/ Technical Information IGBT- FZ1200R12HE4 IGBT-Module IHM-B /IGBT4 IHM-B module with Trench/Fieldstop IGBT4 and Emitter Controlled 4 diode / Preliminary Data V = 1200V CES I = 1200A / I = 2400A C nom CRM Typical Applications High power converters Motor drives Electrical Features T Extended operating temperature T vj op vj op Low switching losses Mechanical Features CTI > 400 Package with CTI > 400 High power density IHM B IHM B housing Module Label Code Barcode Code 128 Content of the Code Digit Module Serial Number 1 - 5 Module Material Number 6 - 11 Production Order Number 12 - 19 DMX - Code Datecode (Production Year) 20 - 21 Datecode (Production Week) 22 - 23 prepared by: WB date of publication: 2015-09-29 approved by: IB revision: V2.4 UL approved (E83335) 1 / Technical Information IGBT- FZ1200R12HE4 IGBT-Module Preliminary Data IGBT, / IGBT,Inverter / Maximum Rated Values T = 25C V 1200 V vj CES Collector-emitter voltage T = 100C, T = 175C I 1200 A C vj max C nom Continuous DC collector current TC = 25C, Tvj max = 175C IC 1825 A t = 1 ms I 2400 A P CRM Repetitive peak collector current T = 25C, T = 175C P 7,15 kW C vj max tot Total power dissipation VGES +/-20 V Gate-emitter peak voltage / Characteristic Values min. typ. max. I = 1200 A, V = 15 V T = 25C 1,75 2,10 V C GE vj Collector-emitter saturation voltage I = 1200 A, V = 15 V T = 125C V 2,00 V C GE vj CE sat I = 1200 A, V = 15 V T = 150C 2,05 V C GE vj I = 45,5 mA, V = V , T = 25C V 5,20 5,80 6,40 V C CE GE vj GEth Gate threshold voltage VGE = -15 V ... +15 V QG 9,25 C Gate charge T = 25C R 1,6 vj Gint Internal gate resistor f = 1 MHz, Tvj = 25C, VCE = 25 V, VGE = 0 V Cies 74,0 nF Input capacitance f = 1 MHz, T = 25C, V = 25 V, V = 0 V C 4,10 nF vj CE GE res Reverse transfer capacitance - VCE = 1200 V, VGE = 0 V, Tvj = 25C ICES 5,0 mA Collector-emitter cut-off current - V = 0 V, V = 20 V, T = 25C I 400 nA CE GE vj GES Gate-emitter leakage current () I = 1200 A, V = 600 V T = 25C 0,41 s C CE vj t d on Turn-on delay time, inductive load VGE = 15 V Tvj = 125C 0,46 s R = 1,6 T = 150C 0,46 s Gon vj () I = 1200 A, V = 600 V T = 25C 0,20 s C CE vj t r Rise time, inductive load VGE = 15 V Tvj = 125C 0,20 s R = 1,6 T = 150C 0,20 s Gon vj () I = 1200 A, V = 600 V T = 25C 0,82 s C CE vj t d off Turn-off delay time, inductive load VGE = 15 V Tvj = 125C 0,93 s R = 0,62 T = 150C 0,96 s Goff vj () I = 1200 A, V = 600 V T = 25C 0,11 s C CE vj t f Fall time, inductive load VGE = 15 V Tvj = 125C 0,14 s R = 0,62 T = 150C 0,17 s Goff vj () I = 1200 A, V = 600 V, L = 54 nH T = 25C 115 mJ C CE S vj Turn-on energy loss per pulse VGE = 15 V, di/dt = 5900 A/s (Tvj = 150C) Tvj = 125C Eon 155 mJ R = 1,6 T = 150C 175 mJ Gon vj ( I = 1200 A, V = 600 V, L = 54 nH T = 25C 145 mJ C CE S vj Turn-off energy loss per pulse VGE = 15 V, du/dt = 2750 V/s (Tvj = 150C)Tvj = 125C Eoff 180 mJ R = 0,62 T = 150C 195 mJ Goff vj V 15 V, V = 800 V GE CC ISC SC data VCEmax = VCES -LsCE di/dt tP 10 s, Tvj = 150C 4800 A IGBT / per IGBT R 21,0 K/kW thJC Thermal resistance, junction to case IGBT / per IGBT R 13,5 K/kW thCH Thermal resistance, case to heatsink Paste = 1 W/(mK) / grease = 1 W/(mK) T -40 150 C vj op Temperature under switching conditions prepared by: WB date of publication: 2015-09-29 approved by: IB revision: V2.4 2