Technische Information / technical information IGBT-Module FS25R12KE3 G IGBT-Modules Hchstzulssige Werte / maximum rated values Elektrische Eigenschaften / electrical properties Kollektor Emitter Sperrspannung T = 25C V 1200 V vj CES collector emitter voltage 25 A Kollektor Dauergleichstrom T = 80C I c C, nom DC collector current T = 25C I 40 A c C Periodischer Kollektor Spitzenstrom t = 1ms, T = 80C I 50 A p c CRM repetitive peak collector current Gesamt Verlustleistung T = 25C Transistor P 145 W c tot total power dissipation Gate Emitter Spitzenspannung V +20 V GES gate emitter peak voltage Dauergleichstrom I 25 A F DC forward current Periodischer Spitzenstrom t = 1ms I 50 A p FRM repetitive peak forward current Grenzlastintegral V = 0V, t = 10ms, T = 125C It 170 As R p vj It value Isolations Prfspannung RMS, f= 50Hz, t= 1min. V 2,5 kV ISOL insulation test voltage Charakteristische Werte / characteristic values Transistor Wechselrichter / transistor inverter min. typ. max. I = 25A, V = 15V, T = 25C C GE vj - 1,7 2,15 V Kollektor Emitter Sttigungsspannung V CEsat collector emitter saturation voltage I = 25A, V = 15V, T = 125C - 2,0 - V C GE vj Gate Schwellenspannung I = 1mA, V = V , T = 25C V 5,0 5,8 6,5 V C CE GE vj GE(th) gate threshold voltage Gateladung V = -15V...+15V Q 0,24 C GE G - - gate charge Eingangskapazitt f= 1MHz, T = 25C, V = 25V, V = 0V C - 1,8 - nF vj CE GE ies input capacitance Rckwirkungskapazitt f= 1MHz, T = 25C, V = 25V, V = 0V C - 0,064 - nF vj CE GE res reverse transfer capacitance Kollektor Emitter Reststrom V = 1200V, V = 0V, T = 25C I - - 5 mA CE GE vj CES collector emitter cut off current Gate Emitter Reststrom V = 0V, V = 20V, T = 25C I - - 400 nA CE GE vj GES gate emitter leakage current prepared by: MOD-D2 M. Mnzer date of publication: 2002-09-03 approved: SM TM Robert Severin revision: 3.0 DB FS25R12KE3 G 3.0.xls 1 (8) 2002-09-03Technische Information / technical information IGBT-Module FS25R12KE3 G IGBT-Modules Charakteristische Werte / characteristic values Transistor Wechselrichter / transistor inverter min. typ. max. I = 25A, V = 600V C CC Einschaltverzgerungszeit (induktive Last) V = 15V, R = 36, T = 25C t - 0,09 - s GE G vj d,on turn on delay time (inductive load) V = 15V, R = 36, T = 125C GE G vj - 0,09 - s I = 25A, V = 600V C CC Anstiegszeit (induktive Last) V = 15V, R = 36, T = 25C t - 0,03 - s GE G vj r rise time (inductive load) V = 15V, R = 36, T = 125C GE G vj - 0,05 - s I = 25A, V = 600V C CC Abschaltverzgerungszeit (induktive Last) V = 15V, R = 36, T = 25C t - 0,42 - s GE G vj d,off turn off delay time (inductive load) V = 15V, R = 36, T = 125C GE G vj - 0,52 - s I = 25A, V = 600V C CC Fallzeit (induktive Last) V = 15V, R = 36, T = 25C t - 0,07 - s GE G vj f fall time (inductive load) V = 15V, R = 36, T = 125C GE G vj - 0,09 - s I = 25A, V = 600V, L = 70nH C CC Einschaltverlustenergie pro Puls E - 2,5 - mJ on turn on energy loss per pulse V = 15V, R = 36, T = 125C GE G vj I = 25A, V = 600V, L = 70nH C CC Ausschaltverlustenergie pro Puls E - 3,4 - mJ off turn off energy loss per pulse V = 15V, R = 36, T = 125C GE G vj t 10s, V 15V, T 125C P GE Vj Kurzschlussverhalten I - 100 - A SC SC data V = 900V, V = V - L di/dt CC CEmax CES CE Modulinduktivitt L - 19 - nH CE stray inductance module Leitungswiderstand, Anschluss-Chip T = 25C R - 2,5 - m c CC/EE lead resistance, terminal-chip Charakteristische Werte / characteristic values Diode Wechselrichter / diode inverter I = 25A, V = 0V, T = 25C F GE vj - 1,65 2,15 V Durchlassspannung V F forward voltage I = 25A, V = 0V, T = 125C - 1,65 - V F GE vj I = 25A, -di /dt= 1100A/s F F Rckstromspitze I RM A V = 600V, V = -15V, T = 25C - 33 - R GE vj peak reverse recovery current A - 35 - V = 600V, V = -15V, T = 125C R GE vj I = 25A, -di /dt= 1100A/s F F Sperrverzgerungsladung Q r C V = 600V, V = -15V, T = 25C - 2,6 - R GE vj recovered charge C - 4,9 - V = 600V, V = -15V, T = 125C R GE vj I = 25A, -di /dt= 1100A/s F F Ausschaltenergie pro Puls E rec mJ V = 600V, V = -15V, T = 25C - 1,1 - R GE vj reverse recovery energy mJ - 2,1 - V = 600V, V = -15V, T = 125C R GE vj DB FS25R12KE3 G 3.0.xls 2 (8) 2002-09-03