemperatur T -40 125 C stg Storage temperature Anpresskraft fr mech. Bef. pro Feder F 30 - 50 N mountig force per clamp Gewicht G 10 g Weight prepared by: DPK date of publication: 2013-10-03 approved by: RK revision: 2.1 2