/ Technical Information IGBT- FS75R07U1E4 IGBT-modules SmartPACK1 /IGBT4 pressfitNTC SmartPACK1 module with trench/fieldstop IGBT4 and Emitter Controlled Diode and PressFIT / NTC J VCES = 650V I = 75A / I = 150A C nom CRM Typical Applications Air Conditioning Motor Drives Servo Drives UPS UPS Systems Electrical Features 650V Increased blocking voltage capability to 650V High Short Circuit Capability, Self Limiting Short Circuit Current IGBT4 Trench IGBT 4 T = 150C T = 150C vj op vj op Mechanical Features Al 2O3 Al2O 3 Substrate with Low Thermal Resistance Compact design PressFIT PressFIT Contact Technology Rugged Duplex frame construction Module Label Code Barcode Code 128 Content of the Code Digit Module Serial Number 1 - 5 Module Material Number 6 - 11 Production Order Number 12 - 19 DMX - Code Datecode (Production Year) 20 - 21 Datecode (Production Week) 22 - 23 prepared by: NK date of publication: 2013-11-11 approved by: MB revision: 3.0 UL approved (E83335) 1 / Technical Information IGBT- FS75R07U1E4 IGBT-modules IGBT, / IGBT,Inverter / Maximum Rated Values T = 25C V 650 V vj CES Collector-emitter voltage T = 80C, T = 175C I 75 A C vj max C nom Continuous DC collector current TC = 25C, Tvj max = 175C IC 100 A t = 1 ms I 150 A P CRM Repetitive peak collector current T = 25C, T = 175C P 275 W C vj max tot Total power dissipation VGES +/-20 V Gate-emitter peak voltage / Characteristic Values min. typ. max. I = 75 A, V = 15 V T = 25C 1,55 1,95 V C GE vj Collector-emitter saturation voltage I = 75 A, V = 15 V T = 125C V 1,70 V C GE vj CE sat I = 75 A, V = 15 V T = 150C 1,75 V C GE vj I = 1,20 mA, V = V , T = 25C V 5,0 5,8 6,5 V C CE GE vj GEth Gate threshold voltage VGE = -15 V ... +15 V QG 0,75 C Gate charge T = 25C R 0,0 vj Gint Internal gate resistor f = 1 MHz, Tvj = 25C, VCE = 25 V, VGE = 0 V Cies 4,60 nF Input capacitance f = 1 MHz, T = 25C, V = 25 V, V = 0 V C 0,145 nF vj CE GE res Reverse transfer capacitance - VCE = 650 V, VGE = 0 V, Tvj = 25C ICES 1,0 mA Collector-emitter cut-off current - V = 0 V, V = 20 V, T = 25C I 100 nA CE GE vj GES Gate-emitter leakage current () I = 75 A, V = 300 V T = 25C 0,016 s C CE vj t d on Turn-on delay time, inductive load VGE = 15 V Tvj = 125C 0,016 s R = 5,1 T = 150C 0,017 s Gon vj () I = 75 A, V = 300 V T = 25C 0,023 s C CE vj t r Rise time, inductive load VGE = 15 V Tvj = 125C 0,025 s R = 5,1 T = 150C 0,026 s Gon vj () I = 75 A, V = 300 V T = 25C 0,19 s C CE vj t d off Turn-off delay time, inductive load VGE = 15 V Tvj = 125C 0,235 s R = 5,1 T = 150C 0,235 s Goff vj () I = 75 A, V = 300 V T = 25C 0,056 s C CE vj t f Fall time, inductive load VGE = 15 V Tvj = 125C 0,066 s R = 5,1 T = 150C 0,067 s Goff vj () I = 75 A, V = 300 V, L = 35 nH T = 25C 0,65 mJ C CE S vj Turn-on energy loss per pulse VGE = 15 V, di/dt = 3000 A/s (Tvj = 150C) Tvj = 125C Eon 0,95 mJ R = 5,1 T = 150C 1,05 mJ Gon vj ( I = 75 A, V = 300 V, L = 35 nH T = 25C 2,45 mJ C CE S vj Turn-off energy loss per pulse VGE = 15 V, du/dt = 3500 V/s (Tvj = 150C)Tvj = 125C Eoff 3,05 mJ R = 5,1 T = 150C 3,15 mJ Goff vj V 15 V, V = 360 V t 10 s, T = 25C 360 A GE CC P vj ISC SC data VCEmax = VCES -LsCE di/dt tP 10 s, Tvj = 150C 290 A IGBT / per IGBT R 0,50 0,55 K/W thJC Thermal resistance, junction to case IGBT / per IGBT R 0,45 K/W thCH Thermal resistance, case to heatsink Paste = 1 W/(mK) / grease = 1 W/(mK) T -40 150 C vj op Temperature under switching conditions prepared by: NK date of publication: 2013-11-11 approved by: MB revision: 3.0 2