/ Technical Information IGBT- FZ1200R17HE4 IGBT-Module IHM-B IHM-B module / Preliminary Data V = 1700V CES I = 1200A / I = 2400A C nom CRM Typical Applications High power converters Motor drives Electrical Features T Extended operating temperature T vj op vj op Low switching losses VCEsat Low VCEsat T = 150C T = 150C vj op vj op Mechanical Features 4 kV 1 4 kV AC 1min insulation CTI > 400 Package with CTI > 400 High creepage and clearance distances High power density IHM B IHM B housing Copper base plate Module Label Code Barcode Code 128 Content of the Code Digit Module Serial Number 1 - 5 Module Material Number 6 - 11 Production Order Number 12 - 19 DMX - Code Datecode (Production Year) 20 - 21 Datecode (Production Week) 22 - 23 prepared by: WB date of publication: 2015-09-29 approved by: IB revision: V2.4 UL approved (E83335) 1 / Technical Information IGBT- FZ1200R17HE4 IGBT-Module Preliminary Data IGBT, / IGBT,Inverter / Maximum Rated Values T = 25C V 1700 V vj CES Collector-emitter voltage T = 100C, T = 175C I 1200 A C vj max C nom Continuous DC collector current t = 1 ms I 2400 A P CRM Repetitive peak collector current T = 25C, T = 175C P 7,80 kW C vj max tot Total power dissipation VGES +/-20 V Gate-emitter peak voltage / Characteristic Values min. typ. max. I = 1200 A, V = 15 V T = 25C 1,95 2,30 V C GE vj Collector-emitter saturation voltage I = 1200 A, V = 15 V T = 125C V 2,35 V C GE vj CE sat I = 1200 A, V = 15 V T = 150C 2,45 V C GE vj I = 48,0 mA, V = V , T = 25C V 5,20 5,80 6,40 V C CE GE vj GEth Gate threshold voltage VGE = -15 V ... +15 V QG 12,5 C Gate charge T = 25C R 1,6 vj Gint Internal gate resistor f = 1 MHz, Tvj = 25C, VCE = 25 V, VGE = 0 V Cies 97,0 nF Input capacitance f = 1 MHz, T = 25C, V = 25 V, V = 0 V C 3,15 nF vj CE GE res Reverse transfer capacitance - VCE = 1700 V, VGE = 0 V, Tvj = 25C ICES 5,0 mA Collector-emitter cut-off current - V = 0 V, V = 20 V, T = 25C I 400 nA CE GE vj GES Gate-emitter leakage current () I = 1200 A, V = 900 V T = 25C 0,68 s C CE vj t d on Turn-on delay time, inductive load VGE = 15 V Tvj = 125C 0,79 s R = 0,68 T = 150C 0,81 s Gon vj () I = 1200 A, V = 900 V T = 25C 0,14 s C CE vj t r Rise time, inductive load VGE = 15 V Tvj = 125C 0,145 s R = 0,68 T = 150C 0,145 s Gon vj () I = 1200 A, V = 900 V T = 25C 1,10 s C CE vj t d off Turn-off delay time, inductive load VGE = 15 V Tvj = 125C 1,20 s R = 1,0 T = 150C 1,25 s Goff vj () I = 1200 A, V = 900 V T = 25C 0,18 s C CE vj t f Fall time, inductive load VGE = 15 V Tvj = 125C 0,43 s R = 1,0 T = 150C 0,51 s Goff vj () I = 1200 A, V = 900 V, L = 50 nH T = 25C 280 mJ C CE S vj Turn-on energy loss per pulse VGE = 15 V, di/dt = 9000 A/s (Tvj = 150C) Tvj = 125C Eon 370 mJ R = 0,68 T = 150C 400 mJ Gon vj ( I = 1200 A, V = 900 V, L = 50 nH T = 25C 240 mJ C CE S vj Turn-off energy loss per pulse VGE = 15 V, du/dt = 2950 V/s (Tvj = 150C)Tvj = 125C Eoff 380 mJ R = 1,0 T = 150C 420 mJ Goff vj V 15 V, V = 1000 V GE CC ISC SC data VCEmax = VCES -LsCE di/dt tP 10 s, Tvj = 150C 5500 A IGBT / per IGBT R 19,2 K/kW thJC Thermal resistance, junction to case IGBT / per IGBT R 10,2 K/kW thCH Thermal resistance, case to heatsink Paste = 1 W/(mK) / grease = 1 W/(mK) T -40 150 C vj op Temperature under switching conditions prepared by: WB date of publication: 2015-09-29 approved by: IB revision: V2.4 2