Technische Information / technical information IGBT-Module FS15R06XL4 IGBT-Modules vorlufige Daten preliminary data Hchstzulssige Werte / maximum rated values Elektrische Eigenschaften / electrical properties Kollektor Emitter Sperrspannung T = 25 C V 600 V vj CES collector emitter voltage I 15 C,nom. A Kollektor Dauergleichstrom T=75C C DC collector current A T = I 25 C 20 C C Periodischer Kollektor Spitzenstrom t = 1ms, T = 75 C I 30 A p C CRM repetitive peak collector current Gesamt Verlustleistung T = 25C, Transistor P 81 W c tot total power dissipation Gate Emitter Spitzenspannung V +20 V GES gate emitter peak voltage Dauergleichstrom I 15 A F DC forward current Periodischer Spitzenstrom t = 1ms I 30 A p FRM repetitive peak forward current Grenzlastintegral V = 0V, t = 10ms, T = 125C It 34 As R p vj It value Isolations Prfspannung RMS, f= 50Hz, t= 1min V 2,5 kV ISOL insulation test voltage Charakteristische Werte / characteristic values Transistor Wechselrichter / transistor inverter min. typ. max. V = 15V, T = 25C, I = I - 1,95 2,55 V GE vj C C,nom Kollektor Emitter Sttigungsspannung V CEsat collector emitter saturation voltage V = 15V, T = 125C, I = I - 2,20 - V GE vj C C,nom Gate Schwellenspannung V = V , T = 25C, I = 0,4 mA V 4,5 5,5 6,5 V CE GE vj C GE(th) gate threshold voltage Gateladung V = -15V...+15V Q 0,08 C GE G - - gate charge Eingangskapazitt f= 1MHz, T = 25C, V = 25V, V = 0V C 0,675 nF vj CE GE ies - - input capacitance Rckwirkungskapazitt f= 1MHz, T = 25C, V = 25V, V = 0V C - 0,06 - nF vj CE GE res reverse transfer capacitance Kollektor Emitter Reststrom V = V, V = 0V, T = 25C I 600 - -5 mA CE GE vj CES collector emitter cut off current Gate Emitter Reststrom V = 0V, V = 20V, T = 25C I - - 400 nA CE GE vj GES gate emitter leakage current prepared by: P. Kanschat date of publication: 2002-12-17 approved: M. Hierholzer revision: 2.0 1 (8)Technische Information / technical information IGBT-Module FS15R06XL4 IGBT-Modules vorlufige Daten preliminary data Charakteristische Werte / characteristic values Transistor Wechselrichter / transistor inverter min. typ. max. A, V = I = 15 300 V C CC Einschaltverzgerungszeit (induktive Last) V = 15V, R = , T = 25C t 18 - 20 - ns GE G vj d,on turn on delay time (inductive load) V = 15V, R = , T = 125C 18 - 21 - ns GE G vj I = A, V = 300 V 15 CC C Anstiegszeit (induktive Last) V = 15V, R = , T = 25C t GE G 18 r - 7 - ns vj rise time (inductive load) V = 15V, R = , T = 125C GE G 18 - 8 - ns vj I = A, V = 300 V 15 CC C Abschaltverzgerungszeit (induktive Last) V = 15V, R = , T = 25C t GE G 18 vj d,off - 80 - ns turn off delay time (inductive load) V = 15V, R = 18 , T = 125C - 110 - ns GE G vj A, V = I = 15 300 V C CC Fallzeit (induktive Last) V = 15V, R = t 18 , T = 25C - 18 - ns GE G vj f fall time (inductive load) V = 15V, R = 18 , T = 125C - 25 - ns GE G vj A, V = I = 15 300 V C CC Einschaltverlustenergie pro Puls E - 0,45 - mJ on turn on energy loss per pulse , T = 125C, L = R = 18 15 nH G vj I = A, V = 15 300 V C CC Ausschaltverlustenergie pro Puls E - 0,30 -mJ off turn off energy loss per pulse R = , T = 125C, L = 18 15 nH G vj t 10sec, V 15V, T = 125C, Kurzschlussverhalten P GE vj I - 68 - A SC SC data V = 360 V, V =V -L di/dt CC CEmax CES CE Modulinduktivitt L - 25 - nH CE stray inductance module Leitungswiderstand, Anschluss-Chip T = 25C R - 8 - m c CC/EE lead resistance, terminal-chip Charakteristische Werte / characteristic values Diode Wechselrichter / diode inverter I = A, V = 0V, T = 25C 15 GE vj - 1,4 2 V Durchlassspannung F V F forward voltage I = A, V = 0V, T = 125C 15 GE vj - 1,35 - V F I = A, -di /dt = 2000 15 F A/s F Rckstromspitze V = 300 V, V = -10V, T = 25C I GE vj RM -36- A R peak reverse recovery current V = 300 V, V = -10V, T = 125C GE vj -37- A R I = 15 A, -di /dt = 2000 A/s F F Sperrverzgerungsladung V, V = -10V, T = 25C Q V = 300 - 0,9 - C R GE vj r recovered charge V, V = -10V, T = 125C V = 300 - 1,4 - C R GE vj A, -di /dt = I = 15 2000 A/s F F Ausschaltenergie pro Puls V, V = -10V, T = 25C E V = 300 - 0,25 - mJ R GE vj rec reverse recovery energy V, V = -10V, T = 125C V = 300 - 0,35 - mJ R GE vj 2 (8)