Technische Information / Technical Information IGBT-Module FS6R06VE3 B2 IGBT-modules IGBT,Wechselrichter / IGBT,Inverter Vorlufige Daten / Preliminary Data Hchstzulssige Werte / Maximum Rated Values Kollektor-Emitter-Sperrspannung T = 25C V 600 V vj CES Collector-emitter voltage Kollektor-Dauergleichstrom T = 80C, T = 175C I 6 A C vj C nom Continuous DC collector current TC = 25C, Tvj = 175C IC 11 A Periodischer Kollektor-Spitzenstrom t = 1 ms I 12 A P CRM Repetitive peak collector current Gesamt-Verlustleistung T = 25C, T = 175C P 40,5 W C vj tot Total power dissipation Gate-Emitter-Spitzenspannung VGES +/-20 V Gate-emitter peak voltage Charakteristische Werte / Characteristic Values min. typ. max. Kollektor-Emitter-Sttigungsspannung I = 6 A, V = 15 V T = 25C 1,55 2,00 V C GE vj Collector-emitter saturation voltage I = 6 A, V = 15 V T = 125C V 1,70 V C GE vj CE sat I = 6 A, V = 15 V T = 150C 1,80 V C GE vj Gate-Schwellenspannung I = 0,20 mA, V = V , T = 25C V 4,9 5,8 6,5 V C CE GE vj GEth Gate threshold voltage Gateladung VGE = -15 V ... +15 V QG 0,06 C Gate charge Interner Gatewiderstand T = 25C R 0,0 vj Gint Internal gate resistor Eingangskapazitt f = 1 MHz, Tvj = 25C, VCE = 25 V, VGE = 0 V Cies 0,33 nF Input capacitance Rckwirkungskapazitt f = 1 MHz, T = 25C, V = 25 V, V = 0 V C 0,01 nF vj CE GE res Reverse transfer capacitance Kollektor-Emitter-Reststrom VCE = 600 V, VGE = 0 V, Tvj = 25C ICES 1,0 mA Collector-emitter cut-off current Gate-Emitter-Reststrom V = 0 V, V = 20 V, T = 25C I 400 nA CE GE vj GES Gate-emitter leakage current Einschaltverzgerungszeit, induktive Last I = 6 A, V = 300 V T = 25C 0,012 s C CE vj t d on Turn-on delay time, inductive load VGE = 15 V Tvj = 125C 0,012 s R = 47 T = 150C 0,012 s Gon vj Anstiegszeit, induktive Last I = 6 A, V = 300 V T = 25C 0,009 s C CE vj t r Rise time, inductive load VGE = 15 V Tvj = 125C 0,013 s R = 47 T = 150C 0,014 s Gon vj Abschaltverzgerungszeit, induktive Last I = 6 A, V = 300 V T = 25C 0,10 s C CE vj t d off Turn-off delay time, inductive load VGE = 15 V Tvj = 125C 0,12 s R = 47 T = 150C 0,125 s Goff vj Fallzeit, induktive Last I = 6 A, V = 300 V T = 25C 0,085 s C CE vj t f Fall time, inductive load VGE = 15 V Tvj = 125C 0,13 s R = 47 T = 150C 0,135 s Goff vj Einschaltverlustenergie pro Puls I = 6 A, V = 300 V, L = 100 nH T = 25C 0,09 mJ C CE S vj Turn-on energy loss per pulse VGE = 15 V Tvj = 125C Eon 0,12 mJ R = 47 T = 150C 0,13 mJ Gon vj Abschaltverlustenergie pro Puls I = 6 A, V = 300 V, L = 100 nH T = 25C 0,14 mJ C CE S vj Turn-off energy loss per pulse VGE = 15 V Tvj = 125C Eoff 0,18 mJ R = 47 T = 150C 0,19 mJ Goff vj Kurzschluverhalten V 15 V, V = 360 V GE CC ISC SC data VCEmax = VCES -LsCE di/dt tP 6 s, Tvj = 150C 30 A Wrmewiderstand, Chip bis Gehuse pro IGBT / per IGBT R 3,30 3,70 K/W thJC Thermal resistance, junction to case Wrmewiderstand, Gehuse bis Khlkrper pro IGBT / per IGBT R 1,30 K/W thCH Thermal resistance, case to heatsink Paste = 1 W/(mK) / grease = 1 W/(mK) prepared by: DPK date of publication: 2013-03-01 approved by: RK revision: 2.0 1Technische Information / Technical Information IGBT-Module FS6R06VE3 B2 IGBT-modules Vorlufige Daten Preliminary Data Diode, Wechselrichter / Diode, Inverter Hchstzulssige Werte / Maximum Rated Values Periodische Spitzensperrspannung T = 25C V 600 V vj RRM Repetitive peak reverse voltage Dauergleichstrom I 6 A F Continuous DC forward current Periodischer Spitzenstrom t = 1 ms I 12 A P FRM Repetitive peak forward current Grenzlastintegral V = 0 V, t = 10 ms, T = 125C 6,50 As R P vj It It - value VR = 0 V, tP = 10 ms, Tvj = 150C 5,50 As Charakteristische Werte / Characteristic Values min. typ. max. Durchlassspannung I = 6 A, V = 0 V T = 25C 1,60 2,05 V F GE vj Forward voltage I = 6 A, V = 0 V T = 125C V 1,55 V F GE vj F IF = 6 A, VGE = 0 V Tvj = 150C 1,50 V Rckstromspitze I = 6 A, - di /dt = 800 A/s (T =150C) T = 25C 10,5 A F F vj vj Peak reverse recovery current V = 300 V T = 125C I 11,5 A R vj RM VGE = -15 V Tvj = 150C 12,0 A Sperrverzgerungsladung I = 6 A, - di /dt = 800 A/s (T =150C) T = 25C 0,35 C F F vj vj Recovered charge V = 300 V T = 125C Q 0,60 C R vj r VGE = -15 V Tvj = 150C 0,70 C Abschaltenergie pro Puls I = 6 A, - di /dt = 800 A/s (T =150C) T = 25C 0,065 mJ F F vj vj Reverse recovery energy V = 300 V T = 125C E 0,12 mJ R vj rec VGE = -15 V Tvj = 150C 0,16 mJ Wrmewiderstand, Chip bis Gehuse pro Diode / per diode RthJC 4,50 5,00 K/W Thermal resistance, junction to case Wrmewiderstand, Gehuse bis Khlkrper pro Diode / per diode R 2,10 K/W thCH Thermal resistance, case to heatsink = 1 W/(mK) / = 1 W/(mK) Paste grease NTC-Widerstand / NTC-Thermistor Charakteristische Werte / Characteristic Values min. typ. max. Nennwiderstand TC = 25C R25 5,00 k Rated resistance Abweichung von R100 T = 100C, R = 493 R/R -5 5 % C 100 Deviation of R100 Verlustleistung TC = 25C P25 20,0 mW Power dissipation B-Wert R = R exp B (1/T - 1/(298,15 K)) B 3375 K 2 25 25/50 2 25/50 B-value B-Wert R = R exp B (1/T - 1/(298,15 K)) B t.b.d. K 2 25 25/80 2 25/80 B-value B-Wert R = R exp B (1/T - 1/(298,15 K)) B t.b.d. K 2 25 25/100 2 25/100 B-value Angaben gem gltiger Application Note. Specification according to the valid application note. prepared by: DPK date of publication: 2013-03-01 approved by: RK revision: 2.0 2