/ Technical Information IGBT- FZ1200R17HP4 IGBT-modules IHM-B IGBT IHM-B module with soft-switching Trench-IGBT4 / Preliminary Data V = 1700V CES I = 1200A / I = 2400A C nom CRM Typical Applications High Power Converters Motor Drives Electrical Features T Extended Operation Temperature T vj op vj op V Low V CEsat CEsat Tvj op = 150C Tvj op = 150C Mechanical Features 4 kV 1 4 kV AC 1min Insulation CTI > 400 Package with CTI > 400 High Creepage and Clearance Distances High Power Density IHM B IHM B Housing Copper Base Plate Module Label Code Barcode Code 128 Content of the Code Digit Module Serial Number 1 - 5 Module Material Number 6 - 11 Production Order Number 12 - 19 DMX - Code Datecode (Production Year) 20 - 21 Datecode (Production Week) 22 - 23 prepared by: WB date of publication: 2013-03-09 approved by: PL revision: 2.2 UL approved (E83335) 1 / Technical Information IGBT- FZ1200R17HP4 IGBT-modules Preliminary Data IGBT, / IGBT,Inverter / Maximum Rated Values T = 25C V 1700 V vj CES Collector-emitter voltage T = 100C, T = 175C I 1200 A C vj C nom Continuous DC collector current t = 1 ms I 2400 A P CRM Repetitive peak collector current T = 25C, T = 175C P 7,80 kW C vj tot Total power dissipation VGES +/-20 V Gate-emitter peak voltage / Characteristic Values min. typ. max. I = 1200 A, V = 15 V T = 25C 1,90 2,25 V C GE vj Collector-emitter saturation voltage I = 1200 A, V = 15 V T = 125C V 2,30 V C GE vj CE sat I = 1200 A, V = 15 V T = 150C 2,40 V C GE vj I = 48,0 mA, V = V , T = 25C V 5,2 5,8 6,4 V C CE GE vj GEth Gate threshold voltage VGE = -15 V ... +15 V QG 12,5 C Gate charge T = 25C R 1,6 vj Gint Internal gate resistor f = 1 MHz, Tvj = 25C, VCE = 25 V, VGE = 0 V Cies 97,0 nF Input capacitance f = 1 MHz, T = 25C, V = 25 V, V = 0 V C 3,20 nF vj CE GE res Reverse transfer capacitance - VCE = 1700 V, VGE = 0 V, Tvj = 25C ICES 5,0 mA Collector-emitter cut-off current - V = 0 V, V = 20 V, T = 25C I 400 nA CE GE vj GES Gate-emitter leakage current () I = 1200 A, V = 900 V T = 25C 0,76 s C CE vj t d on Turn-on delay time, inductive load VGE = 15 V Tvj = 125C 0,79 s R = 0,62 T = 150C 0,82 s Gon vj () I = 1200 A, V = 900 V T = 25C 0,13 s C CE vj t r Rise time, inductive load VGE = 15 V Tvj = 125C 0,14 s R = 0,62 T = 150C 0,14 s Gon vj () I = 1200 A, V = 900 V T = 25C 1,10 s C CE vj t d off Turn-off delay time, inductive load VGE = 15 V Tvj = 125C 1,20 s R = 0,8 T = 150C 1,25 s Goff vj () I = 1200 A, V = 900 V T = 25C 0,35 s C CE vj t f Fall time, inductive load VGE = 15 V Tvj = 125C 0,52 s R = 0,8 T = 150C 0,56 s Goff vj () I = 1200 A, V = 900 V, L = 50 nH T = 25C 265 mJ C CE S vj Turn-on energy loss per pulse VGE = 15 V, di/dt = 8750 A/s (Tvj=150C) Tvj = 125C Eon 365 mJ R = 0,62 T = 150C 375 mJ Gon vj ( I = 1200 A, V = 900 V, L = 50 nH T = 25C 320 mJ C CE S vj Turn-off energy loss per pulse VGE = 15 V, du/dt = 3200 V/s (Tvj=150C) Tvj = 125C Eoff 415 mJ R = 0,8 T = 150C 440 mJ Goff vj V 15 V, V = 1000 V GE CC ISC SC data VCEmax = VCES -LsCE di/dt tP 10 s, Tvj = 150C 5000 A IGBT / per IGBT R 19,0 K/kW thJC Thermal resistance, junction to case IGBT / per IGBT R 10,0 K/kW thCH Thermal resistance, case to heatsink Paste = 1 W/(mK) / grease = 1 W/(mK) prepared by: WB date of publication: 2013-03-09 approved by: PL revision: 2.2 2