/ Technical Information IGBT- FS15R12VT3 IGBT-modules IGBT, / IGBT,Inverter Preliminary Data / Maximum Rated Values T = 25C V 1200 V vj CES Collector-emitter voltage T = 80C, T = 150C I 15 A C vj max C nom Continuous DC collector current TC = 25C, Tvj max = 150C IC 24 A t = 1 ms I 30 A P CRM Repetitive peak collector current T = 25C, T = 150 P 86,0 W C vj max tot Total power dissipation VGES +/-20 V Gate-emitter peak voltage / Characteristic Values min. typ. max. I = 15 A, V = 15 V T = 25C 1,70 2,15 V C GE vj V CE sat Collector-emitter saturation voltage I = 15 A, V = 15 V T = 125C 1,90 V C GE vj IC = 0,60 mA, VCE = VGE, Tvj = 25C VGEth 5,0 5,8 6,5 V Gate threshold voltage V = -15 V ... +15 V Q 0,15 C GE G Gate charge Tvj = 25C RGint 0,0 Internal gate resistor f = 1 MHz, T = 25C, V = 25 V, V = 0 V C 1,10 nF vj CE GE ies Input capacitance f = 1 MHz, Tvj = 25C, VCE = 25 V, VGE = 0 V Cres 0,04 nF Reverse transfer capacitance - V = 1200 V, V = 0 V, T = 25C I 1,0 mA CE GE vj CES Collector-emitter cut-off current - V = 0 V, V = 20 V, T = 25C I 100 nA CE GE vj GES Gate-emitter leakage current () IC = 15 A, VCE = 600 V Tvj = 25C 0,047 s t d on Turn-on delay time, inductive load V = 15 V T = 125C 0,047 s GE vj RGon = 62 () IC = 15 A, VCE = 600 V Tvj = 25C 0,02 s t r Rise time, inductive load V = 15 V T = 125C 0,025 s GE vj RGon = 62 () IC = 15 A, VCE = 600 V Tvj = 25C 0,37 s t d off Turn-off delay time, inductive load V = 15 V T = 125C 0,47 s GE vj RGoff = 62 () IC = 15 A, VCE = 600 V Tvj = 25C 0,075 s t f Fall time, inductive load V = 15 V T = 125C 0,12 s GE vj RGoff = 62 () IC = 15 A, VCE = 600 V, LS = 60 nH Tvj = 25C 1,55 mJ Turn-on energy loss per pulse V = 15 V T = 125C E 1,95 mJ GE vj on RGon = 62 ( IC = 15 A, VCE = 600 V, LS = 60 nH Tvj = 25C 0,95 mJ Turn-off energy loss per pulse V = 15 V T = 125C E 1,45 mJ GE vj off RGoff = 62 VGE 15 V, VCC = 900 V I SC SC data V = V -L di/dt t 10 s, T = 125C 60 A CEmax CES sCE P vj IGBT / per IGBT R 1,30 1,45 K/W thJC Thermal resistance, junction to case IGBT / per IGBT R 0,60 K/W thCH Thermal resistance, case to heatsink = 1 W/(mK) / = 1 W/(mK) Paste grease T -40 125 C vj op Temperature under switching conditions prepared by: DPK date of publication: 2013-10-03 approved by: IG revision: 2.0 1 / Technical Information IGBT- FS15R12VT3 IGBT-modules Preliminary Data , / Diode, Inverter / Maximum Rated Values T = 25C V 1200 V vj RRM Repetitive peak reverse voltage I 15 A F Continuous DC forward current t = 1 ms I 30 A P FRM Repetitive peak forward current I2t- V = 0 V, t = 10 ms, T = 125C It 67,0 As R P vj It - value / Characteristic Values min. typ. max. I = 15 A, V = 0 V T = 25C 1,65 2,10 V F GE vj VF Forward voltage I = 15 A, V = 0 V T = 125C 1,65 V F GE vj I = 15 A, - di /dt = 900 A/s (T =125C) T = 25C 23,0 A F F vj vj Peak reverse recovery current V = 600 V T = 125C I 23,0 A R vj RM V = -15 V GE I = 15 A, - di /dt = 900 A/s (T =125C) T = 25C 1,75 C F F vj vj Recovered charge V = 600 V T = 125C Q 2,80 C R vj r V = -15 V GE I = 15 A, - di /dt = 900 A/s (T =125C) T = 25C 0,52 mJ F F vj vj Reverse recovery energy V = 600 V T = 125C E 0,94 mJ R vj rec V = -15 V GE / per diode R 1,95 2,15 K/W thJC Thermal resistance, junction to case / per diode RthCH 0,65 K/W Thermal resistance, case to heatsink = 1 W/(mK) / = 1 W/(mK) Paste grease T -40 125 C vj op Temperature under switching conditions / Module RMS, f = 50 Hz, t = 1 min V 2,5 kV ISOL Isolation test voltage (class 1, IEC 61140) AI203 Internal isolation basic insulation (class 1, IEC 61140) - / terminal to heatsink 5,0 mm Creepage distance - / terminal to terminal 10,0 - / terminal to heatsink 3,2 mm Clearance - / terminal to terminal 7,0 CTI > 225 Comperative tracking index min. typ. max. , L 20 nH sCE Stray inductance module ,- R 7,00 CC +EE TC = 25C, / per switch m Module lead resistance, terminals - chip RAA +CC 7,00 T -40 125 C stg Storage temperature Anpresskraft fr mech. Bef. pro Feder F 30 - 50 N mountig force per clamp G 10 g Weight With additional insulation of the mounting clamp higher values of creepage and clearance distances to the heatsink can be achieved. For more information call your responsible sales representative. prepared by: DPK date of publication: 2013-10-03 approved by: IG revision: 2.0 2