Technische Information / Technical Information IGBT-Module FS10R12VT3 IGBT-modules Vorlufige Daten IGBT,Wechselrichter / IGBT,Inverter Preliminary Data Hchstzulssige Werte / Maximum Rated Values Kollektor-Emitter-Sperrspannung T = 25C V 1200 V vj CES Collector-emitter voltage Kollektor-Dauergleichstrom T = 80C, T = 150C I 10 A C vj max C nom Continuous DC collector current TC = 25C, Tvj max = 150C IC 16 A Periodischer Kollektor-Spitzenstrom t = 1 ms I 20 A P CRM Repetitive peak collector current Gesamt-Verlustleistung T = 25C, T = 150 P 64,0 W C vj max tot Total power dissipation Gate-Emitter-Spitzenspannung VGES +/-20 V Gate-emitter peak voltage Charakteristische Werte / Characteristic Values min. typ. max. Kollektor-Emitter-Sttigungsspannung I = 10 A, V = 15 V T = 25C 1,90 2,45 V C GE vj V CE sat Collector-emitter saturation voltage I = 10 A, V = 15 V T = 125C 2,15 V C GE vj Gate-Schwellenspannung IC = 0,30 mA, VCE = VGE, Tvj = 25C VGEth 5,0 5,8 6,5 V Gate threshold voltage Gateladung V = -15 V ... +15 V Q 0,10 C GE G Gate charge Interner Gatewiderstand Tvj = 25C RGint 0,0 Internal gate resistor Eingangskapazitt f = 1 MHz, T = 25C, V = 25 V, V = 0 V C 0,70 nF vj CE GE ies Input capacitance Rckwirkungskapazitt f = 1 MHz, Tvj = 25C, VCE = 25 V, VGE = 0 V Cres 0,026 nF Reverse transfer capacitance Kollektor-Emitter-Reststrom V = 1200 V, V = 0 V, T = 25C I 1,0 mA CE GE vj CES Collector-emitter cut-off current Gate-Emitter-Reststrom V = 0 V, V = 20 V, T = 25C I 100 nA CE GE vj GES Gate-emitter leakage current Einschaltverzgerungszeit, induktive Last IC = 10 A, VCE = 600 V Tvj = 25C 0,037 s t d on Turn-on delay time, inductive load V = 15 V T = 125C 0,037 s GE vj RGon = 82 Anstiegszeit, induktive Last IC = 10 A, VCE = 600 V Tvj = 25C 0,02 s t r Rise time, inductive load V = 15 V T = 125C 0,025 s GE vj RGon = 82 Abschaltverzgerungszeit, induktive Last IC = 10 A, VCE = 600 V Tvj = 25C 0,29 s t d off Turn-off delay time, inductive load V = 15 V T = 125C 0,39 s GE vj RGoff = 82 Fallzeit, induktive Last IC = 10 A, VCE = 600 V Tvj = 25C 0,09 s t f Fall time, inductive load V = 15 V T = 125C 0,15 s GE vj RGoff = 82 Einschaltverlustenergie pro Puls IC = 10 A, VCE = 600 V, LS = 60 nH Tvj = 25C 0,95 mJ Turn-on energy loss per pulse V = 15 V T = 125C E 1,25 mJ GE vj on RGon = 82 Abschaltverlustenergie pro Puls IC = 10 A, VCE = 600 V, LS = 60 nH Tvj = 25C 0,70 mJ Turn-off energy loss per pulse V = 15 V T = 125C E 1,10 mJ GE vj off RGoff = 82 Kurzschluverhalten VGE 15 V, VCC = 900 V I SC SC data V = V -L di/dt t 10 s, T = 125C 35 A CEmax CES sCE P vj Wrmewiderstand, Chip bis Gehuse pro IGBT / per IGBT R 1,75 1,95 K/W thJC Thermal resistance, junction to case Wrmewiderstand, Gehuse bis Khlkrper pro IGBT / per IGBT R 0,65 K/W thCH Thermal resistance, case to heatsink = 1 W/(mK) / = 1 W/(mK) Paste grease Temperatur im Schaltbetrieb T -40 125 C vj op Temperature under switching conditions prepared by: MB date of publication: 2013-10-03 approved by: IG revision: 2.0 1Technische Information / Technical Information IGBT-Module FS10R12VT3 IGBT-modules Vorlufige Daten Preliminary Data Diode, Wechselrichter / Diode, Inverter Hchstzulssige Werte / Maximum Rated Values Periodische Spitzensperrspannung T = 25C V 1200 V vj RRM Repetitive peak reverse voltage Dauergleichstrom I 10 A F Continuous DC forward current Periodischer Spitzenstrom t = 1 ms I 20 A P FRM Repetitive peak forward current Grenzlastintegral V = 0 V, t = 10 ms, T = 125C It 33,0 As R P vj It - value Charakteristische Werte / Characteristic Values min. typ. max. Durchlassspannung I = 10 A, V = 0 V T = 25C 1,65 2,10 V F GE vj VF Forward voltage I = 10 A, V = 0 V T = 125C 1,65 V F GE vj Rckstromspitze I = 10 A, - di /dt = 650 A/s (T =125C) T = 25C 16,0 A F F vj vj Peak reverse recovery current V = 600 V T = 125C I 16,5 A R vj RM V = -15 V GE Sperrverzgerungsladung I = 10 A, - di /dt = 650 A/s (T =125C) T = 25C 1,20 C F F vj vj Recovered charge V = 600 V T = 125C Q 2,00 C R vj r V = -15 V GE Abschaltenergie pro Puls I = 10 A, - di /dt = 650 A/s (T =125C) T = 25C 0,38 mJ F F vj vj Reverse recovery energy V = 600 V T = 125C E 0,68 mJ R vj rec V = -15 V GE Wrmewiderstand, Chip bis Gehuse pro Diode / per diode R 2,25 2,50 K/W thJC Thermal resistance, junction to case Wrmewiderstand, Gehuse bis Khlkrper pro Diode / per diode RthCH 0,70 K/W Thermal resistance, case to heatsink = 1 W/(mK) / = 1 W/(mK) Paste grease Temperatur im Schaltbetrieb T -40 125 C vj op Temperature under switching conditions Modul / Module Isolations-Prfspannung RMS, f = 50 Hz, t = 1 min V 2,5 kV ISOL Isolation test voltage Innere Isolation Basisisolierung (Schutzklasse 1, EN61140) Al2O3 Internal isolation basic insulation (class 1, IEC 61140) Kriechstrecke Kontakt - Khlkrper / terminal to heatsink 5,0 mm Creepage distance Kontakt - Kontakt / terminal to terminal 10,0 Luftstrecke Kontakt - Khlkrper / terminal to heatsink 3,2 mm Clearance Kontakt - Kontakt / terminal to terminal 7,0 Vergleichszahl der Kriechwegbildung CTI > 225 Comperative tracking index min. typ. max. Modulstreuinduktivitt L 20 nH sCE Stray inductance module Modulleitungswiderstand, Anschlsse - RCC +EE 9,00 Chip TC = 25C, pro Schalter / per switch m R 9,00 AA +CC Module lead resistance, terminals - chip Lagertemperatur Tstg -40 125 C Storage temperature Anpresskraft fr mech. Bef. pro Feder F 30 - 50 N mountig force per clamp Gewicht G 10 g Weight With additional insulation of the mounting clamp higher values of creepage and clearance distances to the heatsink can be achieved. For more information call your responsible sales representative. prepared by: MB date of publication: 2013-10-03 approved by: IG revision: 2.0 2