Technische Information / Technical Information IGBT-Module FS75R06KE3 IGBT-modules EconoPACK mit schnellem Trench/Feldstop IGBT und Emitter Controlled3 Diode EconoPACK with fast trench/fieldstop IGBT and Emitter Controlled3 diode Vorlufige Daten IGBT,Wechselrichter / IGBT,Inverter Preliminary Data Hchstzulssige Werte / Maximum Rated Values Kollektor-Emitter-Sperrspannung T = 25C V 600 V vj CES Collector-emitter voltage Kollektor-Dauergleichstrom T = 70C, T = 175C I 75 A C vj max C nom Continuous DC collector current Periodischer Kollektor-Spitzenstrom t = 1 ms I 150 A P CRM Repetitive peak collector current Gesamt-Verlustleistung T = 25C, T = 175 P 250 W C vj max tot Total power dissipation Gate-Emitter-Spitzenspannung VGES +/-20 V Gate-emitter peak voltage Charakteristische Werte / Characteristic Values min. typ. max. Kollektor-Emitter-Sttigungsspannung I = 75 A, V = 15 V T = 25C 1,45 1,90 V C GE vj Collector-emitter saturation voltage I = 75 A, V = 15 V T = 125C V 1,60 V C GE vj CE sat I = 75 A, V = 15 V T = 150C 1,70 V C GE vj Gate-Schwellenspannung I = 1,20 mA, V = V , T = 25C V 4,9 5,8 6,5 V C CE GE vj GEth Gate threshold voltage Gateladung VGE = -15 V ... +15 V QG 0,80 C Gate charge Interner Gatewiderstand T = 25C R 0,0 vj Gint Internal gate resistor Eingangskapazitt f = 1 MHz, Tvj = 25C, VCE = 25 V, VGE = 0 V Cies 4,60 nF Input capacitance Rckwirkungskapazitt f = 1 MHz, T = 25C, V = 25 V, V = 0 V C 0,145 nF vj CE GE res Reverse transfer capacitance Kollektor-Emitter-Reststrom VCE = 600 V, VGE = 0 V, Tvj = 25C ICES 1,0 mA Collector-emitter cut-off current Gate-Emitter-Reststrom V = 0 V, V = 20 V, T = 25C I 400 nA CE GE vj GES Gate-emitter leakage current Einschaltverzgerungszeit, induktive Last I = 75 A, V = 300 V T = 25C 0,025 s C CE vj t d on Turn-on delay time, inductive load VGE = 15 V Tvj = 125C 0,025 s R = 5,1 T = 150C 0,025 s Gon vj Anstiegszeit, induktive Last I = 75 A, V = 300 V T = 25C 0,02 s C CE vj t r Rise time, inductive load VGE = 15 V Tvj = 125C 0,02 s R = 5,1 T = 150C 0,02 s Gon vj Abschaltverzgerungszeit, induktive Last I = 75 A, V = 300 V T = 25C 0,21 s C CE vj t d off Turn-off delay time, inductive load VGE = 15 V Tvj = 125C 0,24 s R = 5,1 T = 150C 0,25 s Goff vj Fallzeit, induktive Last I = 75 A, V = 300 V T = 25C 0,06 s C CE vj t f Fall time, inductive load VGE = 15 V Tvj = 125C 0,07 s R = 5,1 T = 150C 0,07 s Goff vj Einschaltverlustenergie pro Puls I = 75 A, V = 300 V, L = 30 nH T = 25C 0,35 mJ C CE S vj Turn-on energy loss per pulse VGE = 15 V, di/dt = 4000 A/s (Tvj = 150C) Tvj = 125C Eon 0,50 mJ R = 5,1 T = 150C 0,60 mJ Gon vj Abschaltverlustenergie pro Puls I = 75 A, V = 300 V, L = 30 nH T = 25C 2,40 mJ C CE S vj Turn-off energy loss per pulse VGE = 15 V, du/dt = 4000 V/s (Tvj = 150C)Tvj = 125C Eoff 2,80 mJ R = 5,1 T = 150C 3,00 mJ Goff vj Kurzschluverhalten