FS75R12W2T7 B11 EasyPACK TRENCHSTOPIGBT7 PressFIT / NTC EasyPACK module with TRENCHSTOPIGBT7 and Emitter Controlled 7 diode and PressFIT / NTC / Preliminary Data J V = 1200V CES I = 75A / I = 150A C nom CRM Potential Applications UPS UPS systems Servo drives Motor drives Air conditioning Auxiliary inverters Electrical Features TM IGBT 7 Trenchstop IGBT7 V Low V CEsat CEsat 175 c Overload operation up to 175C Mechanical Features 2.5 kV AC 1 2.5 kV AC 1min insulation PressFIT PressFIT contact technology Compact design Al 2O3DCB Al2O 3 substrate with low thermal resistance High power density Module Label Code Barcode Code 128 Content of the Code Digit Module Serial Number 1 - 5 Module Material Number 6 - 11 Production Order Number 12 - 19 DMX - Code Datecode (Production Year) 20 - 21 Datecode (Production Week) 22 - 23 Datasheet Please read the Important Notice and Warnings at the end of this document V 2.0 www.infineon.com 2019-12-13FS75R12W2T7 B11 Preliminary Data IGBT- / IGBT,Inverter / Maximum Rated Values T = 25C V 1200 V vj CES Collector-emitter voltage ICN 75 A Implemented collector current DC T = 65C, T = 175C I 65 A H vj max CDC Continuous DC collector current tP = 1 ms ICRM 150 A Repetitive peak collector current V +/-20 V GES Gate-emitter peak voltage / Characteristic Values min. typ. max. I = 75 A T = 25C 1,55 t.b.d. V C vj Collector-emitter saturation voltage VGE = 15 V Tvj = 125C VCE sat 1,69 V T = 175C 1,77 V vj I = 1,70 mA, V = V , T = 25C V 5,15 5,80 6,45 V C CE GE vj GEth Gate threshold voltage VGE = -15 / 15 V, VCE = 600 V QG 1,25 C Gate charge T = 25C R 2,0 vj Gint Internal gate resistor f = 100 kHz, Tvj = 25C, VCE = 25 V, VGE = 0 V Cies 15,1 nF Input capacitance f = 100 kHz, T = 25C, V = 25 V, V = 0 V C 0,053 nF vj CE GE res Reverse transfer capacitance VCE = 1200 V, VGE = 0 V, Tvj = 25C ICES 0,013 mA Collector-emitter cut-off current V = 0 V, V = 20 V, T = 25C I 100 nA CE GE vj GES Gate-emitter leakage current I = 75 A, V = 600 V T = 25C 0,13 s C CE vj td on Turn-on delay time, inductive load VGE = -15 / 15 V Tvj = 125C 0,15 s R = 2,2 T = 175C 0,158 s Gon vj I = 75 A, V = 600 V T = 25C 0,03 s C CE vj tr Rise time, inductive load V = -15 / 15 V T = 125C 0,038 s GE vj R = 2,2 T = 175C 0,04 s Gon vj I = 75 A, V = 600 V T = 25C 0,27 s C CE vj td off Turn-off delay time, inductive load V = -15 / 15 V T = 125C 0,35 s GE vj R = 2,2 T = 175C 0,39 s Goff vj I = 75 A, V = 600 V T = 25C 0,12 s C CE vj tf Fall time, inductive load V = -15 / 15 V T = 125C 0,21 s GE vj R = 2,2 T = 175C 0,27 s Goff vj I = 75 A, V = 600 V, L = 35 nH T = 25C 4,92 mJ C CE vj Turn-on energy loss per pulse di/dt = 1700 A/s (T = 175C) T = 125C E 7,49 mJ vj vj on V = -15 / 15 V, R = 2,2 T = 175C 8,99 mJ GE Gon vj I = 75 A, V = 600 V, L = 35 nH T = 25C 5,47 mJ C CE vj Turn-off energy loss per pulse du/dt = 3000 V/s (T = 175C) T = 125C E 8,27 mJ vj vj off V = -15 / 15 V, R = 2,2 T = 175C 9,67 mJ GE Goff vj V 15 V, V = 800 V t 8 s, T = 150C 260 A GE CC P vj ISC SC data V = V -L di/dt t 7 s, T = 175C 240 A CEmax CES sCE P vj IGBT / per IGBT R 0,803 K/W thJH Thermal resistance, junction to heatsink Tvj op -40 175 C Temperature under switching conditions Datasheet 2 V 2.0 2019-12-13