FS3L200R10W3S7F B11 EasyPACK Modul mit TRENCHSTOP IGBT7 und CoolSiC Schottky Diode und PressFIT / NTC EasyPACK module with TRENCHSTOP IGBT7 and CoolSiC Schottky diode and PressFIT / NTC V = 950V CES I = 100A / I = 200A C nom CRM Potentielle Anwendungen Potential Applications 3-Level-Applikationen 3-level-applications Solar Anwendungen Solar applications USV-Systeme UPS systems Elektrische Eigenschaften Electrical Features TM TM CoolSiC Schottky Diode Gen 5 CoolSiC Schottky diode gen 5 Niedrige Schaltverluste Low switching losses TM TM Trenchstop IGBT7 Trenchstop IGBT7 Mechanische Eigenschaften Mechanical Features Al2O3 Substrat mit kleinem thermischen Al2O 3 substrate with low thermal resistance Widerstand Integrierter NTC Temperatur Sensor Integrated NTC temperature sensor Kompaktes Design Compact design PressFIT Verbindungstechnik PressFIT contact technology Module Label Code Barcode Code 128 Content of the Code Digit Module Serial Number 1 - 5 Module Material Number 6 - 11 Production Order Number 12 - 19 DMX - Code Datecode (Production Year) 20 - 21 Datecode (Production Week) 22 - 23 Datasheet Please read the Important Notice and Warnings at the end of this document V 3.0 www.infineon.com 2020-05-08FS3L200R10W3S7F B11 IGBT, Hochsetzsteller / IGBT, Boost Hchstzulssige Werte / Maximum Rated Values Kollektor-Emitter-Sperrspannung T = 25C V 950 V vj CES Collector-emitter voltage Implementierter Kollektor-Strom ICN 100 A Implemented collector current Kollektor-Dauergleichstrom T = 65C, T = 175C I 70 A H vj max CDC Continuous DC collector current Periodischer Kollektor-Spitzenstrom tP = 1 ms ICRM 200 A Repetitive peak collector current Gate-Emitter-Spitzenspannung V +/-20 V GES Gate-emitter peak voltage Charakteristische Werte / Characteristic Values min. typ. max. Kollektor-Emitter-Sttigungsspannung I = 25 A T = 25C 1,27 1,55 V C vj Collector-emitter saturation voltage VGE = 15 V Tvj = 125C VCE sat 1,33 V T = 150C 1,33 V vj Gate-Schwellenspannung I = 1,67 mA, V = V , T = 25C V 4,35 5,10 5,85 V C CE GE vj GEth Gate threshold voltage Gateladung VGE = -15 / 15 V, VCE = 600 V QG 0,23 C Gate charge Interner Gatewiderstand T = 25C R 1,5 vj Gint Internal gate resistor Eingangskapazitt f = 100 kHz, Tvj = 25C, VCE = 25 V, VGE = 0 V Cies 6,48 nF Input capacitance Rckwirkungskapazitt f = 100 kHz, T = 25C, V = 25 V, V = 0 V C 0,02 nF vj CE GE res Reverse transfer capacitance Kollektor-Emitter-Reststrom VCE = 950 V, VGE = 0 V Tvj = 25C ICES 0,031 mA Collector-emitter cut-off current Gate-Emitter-Reststrom V = 0 V, V = 20 V, T = 25C I 100 nA CE GE vj GES Gate-emitter leakage current Einschaltverzgerungszeit, induktive Last I = 25 A, V = 500 V T = 25C 0,074 s C CE vj td on Turn-on delay time, inductive load VGE = -15 / 15 V Tvj = 125C 0,071 s R = 10 T = 150C 0,062 s Gon vj Anstiegszeit, induktive Last I = 25 A, V = 500 V T = 25C 0,013 s C CE vj tr Rise time, inductive load V = -15 / 15 V T = 125C 0,015 s GE vj R = 10 T = 150C 0,015 s Gon vj Abschaltverzgerungszeit, induktive Last I = 25 A, V = 500 V T = 25C 0,178 s C CE vj td off Turn-off delay time, inductive load V = -15 / 15 V T = 125C 0,275 s GE vj R = 10 T = 150C 0,308 s Goff vj Fallzeit, induktive Last I = 25 A, V = 500 V T = 25C 0,107 s C CE vj tf Fall time, inductive load V = -15 / 15 V T = 125C 0,139 s GE vj R = 10 T = 150C 0,161 s Goff vj Einschaltverlustenergie pro Puls I = 25 A, V = 500 V, L = 35 nH T = 25C 0,575 mJ C CE vj Turn-on energy loss per pulse di/dt = 880 A/s (T = 150C) T = 125C E 0,589 mJ vj vj on V = -15 / 15 V, R = 10 T = 150C 0,596 mJ GE Gon vj Abschaltverlustenergie pro Puls I = 25 A, V = 500 V, L = 35 nH T = 25C 1,05 mJ C CE vj Turn-off energy loss per pulse du/dt = 2700 V/s (T = 150C) T = 125C E 1,62 mJ vj vj off V = -15 / 15 V, R = 10 T = 150C 1,79 mJ GE Goff vj Kurzschluverhalten V 15 V, V = 600 V GE CC ISC SC data V = V -L di/dt t 0 s, T = 150C 300 A CEmax CES sCE P vj Wrmewiderstand, Chip bis Khlkrper pro IGBT / per IGBT R 0,673 K/W thJH Thermal resistance, junction to heatsink Temperatur im Schaltbetrieb Tvj op -40 150 C Temperature under switching conditions Datasheet 2 V 3.0 2020-05-08