X-On Electronics has gained recognition as a prominent supplier of FT150R12KE3_B5 IGBT Modules across the USA, India, Europe, Australia, and various other global locations. FT150R12KE3_B5 IGBT Modules are a product manufactured by Infineon. We provide cost-effective solutions for IGBT Modules, ensuring timely deliveries around the world.

FT150R12KE3_B5 Infineon

FT150R12KE3_B5 electronic component of Infineon
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Part No.FT150R12KE3_B5
Manufacturer: Infineon
Category: IGBT Modules
Description: Infineon Technologies IGBT Modules N-CH 1.2KV 200A
Datasheet: FT150R12KE3_B5 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



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MOQ : 1
Multiples : 1
1 : USD 161.2219
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Obsolete
   
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Collector- Emitter Voltage VCEO Max
Continuous Collector Current at 25 C
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We are delighted to provide the FT150R12KE3_B5 from our IGBT Modules category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the FT150R12KE3_B5 and other electronic components in the IGBT Modules category and beyond.

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Technische Information / technical information IGBT-Module FT150R12KE3 B5 IGBT-modules Vorlufige Daten preliminary data IGBT-Wechselrichter / IGBT-inverter Hchstzulssige Werte / maximum rated values %& ( )* +,-. + / %, ( 0 * 1, 234 ) 5 / %, ( )* 1, 5 6 7 8 ( 9 %, ( 0 * 1,: 5 < + %, ( )* 6>3> = < 7 + -. A + Charakteristische Werte / characteristic values B C 1, ( ) 59 + - ( ) +9 %& ( )* +,- DE> 9 9 ) + 1, ( ) 59 + - ( ) +9 %& ( )* 9 + < = 1, ( F9 59 +,- ( + -9 %& ( )* + ->G )9 )90 F9) + < + - ( ) + ) + H 9I J 1 < = %& ( )* K2> )9 L 7 C ( MN79 %& ( )* 9 +,- ( ) +9 + - ( + KOD 9) P Q = 7 C ( MN79 %& ( )* 9 +,- ( ) +9 + - ( + ROD 9I P +,- ( +9 + - ( +9 %& ( )* 1,-. )9 5 < +,- ( +9 + - ( +9 %& ( )* 1 -. I 5 7S 7 T U V 1, ( ) 59 +,- ( F + T V + - ( W ) +9 32 ( 9I L9 %& ( )* X 32 9 0 J + - ( W ) +9 32 ( 9I L9 %& ( )* 9 J 5 7 T U V 1, ( ) 59 +,- ( F + T V + - ( W ) +9 32 ( 9I L9 %& ( )* R 9 I J + - ( W ) +9 32 ( 9I L9 %& ( )* 9 ) J 5 7S 7 T U V 1, ( ) 59 +,- ( F + T V + - ( W ) +9 3YY ( 9I L9 %& ( )* X 3YY 9) J + - ( W ) +9 3YY ( 9I L9 %& ( )* 9F) J P 7 T U V 1, ( ) 59 +,- ( F + T V + - ( W ) +9 3YY ( 9I L9 %& ( )* Y 9 J + - ( W ) +9 3YY ( 9I L9 %& ( )* 9 J 6 1, ( ) 59 +,- ( F +9 U. ( N + - ( W ) +9 32 ( 9I L9 %& ( )* 32 F9) Z + - ( W ) +9 32 ( 9I L9 %& ( )* 9 Z 5 6 1, ( ) 59 +,- ( F +9 U. ( N + - ( W ) +9 3YY ( 9I L9 %& ( )* 3YY I9 Z + - ( W ) +9 3YY ( 9I L9 %& ( )* 9 Z 7 8 J 9 + - ) + 1., F 5 %& )* 9 +,, ( +9 +,-4E ( +,-. UD,- A 1 C = 1<a% >Gb, 9 0 A 9 1<a% 1Technische Information / technical information IGBT-Module FT150R12KE3 B5 IGBT-modules Vorlufige Daten preliminary data Diode-Wechselrichter / diode-inverter Hchstzulssige Werte / maximum rated values 6 7 %& ( )* +:: + / 1c ) 5 / = 6 7 8 ( 1c: 5 = < 7 +: ( +9 8 ( 9 %& ( )* 1d I)) 5d 1d Charakteristische Werte / characteristic values B / 1c ( ) 59 + - ( +9 %& ( )* +c 9F) 9 ) + = 1c ( ) 59 + - ( +9 %& ( )* 9F) + Q 7 1c ( ) 59 cA ( I 5AJ +: ( F +9 + - ( ) +9 %& ( )* 1: 5 +: ( F +9 + - ( ) +9 %& ( )* 5 7S 1c ( ) 59 cA ( I 5AJ +: ( F +9 + - ( ) +9 %& ( )* HR 9 J +: ( F +9 + - ( ) +9 %& ( )* 9 J 5 6 1c ( ) 59 cA ( I 5AJ +: ( F +9 + - ( ) +9 %& ( )* ROe 9 Z +: ( F +9 + - ( ) +9 %& ( )* 9 Z 1 C = / >Gb, 9 I A 9 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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