/ Technical Information IGBT- FS500R17OE4D IGBT-Module EconoPACK+ /IGBT4 pressfitNTC EconoPACK+ module with Trench/Fieldstop IGBT4 and Emitter Controlled 3 diode and PressFIT / NTC VCES = 1700V I = 500A / I = 1000A C nom CRM Typical Applications Auxiliary Inverters High Power Converters Motor Drives Wind Turbines Electrical Features High Short Circuit Capability, Self Limiting Short Circuit Current Unbeatable Robustness IGBT4 Trench IGBT 4 T = 150C T = 150C vj op vj op High surge current capability Mechanical Features High mechanical robustness NTC Integrated NTC temperature sensor Isolated Base Plate PressFIT PressFIT Contact Technology RoHS RoHS compliant Module Label Code Barcode Code 128 Content of the Code Digit Module Serial Number 1 - 5 Module Material Number 6 - 11 Production Order Number 12 - 19 DMX - Code Datecode (Production Year) 20 - 21 Datecode (Production Week) 22 - 23 prepared by: CU date of publication: 2014-05-12 approved by: JDB revision: 3.0 1 / Technical Information IGBT- FS500R17OE4D IGBT-Module IGBT, / IGBT,Inverter / Maximum Rated Values T = 25C V 1700 V vj CES Collector-emitter voltage T = 95C, T = 175C I 500 A C vj max C nom Continuous DC collector current TC = 25C, Tvj max = 175C IC 740 A t = 1 ms I 1000 A P CRM Repetitive peak collector current T = 25C, T = 175C P 3000 W C vj max tot Total power dissipation VGES +/-20 V Gate-emitter peak voltage / Characteristic Values min. typ. max. I = 500 A, V = 15 V T = 25C 1,95 2,30 V C GE vj Collector-emitter saturation voltage I = 500 A, V = 15 V T = 125C V 2,35 V C GE vj CE sat I = 500 A, V = 15 V T = 150C 2,45 V C GE vj I = 20,0 mA, V = V , T = 25C V 5,2 5,8 6,4 V C CE GE vj GEth Gate threshold voltage VGE = -15 V ... +15 V QG 5,10 C Gate charge T = 25C R 1,5 vj Gint Internal gate resistor f = 1 MHz, Tvj = 25C, VCE = 25 V, VGE = 0 V Cies 40,0 nF Input capacitance f = 1 MHz, T = 25C, V = 25 V, V = 0 V C 1,30 nF vj CE GE res Reverse transfer capacitance - VCE = 1700 V, VGE = 0 V, Tvj = 25C ICES 3,0 mA Collector-emitter cut-off current - V = 0 V, V = 20 V, T = 25C I 400 nA CE GE vj GES Gate-emitter leakage current () I = 500 A, V = 900 V T = 25C 0,19 s C CE vj t d on Turn-on delay time, inductive load VGE = 15 V Tvj = 125C 0,23 s R = 1,8 T = 150C 0,24 s Gon vj () I = 500 A, V = 900 V T = 25C 0,08 s C CE vj t r Rise time, inductive load VGE = 15 V Tvj = 125C 0,08 s R = 1,8 T = 150C 0,09 s Gon vj () I = 500 A, V = 900 V T = 25C 0,70 s C CE vj t d off Turn-off delay time, inductive load VGE = 15 V Tvj = 125C 0,85 s R = 1,8 T = 150C 0,90 s Goff vj () I = 500 A, V = 900 V T = 25C 0,11 s C CE vj t f Fall time, inductive load VGE = 15 V Tvj = 125C 0,16 s R = 1,8 T = 150C 0,18 s Goff vj () I = 500 A, V = 900 V, L = 35 nH T = 25C 125 mJ C CE S vj Turn-on energy loss per pulse VGE = 15 V, di/dt = 6200 A/s (Tvj = 150C) Tvj = 125C Eon 165 mJ R = 1,8 T = 150C 175 mJ Gon vj ( I = 500 A, V = 900 V, L = 35 nH T = 25C 94,0 mJ C CE S vj Turn-off energy loss per pulse VGE = 15 V, du/dt = 3100 V/s (Tvj = 150C)Tvj = 125C Eoff 155 mJ R = 1,8 T = 150C 175 mJ Goff vj V 15 V, V = 1000 V GE CC ISC SC data VCEmax = VCES -LsCE di/dt tP 10 s, Tvj = 150C 2100 A IGBT / per IGBT R 0,05 K/W thJC Thermal resistance, junction to case IGBT / per IGBT R 0,036 K/W thCH Thermal resistance, case to heatsink Paste = 1 W/(mK) / grease = 1 W/(mK) T -40 150 C vj op Temperature under switching conditions prepared by: CU date of publication: 2014-05-12 approved by: JDB revision: 3.0 2