V 15 V, V = 360 V t 8 s, T = 25C 530 A GE CC P vj ISC SC data VCEmax = VCES -LsCE di/dt tP 6 s, Tvj = 150C 380 A Wrmewiderstand, Chip bis Gehuse pro IGBT / per IGBT R 0,60 K/W thJC Thermal resistance, junction to case Wrmewiderstand, Gehuse bis Khlkrper pro IGBT / per IGBT R 0,20 K/W thCH Thermal resistance, case to heatsink Paste = 1 W/(mK) / grease = 1 W/(mK) Temperatur im Schaltbetrieb T -40 150 C vj op Temperature under switching conditions prepared by: CM date of publication: 2013-10-03 approved by: RS revision: 2.0 1Technische Information / Technical Information IGBT-Module FS75R06KE3 IGBT-modules Vorlufige Daten Preliminary Data Diode, Wechselrichter / Diode, Inverter Hchstzulssige Werte / Maximum Rated Values Periodische Spitzensperrspannung T = 25C V 600 V vj RRM Repetitive peak reverse voltage Dauergleichstrom I 75 A F Continuous DC forward current Periodischer Spitzenstrom t = 1 ms I 150 A P FRM Repetitive peak forward current Grenzlastintegral V = 0 V, t = 10 ms, T = 125C 660 As R P vj It It - value VR = 0 V, tP = 10 ms, Tvj = 150C 610 As Charakteristische Werte / Characteristic Values min. typ. max. Durchlassspannung I = 75 A, V = 0 V T = 25C 1,55 1,95 V F GE vj Forward voltage I = 75 A, V = 0 V T = 125C V 1,50 V F GE vj F IF = 75 A, VGE = 0 V Tvj = 150C 1,45 V Rckstromspitze I = 75 A, - di /dt = 4000 A/s (T =150C) T = 25C 100 A F F vj vj Peak reverse recovery current V = 300 V T = 125C I 115 A R vj RM VGE = -15 V Tvj = 150C 125 A Sperrverzgerungsladung I = 75 A, - di /dt = 4000 A/s (T =150C) T = 25C 3,00 C F F vj vj Recovered charge V = 300 V T = 125C Q 6,00 C R vj r VGE = -15 V Tvj = 150C 7,50 C Abschaltenergie pro Puls I = 75 A, - di /dt = 4000 A/s (T =150C) T = 25C 0,95 mJ F F vj vj Reverse recovery energy V = 300 V T = 125C E 1,50 mJ R vj rec VGE = -15 V Tvj = 150C 1,85 mJ Wrmewiderstand, Chip bis Gehuse pro Diode / per diode RthJC 0,95 K/W Thermal resistance, junction to case Wrmewiderstand, Gehuse bis Khlkrper pro Diode / per diode R 0,30 K/W thCH Thermal resistance, case to heatsink = 1 W/(mK) / = 1 W/(mK) Paste grease Temperatur im Schaltbetrieb Tvj op -40 150 C Temperature under switching conditions NTC-Widerstand / NTC-Thermistor Charakteristische Werte / Characteristic Values min. typ. max. Nennwiderstand T = 25C R 5,00 k C 25 Rated resistance Abweichung von R100 TC = 100C, R100 = 493 R/R -5 5 % Deviation of R100 Verlustleistung T = 25C P 20,0 mW C 25 Power dissipation B-Wert R = R exp B (1/T - 1/(298,15 K)) B 3375 K 2 25 25/50 2 25/50 B-value B-Wert R = R exp B (1/T - 1/(298,15 K)) B t.b.d. K 2 25 25/80 2 25/80 B-value B-Wert R = R exp B (1/T - 1/(298,15 K)) B t.b.d. K 2 25 25/100 2 25/100 B-value Angaben gem gltiger Application Note. Specification according to the valid application note. prepared by: CM date of publication: 2013-10-03 approved by: RS revision: 2.0 2