/ Technical Information IGBT- FS225R12OE4 IGBT-modules EconoPACK+ /IGBT4HE pressfitNTC EconoPACK+ module with Trench/Fieldstop IGBT4 and Emitter Controlled HE diode and PressFIT / NTC VCES = 1200V I = 225A / I = 450A C nom CRM Typical Applications Elevators High Power Converters Commercial Agriculture Vehicles Motor Drives Solar Applications UPS UPS Systems Electrical Features High Short Circuit Capability, Self Limiting Short Circuit Current Unbeatable Robustness IGBT4 Trench IGBT 4 T = 150C T = 150C vj op vj op High surge current capability Mechanical Features High mechanical robustness NTC Integrated NTC temperature sensor Isolated Base Plate PressFIT PressFIT Contact Technology RoHS RoHS compliant Module Label Code Barcode Code 128 Content of the Code Digit Module Serial Number 1 - 5 Module Material Number 6 - 11 Production Order Number 12 - 19 DMX - Code Datecode (Production Year) 20 - 21 Datecode (Production Week) 22 - 23 prepared by: CU date of publication: 2013-11-05 approved by: WR revision: 3.1 UL approved (E83335) 1 / Technical Information IGBT- FS225R12OE4 IGBT-modules IGBT, / IGBT,Inverter / Maximum Rated Values T = 25C V 1200 V vj CES Collector-emitter voltage T = 100C, T = 175C I 225 A C vj max C nom Continuous DC collector current TC = 25C, Tvj max = 175C IC 350 A t = 1 ms I 450 A P CRM Repetitive peak collector current T = 25C, T = 175C P 1250 W C vj max tot Total power dissipation VGES +/-20 V Gate-emitter peak voltage / Characteristic Values min. typ. max. I = 225 A, V = 15 V T = 25C 1,85 2,15 V C GE vj Collector-emitter saturation voltage I = 225 A, V = 15 V T = 125C V 2,10 V C GE vj CE sat I = 225 A, V = 15 V T = 150C 2,15 V C GE vj I = 7,80 mA, V = V , T = 25C V 5,2 5,8 6,4 V C CE GE vj GEth Gate threshold voltage VGE = -15 V ... +15 V QG 1,55 C Gate charge T = 25C R 3,3 vj Gint Internal gate resistor f = 1 MHz, Tvj = 25C, VCE = 25 V, VGE = 0 V Cies 13,0 nF Input capacitance f = 1 MHz, T = 25C, V = 25 V, V = 0 V C 0,705 nF vj CE GE res Reverse transfer capacitance - VCE = 1200 V, VGE = 0 V, Tvj = 25C ICES 3,0 mA Collector-emitter cut-off current - V = 0 V, V = 20 V, T = 25C I 400 nA CE GE vj GES Gate-emitter leakage current () I = 225 A, V = 600 V T = 25C 0,17 s C CE vj t d on Turn-on delay time, inductive load VGE = 15 V Tvj = 125C 0,18 s R = 0,75 T = 150C 0,19 s Gon vj () I = 225 A, V = 600 V T = 25C 0,04 s C CE vj t r Rise time, inductive load VGE = 15 V Tvj = 125C 0,04 s R = 0,75 T = 150C 0,04 s Gon vj () I = 225 A, V = 600 V T = 25C 0,34 s C CE vj t d off Turn-off delay time, inductive load VGE = 15 V Tvj = 125C 0,45 s R = 0,75 T = 150C 0,47 s Goff vj () I = 225 A, V = 600 V T = 25C 0,06 s C CE vj t f Fall time, inductive load VGE = 15 V Tvj = 125C 0,09 s R = 0,75 T = 150C 0,10 s Goff vj () I = 225 A, V = 600 V, L = 35 nH T = 25C 12,0 mJ C CE S vj Turn-on energy loss per pulse VGE = 15 V, di/dt = 5200 A/s (Tvj = 150C) Tvj = 125C Eon 20,0 mJ R = 0,75 T = 150C 22,5 mJ Gon vj ( I = 225 A, V = 600 V, L = 35 nH T = 25C 18,5 mJ C CE S vj Turn-off energy loss per pulse VGE = 15 V, du/dt = 3200 V/s (Tvj = 150C)Tvj = 125C Eoff 28,5 mJ R = 0,75 T = 150C 31,0 mJ Goff vj V 15 V, V = 800 V GE CC ISC SC data VCEmax = VCES -LsCE di/dt tP 10 s, Tvj = 150C 900 A IGBT / per IGBT R 0,12 K/W thJC Thermal resistance, junction to case IGBT / per IGBT R 0,046 K/W thCH Thermal resistance, case to heatsink Paste = 1 W/(mK) / grease = 1 W/(mK) T -40 150 C vj op Temperature under switching conditions prepared by: CU date of publication: 2013-11-05 approved by: WR revision: 3.1 2