FS150R17PE4 EconoPACK4 Modul mit Trench/Feldstopp IGBT4 und Emitter Controlled 4 Diode und PressFIT / NTC EconoPACK4 module with Trench/Fieldstop IGBT4 and Emitter Controlled 4 diode and PressFIT / NTC V = 1700V CES I = 150A / I = 300A C nom CRM Potentielle Anwendungen Potential Applications Hochleistungsumrichter High power converters Motorantriebe Motor drives USV-Systeme UPS systems Windgeneratoren Wind turbines Elektrische Eigenschaften Electrical Features Erweiterte Sperrschichttemperatur T Extended operating temperature T vj op vj op Niedriges V Low V CEsat CEsat V mit positivem Temperaturkoeffizienten V with positive temperature coefficient CEsat CEsat Mechanische Eigenschaften Mechanical Features Hohe Leistungsdichte High power density Isolierte Bodenplatte Isolated base plate Standardgehuse Standard housing Module Label Code Barcode Code 128 Content of the Code Digit Module Serial Number 1 - 5 Module Material Number 6 - 11 Production Order Number 12 - 19 DMX - Code Datecode (Production Year) 20 - 21 Datecode (Production Week) 22 - 23 Datasheet Please read the Important Notice and Warnings at the end of this document V 3.0 www.infineon.com 2018-04-13FS150R17PE4 IGBT,Wechselrichter / IGBT,Inverter Hchstzulssige Werte / Maximum Rated Values Kollektor-Emitter-Sperrspannung T = 25C V 1700 V vj CES Collector-emitter voltage Kollektor-Dauergleichstrom TC = 100C, Tvj max = 175C IC nom 150 A Continuous DC collector current Periodischer Kollektor-Spitzenstrom t = 1 ms I 300 A P CRM Repetitive peak collector current Gate-Emitter-Spitzenspannung VGES +/-20 V Gate-emitter peak voltage Charakteristische Werte / Characteristic Values min. typ. max. Kollektor-Emitter-Sttigungsspannung IC = 150 A, VGE = 15 V Tvj = 25C 1,95 2,30 V Collector-emitter saturation voltage I = 150 A, V = 15 V T = 125C V 2,35 V C GE vj CE sat IC = 150 A, VGE = 15 V Tvj = 150C 2,45 V Gate-Schwellenspannung IC = 6,00 mA, VCE = VGE, Tvj = 25C VGEth 5,20 5,80 6,40 V Gate threshold voltage Gateladung V = -15 / 15 V Q 1,70 C GE G Gate charge Interner Gatewiderstand Tvj = 25C RGint 5,0 Internal gate resistor Eingangskapazitt f = 1000 kHz, T = 25C, V = 25 V, V = 0 V C 13,5 nF vj CE GE ies Input capacitance Rckwirkungskapazitt f = 1000 kHz, Tvj = 25C, VCE = 25 V, VGE = 0 V Cres 0,44 nF Reverse transfer capacitance Kollektor-Emitter-Reststrom V = 1700 V, V = 0 V, T = 25C I 1,0 mA CE GE vj CES Collector-emitter cut-off current Gate-Emitter-Reststrom VCE = 0 V, VGE = 20 V, Tvj = 25C IGES 100 nA Gate-emitter leakage current Einschaltverzgerungszeit, induktive Last IC = 150 A, VCE = 900 V Tvj = 25C 0,20 s t d on Turn-on delay time, inductive load V = -15 / 15 V T = 125C 0,22 s GE vj R = 0,62 T = 150C 0,23 s Gon vj Anstiegszeit, induktive Last IC = 150 A, VCE = 900 V Tvj = 25C 0,03 s t r Rise time, inductive load V = -15 / 15 V T = 125C 0,04 s GE vj R = 0,62 T = 150C 0,05 s Gon vj Abschaltverzgerungszeit, induktive Last I = 150 A, V = 900 V T = 25C 0,51 s C CE vj t d off Turn-off delay time, inductive load V = -15 / 15 V T = 125C 0,61 s GE vj R = 0,62 T = 150C 0,64 s Goff vj Fallzeit, induktive Last I = 150 A, V = 900 V T = 25C 0,29 s C CE vj t f Fall time, inductive load V = -15 / 15 V T = 125C 0,52 s GE vj R = 0,62 T = 150C 0,60 s Goff vj Einschaltverlustenergie pro Puls I = 150 A, V = 900 V, L = 50 nH T = 25C 18,0 mJ C CE vj Turn-on energy loss per pulse di/dt = 4900 A/s (T = 150C) T = 125C E 29,0 mJ vj vj on V = -15 / 15 V, R = 0,62 T = 150C 32,0 mJ GE Gon vj Abschaltverlustenergie pro Puls I = 150 A, V = 900 V, L = 50 nH T = 25C 26,5 mJ C CE vj Turn-off energy loss per pulse du/dt = 3600 V/s (T = 150C) T = 125C E 43,5 mJ vj vj off V = -15 / 15 V, R = 0,62 T = 150C 49,0 mJ GE Goff vj Kurzschluverhalten V 15 V, V = 1000 V GE CC I SC SC data V = V -L di/dt t 10 s, T = 150C 700 A CEmax CES sCE P vj Wrmewiderstand, Chip bis Gehuse pro IGBT / per IGBT RthJC 0,180 K/W Thermal resistance, junction to case Wrmewiderstand, Gehuse bis Khlkrper pro IGBT / per IGBT R 0,0830 K/W thCH Thermal resistance, case to heatsink = 1 W/(mK) / = 1 W/(mK) Paste grease Temperatur im Schaltbetrieb Tvj op -40 150 C Temperature under switching conditions Datasheet 2 V 3.0 2018-04-13