FS450R12OE4P EconoPACK+ Modul mit Trench/Feldstopp IGBT4 und Emitter Controlled HE Diode und PressFIT / bereits aufgetragenem Thermal Interface Material EconoPACK+ module with Trench/Fieldstop IGBT4 and Emitter Controlled HE diode and PressFIT / pre-applied Thermal Interface Material V = 1200V CES I = 450A / I = 900A C nom CRM Typische Anwendungen Typical Applications Hochleistungsumrichter High power converters Hybrid-Nutzfahrzeuge Commercial Agriculture Vehicles Motorantriebe Motor drives Solar Anwendungen Solar applications USV-Systeme UPS systems Elektrische Eigenschaften Electrical Features Hohe Kurzschlussrobustheit High short-circuit capability Hohe Stostromfestigkeit High surge current capability Sehr groe Robustheit Unbeatable robustness T = 150C T = 150C vj op vj op Trench IGBT 4 Trench IGBT 4 Mechanische Eigenschaften Mechanical Features Hohe mechanische Robustheit High mechanical robustness Integrierter NTC Temperatur Sensor Integrated NTC temperature sensor PressFIT Verbindungstechnik PressFIT contact technology RoHS konform RoHS compliant Thermisches Interface Material bereits Pre-applied Thermal Interface Material aufgetragen Module Label Code Barcode Code 128 Content of the Code Digit Module Serial Number 1 - 5 Module Material Number 6 - 11 Production Order Number 12 - 19 DMX - Code Datecode (Production Year) 20 - 21 Datecode (Production Week) 22 - 23 Datasheet Please read the Important Notice and Warnings at the end of this document V 3.0 www.infineon.com 2016-11-09FS450R12OE4P IGBT,Wechselrichter / IGBT,Inverter Hchstzulssige Werte / Maximum Rated Values Kollektor-Emitter-Sperrspannung T = 25C V 1200 V vj CES Collector-emitter voltage Kollektor-Dauergleichstrom TH = 60C, Tvj max = 175C IC nom 450 A Continuous DC collector current Periodischer Kollektor-Spitzenstrom t = 1 ms I 900 A P CRM Repetitive peak collector current Gate-Emitter-Spitzenspannung VGES +/-20 V Gate-emitter peak voltage Charakteristische Werte / Characteristic Values min. typ. max. Kollektor-Emitter-Sttigungsspannung IC = 450 A, VGE = 15 V Tvj = 25C 1,75 2,10 V Collector-emitter saturation voltage I = 450 A, V = 15 V T = 125C V 2,00 V C GE vj CE sat IC = 450 A, VGE = 15 V Tvj = 150C 2,05 V Gate-Schwellenspannung IC = 17,0 mA, VCE = VGE, Tvj = 25C VGEth 5,20 5,80 6,40 V Gate threshold voltage Gateladung V = -15 V ... +15 V Q 3,30 C GE G Gate charge Interner Gatewiderstand Tvj = 25C RGint 1,7 Internal gate resistor Eingangskapazitt f = 1 MHz, T = 25C, V = 25 V, V = 0 V C 28,0 nF vj CE GE ies Input capacitance Rckwirkungskapazitt f = 1 MHz, Tvj = 25C, VCE = 25 V, VGE = 0 V Cres 1,55 nF Reverse transfer capacitance Kollektor-Emitter-Reststrom V = 1200 V, V = 0 V, T = 25C I 3,0 mA CE GE vj CES Collector-emitter cut-off current Gate-Emitter-Reststrom VCE = 0 V, VGE = 20 V, Tvj = 25C IGES 400 nA Gate-emitter leakage current Einschaltverzgerungszeit, induktive Last IC = 450 A, VCE = 600 V Tvj = 25C 0,19 s t d on Turn-on delay time, inductive load V = 15 V T = 125C 0,22 s GE vj R = 1,0 T = 150C 0,22 s Gon vj Anstiegszeit, induktive Last IC = 450 A, VCE = 600 V Tvj = 25C 0,06 s t r Rise time, inductive load V = 15 V T = 125C 0,06 s GE vj R = 1,0 T = 150C 0,07 s Gon vj Abschaltverzgerungszeit, induktive Last I = 450 A, V = 600 V T = 25C 0,44 s C CE vj t d off Turn-off delay time, inductive load V = 15 V T = 125C 0,55 s GE vj R = 1,0 T = 150C 0,57 s Goff vj Fallzeit, induktive Last I = 450 A, V = 600 V T = 25C 0,06 s C CE vj t f Fall time, inductive load V = 15 V T = 125C 0,10 s GE vj R = 1,0 T = 150C 0,11 s Goff vj Einschaltverlustenergie pro Puls I = 450 A, V = 600 V, L = 35 nH T = 25C 25,0 mJ C CE S vj Turn-on energy loss per pulse V = 15 V, di/dt = 6300 A/s (T = 150C) T = 125C E 40,5 mJ GE vj vj on R = 1,0 T = 150C 44,0 mJ Gon vj Abschaltverlustenergie pro Puls I = 450 A, V = 600 V, L = 35 nH T = 25C 37,0 mJ C CE S vj Turn-off energy loss per pulse V = 15 V, du/dt = 3100 V/s (T = 150C)T = 125C E 56,5 mJ GE vj vj off R = 1,0 T = 150C 63,0 mJ Goff vj Kurzschluverhalten V 15 V, V = 800 V GE CC I SC SC data V = V -L di/dt t 10 s, T = 150C 1800 A CEmax CES sCE P vj Wrmewiderstand, Chip bis Khlkrper pro IGBT / per IGBT RthJH 0,104 K/W Thermal resistance, junction to heatsink valid with IFX pre-applied thermal interface material Temperatur im Schaltbetrieb T -40 150 C vj op Temperature under switching conditions Datasheet 2 V 3.0 2016-11-09