Technische Information / technical information FS400R12A2T4 HybridPACK2 Modul mit Trench/Feldstopp IGBT4 und Emitter Controlled 4 Diode und NTC HybridPACK2 module with Trench/Fieldstop IGBT4 and Emitter Controlled 4 diode and NTC T T T V = 1200V I = 400A / I = 800A Typische Anwendungen Typical Applications Anwendungen im Automobil Automotive Applications Hochleistungsumrichter High Power Converters Hybrid-Elektrofahrzeuge (H)EV Hybrid Electrical Vehicles (H)EV Hybrid-Nutzfahrzeuge Commercial Agriculture Vehicles Motorantriebe Motor Drives Elektrische Eigenschaften Electrical Features Erhhte Zwischenkreisspannung Increased DC link Voltage Niederinduktives Design Low inductive design Niedrige Schaltverluste Low Switching Losses Trench IGBT 4 Trench IGBT 4 T = 150C T = 150C V mit positivem Temperaturkoeffizienten V with positive Temperature Coefficient Mechanische Eigenschaften Mechanical Features 2,5 kV AC 1min Isolationsfestigkeit 2.5 kV AC 1min Insulation Direkt gekhlte Bodenplatte Direct Cooled Base Plate Hohe Leistungsdichte High Power Density Integrierter NTC Temperatur Sensor Integrated NTC temperature sensor Isolierte Bodenplatte Isolated Base Plate Kupferbodenplatte Copper Base Plate RoHS konform RoHS compliant Module Label Code Barcode Code 128 Content of the Code Digit Module Serial Number 1 - 5 Module Material Number 6 - 11 Production Order Number 12 - 19 DMX - Code Datecode (Production Year) 20 - 21 Datecode (Production Week) 22 - 23 prepared by: AU date of publication: 2012-11-06 material no: 36841 approved by: MM revision: 3.0 UL approved (E83335) 1Technische Information / technical information FS400R12A2T4 IGBT-Wechselrichter / IGBT-inverter Hchstzulssige Werte / Maximum Rated Values Kollektor-Emitter-Sperrspannung T = 25C V 1200 V vj CES Collector-emitter voltage Implementierter Kollektor-Strom I 400 A CN Implemented collector current Kollektor-Dauergleichstrom TF = 75C, Tvj = 175C IC nom 300 A Continuous DC collector current T = 25C, T = 175C I 400 A F vj C Periodischer Kollektor-Spitzenstrom t = 1 ms I 800 A P CRM Repetitive peak collector current Gesamt-Verlustleistung TF = 25C, Tvj = 175C Ptot 1500 W Total power dissipation Gate-Emitter-Spitzenspannung V +/-20 V GES Gate-emitter peak voltage Charakteristische Werte / Characteristic Values min. typ. max. Kollektor-Emitter-Sttigungsspannung I = 300 A, V = 15 V T = 25C 1,55 1,85 V C GE vj Collector-emitter saturation voltage I = 300 A, V = 15 V T = 125C V 1,75 V C GE vj CE sat I = 300 A, V = 15 V T = 150C 1,80 V C GE vj Gate-Schwellenspannung IC = 13,0 mA, VCE = VGE, Tvj = 25C VGEth 5,2 5,8 6,4 V Gate threshold voltage Gateladung V = -15 V ... +15 V Q 3,20 C GE G Gate charge Interner Gatewiderstand Tvj = 25C RGint 1,9 Internal gate resistor Eingangskapazitt f = 1 MHz, T = 25C, V = 25 V, V = 0 V C 25,0 nF vj CE GE ies Input capacitance Rckwirkungskapazitt f = 1 MHz, Tvj = 25C, VCE = 25 V, VGE = 0 V Cres 1,10 nF Reverse transfer capacitance Kollektor-Emitter-Reststrom V = 1200 V, V = 0 V, T = 25C I 1,0 mA CE GE vj CES Collector-emitter cut-off current Gate-Emitter-Reststrom V = 0 V, V = 20 V, T = 25C I 400 nA CE GE vj GES Gate-emitter leakage current Einschaltverzgerungszeit, induktive Last IC = 300 A, VCE = 500 V Tvj = 25C 0,16 s t d on Turn-on delay time, inductive load V = 15 V T = 125C 0,18 s GE vj RGon = 1,5 Tvj = 150C 0,19 s Anstiegszeit, induktive Last IC = 300 A, VCE = 500 V Tvj = 25C 0,05 s t r Rise time, inductive load V = 15 V T = 125C 0,05 s GE vj RGon = 1,5 Tvj = 150C 0,06 s Abschaltverzgerungszeit, induktive Last IC = 300 A, VCE = 500 V Tvj = 25C 0,42 s t d off Turn-off delay time, inductive load V = 15 V T = 125C 0,53 s GE vj RGoff = 1,5 Tvj = 150C 0,61 s Fallzeit, induktive Last IC = 300 A, VCE = 500 V Tvj = 25C 0,04 s t f Fall time, inductive load V = 15 V T = 125C 0,09 s GE vj RGoff = 1,5 Tvj = 150C 0,09 s Einschaltverlustenergie pro Puls IC = 300 A, VCE = 500 V, LS = 20 nH Tvj = 25C 17,0 mJ Turn-on energy loss per pulse V = 15 V, di/dt = 5500 A/s (T =150C) T = 125C E 24,0 mJ GE vj vj on RGon = 1,5 Tvj = 150C 26,0 mJ Abschaltverlustenergie pro Puls IC = 300 A, VCE = 500 V, LS = 20 nH Tvj = 25C 13,0 mJ Turn-off energy loss per pulse V = 15 V, du/dt = 2550 V/s (T =150C) T = 125C E 26,0 mJ GE vj vj off RGoff = 1,5 Tvj = 150C 30,0 mJ Kurzschluverhalten VGE 15 V, VCC = 900 V tP 8 s, Tvj = 25C 2300 A I SC SC data V = V -L di/dt t 6 s, T = 150C 2000 A CEmax CES sCE P vj Wrmewiderstand, Chip bis Gehuse pro IGBT / per IGBT Thermal resistance, junction to case cooling fluid = 50% water/50% ethylenglycol V/t = RthJF 0,10 K/W 10,0 dm/min prepared by: AU date of publication: 2012-11-06 approved by: MM revision: 3.0 2