Technische Information / Technical Information IGBT-Modul FS50R12U1T4 IGBT-Module SmartPACK1 Modul mit Trench/Feldstopp IGBT4 und Emitter Controlled 4 Diode und PressFIT / NTC SmartPACK1 module with Trench/Fieldstop IGBT4 and Emitter Controlled 4 diode and PressFIT / NTC J VCES = 1200V I = 50A / I = 100A C nom CRM Typische Anwendungen Typical Applications Klimaanlagen Air Conditioning Motorantriebe Motor Drives Servoumrichter Servo Drives USV-Systeme UPS Systems Elektrische Eigenschaften Electrical Features Niedrige Schaltverluste Low Switching Losses Niedriges V Low V CEsat CEsat Trench IGBT 4 Trench IGBT 4 V mit positivem Temperaturkoeffizienten V with positive Temperature Coefficient CEsat CEsat Mechanische Eigenschaften Mechanical Features Al O Substrat mit kleinem thermischen Al O Substrate with Low Thermal Resistance 2 3 2 3 Widerstand Kompaktes Design Compact design PressFIT Verbindungstechnik PressFIT Contact Technology Robuste Duplex-Rahmen Konstruktion Rugged Duplex frame construction Module Label Code Barcode Code 128 Content of the Code Digit Module Serial Number 1 - 5 Module Material Number 6 - 11 Production Order Number 12 - 19 DMX - Code Datecode (Production Year) 20 - 21 Datecode (Production Week) 22 - 23 prepared by: CM date of publication: 2014-11-05 approved by: MB revision: 3.0 UL approved (E83335) 1Technische Information / Technical Information IGBT-Modul FS50R12U1T4 IGBT-Module IGBT,Wechselrichter / IGBT,Inverter Hchstzulssige Werte / Maximum Rated Values Kollektor-Emitter-Sperrspannung T = 25C V 1200 V vj CES Collector-emitter voltage Kollektor-Dauergleichstrom T = 90C, T = 175C I 50 A C vj max C nom Continuous DC collector current TC = 25C, Tvj max = 175C IC 90 A Periodischer Kollektor-Spitzenstrom t = 1 ms I 100 A P CRM Repetitive peak collector current Gesamt-Verlustleistung T = 25C, T = 175C P 250 W C vj max tot Total power dissipation Gate-Emitter-Spitzenspannung VGES +/-20 V Gate-emitter peak voltage Charakteristische Werte / Characteristic Values min. typ. max. Kollektor-Emitter-Sttigungsspannung I = 50 A, V = 15 V T = 25C 1,85 2,15 V C GE vj Collector-emitter saturation voltage I = 50 A, V = 15 V T = 125C V 2,15 V C GE vj CE sat I = 50 A, V = 15 V T = 150C 2,25 V C GE vj Gate-Schwellenspannung I = 1,60 mA, V = V , T = 25C V 5,20 5,80 6,40 V C CE GE vj GEth Gate threshold voltage Gateladung VGE = -15 V ... +15 V QG 0,38 C Gate charge Interner Gatewiderstand T = 25C R 4,0 vj Gint Internal gate resistor Eingangskapazitt f = 1 MHz, Tvj = 25C, VCE = 25 V, VGE = 0 V Cies 2,80 nF Input capacitance Rckwirkungskapazitt f = 1 MHz, T = 25C, V = 25 V, V = 0 V C 0,10 nF vj CE GE res Reverse transfer capacitance Kollektor-Emitter-Reststrom VCE = 1200 V, VGE = 0 V, Tvj = 25C ICES 1,0 mA Collector-emitter cut-off current Gate-Emitter-Reststrom V = 0 V, V = 20 V, T = 25C I 100 nA CE GE vj GES Gate-emitter leakage current Einschaltverzgerungszeit, induktive Last I = 50 A, V = 600 V T = 25C 0,045 s C CE vj t d on Turn-on delay time, inductive load VGE = 15 V Tvj = 125C 0,05 s R = 15 T = 150C 0,05 s Gon vj Anstiegszeit, induktive Last I = 50 A, V = 600 V T = 25C 0,027 s C CE vj t r Rise time, inductive load VGE = 15 V Tvj = 125C 0,035 s R = 15 T = 150C 0,045 s Gon vj Abschaltverzgerungszeit, induktive Last I = 50 A, V = 600 V T = 25C 0,27 s C CE vj t d off Turn-off delay time, inductive load VGE = 15 V Tvj = 125C 0,37 s R = 15 T = 150C 0,40 s Goff vj Fallzeit, induktive Last I = 50 A, V = 600 V T = 25C 0,11 s C CE vj t f Fall time, inductive load VGE = 15 V Tvj = 125C 0,18 s R = 15 T = 150C 0,19 s Goff vj Einschaltverlustenergie pro Puls I = 50 A, V = 600 V, L = 35 nH T = 25C 4,20 mJ C CE S vj Turn-on energy loss per pulse VGE = 15 V, di/dt = 1500 A/s (Tvj = 150C) Tvj = 125C Eon 5,50 mJ R = 15 T = 150C 6,20 mJ Gon vj Abschaltverlustenergie pro Puls I = 50 A, V = 600 V, L = 35 nH T = 25C 2,90 mJ C CE S vj Turn-off energy loss per pulse VGE = 15 V, du/dt = 3800 V/s (Tvj = 150C)Tvj = 125C Eoff 4,20 mJ R = 15 T = 150C 4,60 mJ Goff vj Kurzschluverhalten V 15 V, V = 800 V GE CC ISC SC data VCEmax = VCES -LsCE di/dt tP 10 s, Tvj = 150C 180 A Wrmewiderstand, Chip bis Gehuse pro IGBT / per IGBT R 0,50 0,60 K/W thJC Thermal resistance, junction to case Wrmewiderstand, Gehuse bis Khlkrper pro IGBT / per IGBT R 0,40 K/W thCH Thermal resistance, case to heatsink Paste = 1 W/(mK) / grease = 1 W/(mK) Temperatur im Schaltbetrieb T -40 150 C vj op Temperature under switching conditions prepared by: CM date of publication: 2014-11-05 approved by: MB revision: 3.0 2