Technische Information / Technical Information IGBT-Modul FS800R07A2E3 B31 IGBT-Module HybridPACK2 Modul mit Trench/Feldstopp IGBT3 und Emitter Controlled 3 Diode und NTC HybridPACK2 module with Trench/Fieldstop IGBT3 and Emitter Controlled 3 diode and NTC T T T V = 650V CES IC nom = 800A / ICRM = 1600A Typische Anwendungen Typical Applications Anwendungen im Automobil Automotive Applications Hybrid-Elektrofahrzeuge (H)EV Hybrid Electrical Vehicles (H)EV Hybrid-Nutzfahrzeuge Commercial Agriculture Vehicles Motorantriebe Motor Drives Elektrische Eigenschaften Electrical Features Erhhte Sperrspannungsfestigkeit auf 650V Increased blocking voltage capability to 650V Erweiterte Sperrschichttemperatur T Extended Operation Temperature T vj op vj op Hohe Stromdichte High Current Density Niederinduktives Design Low Inductive Design Niedrige Schaltverluste Low Switching Losses Niedriges V Low V CEsat CEsat T = 150C T = 150C vj op vj op Tvj op = 175C Tvj op = 175C Trench IGBT 3 Trench IGBT 3 V mit positivem Temperaturkoeffizienten V with positive Temperature Coefficient CEsat CEsat Mechanische Eigenschaften Mechanical Features 2,5 kV AC 1min Isolationsfestigkeit 2.5 kV AC 1min Insulation Direkt gekhlte Bodenplatte Direct Cooled Base Plate Hohe Leistungsdichte High Power Density Integrierter NTC Temperatur Sensor Integrated NTC temperature sensor Isolierte Bodenplatte Isolated Base Plate Module Label Code Kupferbodenplatte Copper Base Plate RoHS konform RoHS compliant Barcode Code 128 Content of the Code Digit Module Serial Number 1 - 5 Module Material Number 6 - 11 Production Order Number 12 - 19 DMX - Code Datecode (Production Year) 20 - 21 Datecode (Production Week) 22 - 23 prepared by: WJ date of publication: 2014-06-02 approved by: MM revision: 3.1 1Technische Information / Technical Information IGBT-Modul FS800R07A2E3 B31 IGBT-Module IGBT,Wechselrichter / IGBT,Inverter Hchstzulssige Werte / Maximum Rated Values Kollektor-Emitter-Sperrspannung T = 25C V 650 V vj CES Collector-emitter voltage Implementierter Kollektor-Strom I 800 A CN Implemented collector current Kollektor-Dauergleichstrom TF = 75C, Tvj max = 175C IC nom 550 A Continuous DC collector current T = 25C, T = 175C I 700 A F vj max C Periodischer Kollektor-Spitzenstrom t = 1 ms I 1600 A P CRM Repetitive peak collector current Gesamt-Verlustleistung TF = 25C, Tvj max = 175C Ptot 1550 W Total power dissipation Gate-Emitter-Spitzenspannung V +/-20 V GES Gate-emitter peak voltage Charakteristische Werte / Characteristic Values min. typ. max. Kollektor-Emitter-Sttigungsspannung I = 550 A, V = 15 V T = 25C 1,30 1,50 V C GE vj Collector-emitter saturation voltage I = 550 A, V = 15 V T = 125C V 1,35 V C GE vj CE sat I = 550 A, V = 15 V T = 150C 1,40 V C GE vj Gate-Schwellenspannung IC = 13,0 mA, VCE = VGE, Tvj = 25C VGEth 4,9 5,8 6,5 V Gate threshold voltage Gateladung V = -15 V ... +15 V Q 8,60 C GE G Gate charge Interner Gatewiderstand Tvj = 25C RGint 0,5 Internal gate resistor Eingangskapazitt f = 1 MHz, T = 25C, V = 25 V, V = 0 V C 52,0 nF vj CE GE ies Input capacitance Rckwirkungskapazitt f = 1 MHz, Tvj = 25C, VCE = 25 V, VGE = 0 V Cres 1,50 nF Reverse transfer capacitance Kollektor-Emitter-Reststrom V = 650 V, V = 0 V, T = 25C I 5,0 mA CE GE vj CES Collector-emitter cut-off current Gate-Emitter-Reststrom V = 0 V, V = 20 V, T = 25C I 400 nA CE GE vj GES Gate-emitter leakage current Einschaltverzgerungszeit, induktive Last IC = 550 A, VCE = 300 V Tvj = 25C 0,12 s t d on Turn-on delay time, inductive load V = 15 V T = 125C 0,12 s GE vj RGon = 1,8 Tvj = 150C 0,13 s Anstiegszeit, induktive Last IC = 550 A, VCE = 300 V Tvj = 25C 0,10 s t r Rise time, inductive load V = 15 V T = 125C 0,10 s GE vj RGon = 1,8 Tvj = 150C 0,10 s Abschaltverzgerungszeit, induktive Last IC = 550 A, VCE = 300 V Tvj = 25C 0,51 s t d off Turn-off delay time, inductive load V = 15 V T = 125C 0,53 s GE vj RGoff = 0,75 Tvj = 150C 0,55 s Fallzeit, induktive Last IC = 550 A, VCE = 300 V Tvj = 25C 0,04 s t f Fall time, inductive load V = 15 V T = 125C 0,06 s GE vj RGoff = 0,75 Tvj = 150C 0,07 s Einschaltverlustenergie pro Puls IC = 550 A, VCE = 300 V, LS = 20 nH Tvj = 25C 10,5 mJ Turn-on energy loss per pulse V = 15 V, di/dt = 5500 A/s (T = 150C) T = 125C E 12,0 mJ GE vj vj on RGon = 1,8 Tvj = 150C 12,5 mJ Abschaltverlustenergie pro Puls IC = 550 A, VCE = 300 V, LS = 20 nH Tvj = 25C 21,0 mJ Turn-off energy loss per pulse V = 15 V, du/dt = 2700 V/s (T = 150C)T = 125C E 25,0 mJ GE vj vj off RGoff = 0,75 Tvj = 150C 26,0 mJ Kurzschluverhalten VGE 15 V, VCC = 360 V tP 8 s, Tvj = 25C 5600 A I SC SC data V = V -L di/dt t 6 s, T = 150C 4000 A CEmax CES sCE P vj Wrmewiderstand, Chip bis Khl-Flssigkeit pro IGBT / per IGBT Thermal resistance, junction to cooling fluid cooling fluid = 50% water/50% ethylenglycol V/t = RthJF 0,097 K/W 10,0 dm/min Temperatur im Schaltbetrieb T -40 150 C vj op Temperature under switching conditions prepared by: WJ date of publication: 2014-06-02 approved by: MM revision: 3.1 2