The FS50R07N2E4B11BOSA1 is a medium voltage, 5 amp, insulated gate bipolar transistor (IGBT) made by Infineon Technologies. The device is manufactured using the company’s latest trench-based NexFET power chip technology, making it an ideal solution for reliable, cost-effective high-power, low-voltage applications. This IGBT can support output voltages of up to 1,500 V and features low gate charge, low on-resistance, and an integrated gate turn-off circuit for improved efficiency. The device also offers a wide operating temperature range of up to 150 °C, making it suitable for use in industrial and automotive applications.