Technische Information / Technical Information IGBT-Module FS50R17KE3 B17 IGBT-modules EconoPACK2 Modul mit Trench/Feldstopp IGBT3 und Emitter Controlled 3 Diode EconoPACK2 module with Trench/Fieldstop IGBT3 and Emitter Controlled 3 diode V = 1700V CES I = 50A / I = 100A C nom CRM Typische Anwendungen Typical Applications Hilfsumrichter Auxiliary Inverters Motorantriebe Motor Drives Elektrische Eigenschaften Electrical Features Hohe Kurzschlussrobustheit, selbstlimitierender High Short Circuit Capability, Self Limiting Short Kurzschlussstrom Circuit Current Niedrige Schaltverluste Low Switching Losses V CEsat mit positivem Temperaturkoeffizienten VCEsat with positive Temperature Coefficient Niedriges V Low V CEsat CEsat Mechanische Eigenschaften Mechanical Features Kupferbodenplatte Copper Base Plate Standardgehuse Standard Housing Module Label Code Barcode Code 128 Content of the Code Digit Module Serial Number 1 - 5 Module Material Number 6 - 11 Production Order Number 12 - 19 DMX - Code Datecode (Production Year) 20 - 21 Datecode (Production Week) 22 - 23 prepared by: RH date of publication: 2013-10-03 approved by: RS revision: 3.0 UL approved (E83335) 1Technische Information / Technical Information IGBT-Module FS50R17KE3 B17 IGBT-modules IGBT,Wechselrichter / IGBT,Inverter Hchstzulssige Werte / Maximum Rated Values Kollektor-Emitter-Sperrspannung T = 25C V 1700 V vj CES Collector-emitter voltage Kollektor-Dauergleichstrom T = 80C, T = 150C I 50 A C vj max C nom Continuous DC collector current TC = 25C, Tvj max = 150C IC 82 A Periodischer Kollektor-Spitzenstrom t = 1 ms I 100 A P CRM Repetitive peak collector current Gesamt-Verlustleistung T = 25C, T = 150 P 345 W C vj max tot Total power dissipation Gate-Emitter-Spitzenspannung VGES +/-20 V Gate-emitter peak voltage Charakteristische Werte / Characteristic Values min. typ. max. Kollektor-Emitter-Sttigungsspannung I = 50 A, V = 15 V T = 25C 2,00 2,45 V C GE vj V CE sat Collector-emitter saturation voltage I = 50 A, V = 15 V T = 125C 2,40 V C GE vj Gate-Schwellenspannung IC = 2,00 mA, VCE = VGE, Tvj = 25C VGEth 5,2 5,8 6,4 V Gate threshold voltage Gateladung V = -15 V ... +15 V Q 0,60 C GE G Gate charge Interner Gatewiderstand Tvj = 25C RGint 9,5 Internal gate resistor Eingangskapazitt f = 1 MHz, T = 25C, V = 25 V, V = 0 V C 4,50 nF vj CE GE ies Input capacitance Rckwirkungskapazitt f = 1 MHz, Tvj = 25C, VCE = 25 V, VGE = 0 V Cres 0,15 nF Reverse transfer capacitance Kollektor-Emitter-Reststrom V = 1700 V, V = 0 V, T = 25C I 1,0 mA CE GE vj CES Collector-emitter cut-off current Gate-Emitter-Reststrom V = 0 V, V = 20 V, T = 25C I 400 nA CE GE vj GES Gate-emitter leakage current Einschaltverzgerungszeit, induktive Last IC = 50 A, VCE = 900 V Tvj = 25C 0,37 s t d on Turn-on delay time, inductive load V = 15 V T = 125C 0,40 s GE vj RGon = 8,0 Anstiegszeit, induktive Last IC = 50 A, VCE = 900 V Tvj = 25C 0,04 s t r Rise time, inductive load V = 15 V T = 125C 0,05 s GE vj RGon = 8,0 Abschaltverzgerungszeit, induktive Last IC = 50 A, VCE = 900 V Tvj = 25C 0,65 s t d off Turn-off delay time, inductive load V = 15 V T = 125C 0,80 s GE vj RGoff = 8,0 Fallzeit, induktive Last IC = 50 A, VCE = 900 V Tvj = 25C 0,18 s t f Fall time, inductive load V = 15 V T = 125C 0,30 s GE vj RGoff = 8,0 Einschaltverlustenergie pro Puls IC = 50 A, VCE = 900 V, LS = 30 nH Tvj = 25C 11,0 mJ Turn-on energy loss per pulse V = 15 V, di/dt = 1200 A/s T = 125C E 16,0 mJ GE vj on RGon = 8,0 Abschaltverlustenergie pro Puls IC = 50 A, VCE = 900 V, LS = 30 nH Tvj = 25C 10,5 mJ Turn-off energy loss per pulse V = 15 V, du/dt = 3500 V/s T = 125C E 15,5 mJ GE vj off RGoff = 8,0 Kurzschluverhalten VGE 15 V, VCC = 1000 V I SC SC data V = V -L di/dt t 10 s, T = 125C 200 A CEmax CES sCE P vj Wrmewiderstand, Chip bis Gehuse pro IGBT / per IGBT R 0,36 K/W thJC Thermal resistance, junction to case Wrmewiderstand, Gehuse bis Khlkrper pro IGBT / per IGBT R 0,19 K/W thCH Thermal resistance, case to heatsink = 1 W/(mK) / = 1 W/(mK) Paste grease Temperatur im Schaltbetrieb T -40 125 C vj op Temperature under switching conditions prepared by: RH date of publication: 2013-10-03 approved by: RS revision: 3.0 2