FS500R17OE4DP EconoPACK+ /IGBT4 pressfit EconoPACK+ module with Trench/Fieldstop IGBT4 and Emitter Controlled 3 diode and PressFIT / pre-applied Thermal Interface Material V = 1700V CES I = 500A / I = 1000A C nom CRM Typical Applications Auxiliary inverters High power converters Motor drives Wind turbines Electrical Features High short-circuit capability High surge current capability Unbeatable robustness T = 150C T = 150C vj op vj op IGBT4 Trench IGBT 4 Mechanical Features High mechanical robustness NTC Integrated NTC temperature sensor Isolated base plate PressFIT PressFIT contact technology RoHS RoHS compliant Pre-applied Thermal Interface Material Module Label Code Barcode Code 128 Content of the Code Digit Module Serial Number 1 - 5 Module Material Number 6 - 11 Production Order Number 12 - 19 DMX - Code Datecode (Production Year) 20 - 21 Datecode (Production Week) 22 - 23 Datasheet Please read the Important Notice and Warnings at the end of this document V 3.0 www.infineon.com 2016-11-08FS500R17OE4DP IGBT, / IGBT,Inverter / Maximum Rated Values T = 25C V 1700 V vj CES Collector-emitter voltage TH = 50C, Tvj max = 175C IC nom 500 A Continuous DC collector current t = 1 ms I 1000 A P CRM Repetitive peak collector current VGES +/-20 V Gate-emitter peak voltage / Characteristic Values min. typ. max. IC = 500 A, VGE = 15 V Tvj = 25C 1,95 2,30 V Collector-emitter saturation voltage I = 500 A, V = 15 V T = 125C V 2,35 V C GE vj CE sat IC = 500 A, VGE = 15 V Tvj = 150C 2,45 V IC = 20,0 mA, VCE = VGE, Tvj = 25C VGEth 5,20 5,80 6,40 V Gate threshold voltage V = -15 V ... +15 V Q 5,10 C GE G Gate charge Tvj = 25C RGint 1,5 Internal gate resistor f = 1 MHz, T = 25C, V = 25 V, V = 0 V C 40,0 nF vj CE GE ies Input capacitance f = 1 MHz, Tvj = 25C, VCE = 25 V, VGE = 0 V Cres 1,30 nF Reverse transfer capacitance - V = 1700 V, V = 0 V, T = 25C I 3,0 mA CE GE vj CES Collector-emitter cut-off current - VCE = 0 V, VGE = 20 V, Tvj = 25C IGES 400 nA Gate-emitter leakage current () IC = 500 A, VCE = 900 V Tvj = 25C 0,19 s t d on Turn-on delay time, inductive load V = 15 V T = 125C 0,23 s GE vj R = 1,8 T = 150C 0,24 s Gon vj () IC = 500 A, VCE = 900 V Tvj = 25C 0,08 s t r Rise time, inductive load V = 15 V T = 125C 0,08 s GE vj R = 1,8 T = 150C 0,09 s Gon vj () I = 500 A, V = 900 V T = 25C 0,70 s C CE vj t d off Turn-off delay time, inductive load V = 15 V T = 125C 0,85 s GE vj R = 1,8 T = 150C 0,90 s Goff vj () I = 500 A, V = 900 V T = 25C 0,11 s C CE vj t f Fall time, inductive load V = 15 V T = 125C 0,16 s GE vj R = 1,8 T = 150C 0,18 s Goff vj () I = 500 A, V = 900 V, L = 35 nH T = 25C 125 mJ C CE S vj Turn-on energy loss per pulse V = 15 V, di/dt = 6200 A/s (T = 150C) T = 125C E 165 mJ GE vj vj on R = 1,8 T = 150C 175 mJ Gon vj ( I = 500 A, V = 900 V, L = 35 nH T = 25C 94,0 mJ C CE S vj Turn-off energy loss per pulse V = 15 V, du/dt = 3100 V/s (T = 150C)T = 125C E 155 mJ GE vj vj off R = 1,8 T = 150C 175 mJ Goff vj V 15 V, V = 1000 V GE CC I SC SC data V = V -L di/dt t 10 s, T = 150C 2100 A CEmax CES sCE P vj IGBT / per IGBT RthJH 0,0852 K/W Thermal resistance, junction to heatsink valid with IFX pre-applied thermal interface material T -40 150 C vj op Temperature under switching conditions Datasheet 2 V 3.0 2016-11-08