Technische Information / Technical Information IGBT-Modul FS200R12PT4P IGBT-Module EconoPACK4 Modul mit schnellem Trench/Feldstopp IGBT4 und Emitter Controlled 4 Diode und PressFIT / bereits aufgetragenem Thermal Interface Material EconoPACK4 module with fast Trench/Fieldstop IGBT4 and Emitter Controlled 4 diode and PressFIT / pre-applied Thermal Interface Material Vorlufige Daten / Preliminary Data V = 1200V CES I = 200A / I = 400A C nom CRM Typische Anwendungen Typical Applications Hochleistungsumrichter High power converters Motorantriebe Motor drives USV-Systeme UPS systems Elektrische Eigenschaften Electrical Features Erweiterte Sperrschichttemperatur T vj op Extended operating temperature Tvj op Niedrige Schaltverluste Low switching losses Niedriges V Low V CEsat CEsat V CEsat mit positivem Temperaturkoeffizienten VCEsat with positive temperature coefficient Mechanische Eigenschaften Mechanical Features 2,5 kV AC 1min Isolationsfestigkeit 2.5 kV AC 1min insulation Hohe Leistungsdichte High power density Isolierte Bodenplatte Isolated base plate Standardgehuse Standard housing Thermisches Interface Material bereits Pre-applied Thermal Interface Material aufgetragen Module Label Code Barcode Code 128 Content of the Code Digit Module Serial Number 1 - 5 Module Material Number 6 - 11 Production Order Number 12 - 19 DMX - Code Datecode (Production Year) 20 - 21 Datecode (Production Week) 22 - 23 prepared by: ZV date of publication: 2016-04-18 approved by: MK revision: V2.0 UL approved (E83335) 1Technische Information / Technical Information IGBT-Modul FS200R12PT4P IGBT-Module Vorlufige Daten Preliminary Data IGBT,Wechselrichter / IGBT,Inverter Hchstzulssige Werte / Maximum Rated Values Kollektor-Emitter-Sperrspannung T = 25C V 1200 V vj CES Collector-emitter voltage Kollektor-Dauergleichstrom T = 65C, T = 175C I 200 A H vj max C nom Continuous DC collector current Periodischer Kollektor-Spitzenstrom t = 1 ms I 400 A P CRM Repetitive peak collector current Gate-Emitter-Spitzenspannung V +/-20 V GES Gate-emitter peak voltage Charakteristische Werte / Characteristic Values min. typ. max. Kollektor-Emitter-Sttigungsspannung I = 200 A, V = 15 V T = 25C 1,75 2,15 V C GE vj Collector-emitter saturation voltage I = 200 A, V = 15 V T = 125C V 2,05 V C GE vj CE sat IC = 200 A, VGE = 15 V Tvj = 150C 2,10 V Gate-Schwellenspannung IC = 7,60 mA, VCE = VGE, Tvj = 25C VGEth 5,20 5,80 6,40 V Gate threshold voltage Gateladung V = -15 V ... +15 V Q 1,65 C GE G Gate charge Interner Gatewiderstand Tvj = 25C RGint 3,5 Internal gate resistor Eingangskapazitt f = 1 MHz, T = 25C, V = 25 V, V = 0 V C 14,0 nF vj CE GE ies Input capacitance Rckwirkungskapazitt f = 1 MHz, Tvj = 25C, VCE = 25 V, VGE = 0 V Cres 0,50 nF Reverse transfer capacitance Kollektor-Emitter-Reststrom V = 1200 V, V = 0 V, T = 25C I 1,0 mA CE GE vj CES Collector-emitter cut-off current Gate-Emitter-Reststrom VCE = 0 V, VGE = 20 V, Tvj = 25C IGES 100 nA Gate-emitter leakage current Einschaltverzgerungszeit, induktive Last IC = 200 A, VCE = 600 V Tvj = 25C 0,14 s t d on Turn-on delay time, inductive load V = 15 V T = 125C 0,15 s GE vj RGon = 1,1 Tvj = 150C 0,15 s Anstiegszeit, induktive Last IC = 200 A, VCE = 600 V Tvj = 25C 0,03 s t r Rise time, inductive load V = 15 V T = 125C 0,035 s GE vj RGon = 1,1 Tvj = 150C 0,04 s Abschaltverzgerungszeit, induktive Last IC = 200 A, VCE = 600 V Tvj = 25C 0,32 s t d off Turn-off delay time, inductive load V = 15 V T = 125C 0,40 s GE vj RGoff = 1,1 Tvj = 150C 0,42 s Fallzeit, induktive Last IC = 200 A, VCE = 600 V Tvj = 25C 0,09 s t f Fall time, inductive load V = 15 V T = 125C 0,16 s GE vj RGoff = 1,1 Tvj = 150C 0,18 s Einschaltverlustenergie pro Puls IC = 200 A, VCE = 600 V, LS = 30 nH Tvj = 25C 10,5 mJ Turn-on energy loss per pulse V = 15 V, di/dt = 5400 A/s (T = 150C) T = 125C E 18,5 mJ GE vj vj on RGon = 1,1 Tvj = 150C 20,5 mJ Abschaltverlustenergie pro Puls IC = 200 A, VCE = 600 V, LS = 30 nH Tvj = 25C 11,0 mJ Turn-off energy loss per pulse V = 15 V, du/dt = 5000 V/s (T = 150C)T = 125C E 16,5 mJ GE vj vj off RGoff = 1,1 Tvj = 150C 18,5 mJ Kurzschluverhalten VGE 15 V, VCC = 800 V I SC SC data V = V -L di/dt t 10 s, T = 150C 800 A CEmax CES sCE P vj Wrmewiderstand, Chip bis Khlkrper pro IGBT / per IGBT RthJH 0,213 K/W Thermal resistance, junction to heatsink valid with IFX pre-applied thermal interface material Temperatur im Schaltbetrieb T -40 150 C vj op Temperature under switching conditions prepared by: ZV date of publication: 2016-04-18 approved by: MK revision: V2.0 2