X-On Electronics has gained recognition as a prominent supplier of FZ1200R17HP4_B2 IGBT Modules across the USA, India, Europe, Australia, and various other global locations. FZ1200R17HP4_B2 IGBT Modules are a product manufactured by Infineon. We provide cost-effective solutions for IGBT Modules, ensuring timely deliveries around the world.

FZ1200R17HP4_B2 Infineon

FZ1200R17HP4_B2 electronic component of Infineon
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Part No.FZ1200R17HP4_B2
Manufacturer: Infineon
Category: IGBT Modules
Description: Infineon Technologies IGBT Modules IGBT 1700V 1200A
Datasheet: FZ1200R17HP4_B2 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



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1: USD 1103.63 ea
Line Total: USD 1103.63 
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We are delighted to provide the FZ1200R17HP4_B2 from our IGBT Modules category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the FZ1200R17HP4_B2 and other electronic components in the IGBT Modules category and beyond.

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Technische Information / Technical Information IGBT-Modul FZ1200R17HP4 B2 IGBT-Module IHM-B Modul mit Trench/Feldstopp IGBT4 und Emitter Controlled Diode IHM-B module with Trench/Fieldstop IGBT4 and Emitter Controlled diode V = 1700V CES IC nom = 1200A / ICRM = 2400A Typische Anwendungen Typical Applications Anwendungen fr Resonanz Umrichter Resonant inverter applications Hochleistungsumrichter High power converters Traktionsumrichter Traction drives Windgeneratoren Wind turbines Elektrische Eigenschaften Electrical Features Erweiterte Sperrschichttemperatur T Extended operating temperature T vj op vj op Niedriges V Low V CEsat CEsat Verstrkte Diode fr Rckspeisebetrieb Enlarged diode for regenerative operation Mechanische Eigenschaften Mechanical Features 4 kV AC 1min Isolationsfestigkeit 4 kV AC 1min insulation AlSiC Bodenplatte fr erhhte thermische AlSiC base plate for increased thermal cycling Lastwechselfestigkeit capability Gehuse mit CTI > 400 Package with CTI > 400 Groe Luft- und Kriechstrecken High creepage and clearance distances Hohe Last- und thermische Wechselfestigkeit High power and thermal cycling capability Hohe Leistungsdichte High power density IHM B Gehuse IHM B housing Module Label Code Barcode Code 128 Content of the Code Digit Module Serial Number 1 - 5 Module Material Number 6 - 11 Production Order Number 12 - 19 DMX - Code Datecode (Production Year) 20 - 21 Datecode (Production Week) 22 - 23 prepared by: WB date of publication: 2016-01-21 approved by: IB revision: V3.1 UL approved (E83335) 1Technische Information / Technical Information IGBT-Modul FZ1200R17HP4 B2 IGBT-Module IGBT,Wechselrichter / IGBT,Inverter Hchstzulssige Werte / Maximum Rated Values Kollektor-Emitter-Sperrspannung T = 25C V 1700 V vj CES Collector-emitter voltage Kollektor-Dauergleichstrom T = 100C, T = 175C I 1200 A C vj max C nom Continuous DC collector current Periodischer Kollektor-Spitzenstrom t = 1 ms I 2400 A P CRM Repetitive peak collector current Gesamt-Verlustleistung T = 25C, T = 175C P 7,80 kW C vj max tot Total power dissipation Gate-Emitter-Spitzenspannung VGES +/-20 V Gate-emitter peak voltage Charakteristische Werte / Characteristic Values min. typ. max. Kollektor-Emitter-Sttigungsspannung I = 1200 A, V = 15 V T = 25C 1,90 2,25 V C GE vj Collector-emitter saturation voltage I = 1200 A, V = 15 V T = 125C V 2,30 V C GE vj CE sat I = 1200 A, V = 15 V T = 150C 2,40 V C GE vj Gate-Schwellenspannung I = 48,0 mA, V = V , T = 25C V 5,20 5,80 6,40 V C CE GE vj GEth Gate threshold voltage Gateladung VGE = -15 V ... +15 V QG 12,5 C Gate charge Interner Gatewiderstand T = 25C R 1,6 vj Gint Internal gate resistor Eingangskapazitt f = 1 MHz, Tvj = 25C, VCE = 25 V, VGE = 0 V Cies 97,0 nF Input capacitance Rckwirkungskapazitt f = 1 MHz, T = 25C, V = 25 V, V = 0 V C 3,20 nF vj CE GE res Reverse transfer capacitance Kollektor-Emitter-Reststrom VCE = 1700 V, VGE = 0 V, Tvj = 25C ICES 5,0 mA Collector-emitter cut-off current Gate-Emitter-Reststrom V = 0 V, V = 20 V, T = 25C I 400 nA CE GE vj GES Gate-emitter leakage current Einschaltverzgerungszeit, induktive Last I = 1200 A, V = 900 V T = 25C 0,68 s C CE vj t d on Turn-on delay time, inductive load VGE = 15 V Tvj = 125C 0,71 s R = 0,2 T = 150C 0,72 s Gon vj Anstiegszeit, induktive Last I = 1200 A, V = 900 V T = 25C 0,12 s C CE vj t r Rise time, inductive load VGE = 15 V Tvj = 125C 0,13 s R = 0,2 T = 150C 0,13 s Gon vj Abschaltverzgerungszeit, induktive Last I = 1200 A, V = 900 V T = 25C 1,10 s C CE vj t d off Turn-off delay time, inductive load VGE = 15 V Tvj = 125C 1,20 s R = 0,8 T = 150C 1,25 s Goff vj Fallzeit, induktive Last I = 1200 A, V = 900 V T = 25C 0,35 s C CE vj t f Fall time, inductive load VGE = 15 V Tvj = 125C 0,52 s R = 0,8 T = 150C 0,56 s Goff vj Einschaltverlustenergie pro Puls I = 1200 A, V = 900 V, L = 50 nH T = 25C 170 mJ C CE S vj Turn-on energy loss per pulse VGE = 15 V, di/dt = 10500 A/s (Tvj = 150C)Tvj = 125C Eon 245 mJ R = 0,2 T = 150C 275 mJ Gon vj Abschaltverlustenergie pro Puls I = 1200 A, V = 900 V, L = 50 nH T = 25C 320 mJ C CE S vj Turn-off energy loss per pulse VGE = 15 V, du/dt = 3200 V/s (Tvj = 150C)Tvj = 125C Eoff 415 mJ R = 0,8 T = 150C 440 mJ Goff vj Kurzschluverhalten V 15 V, V = 1000 V GE CC ISC SC data VCEmax = VCES -LsCE di/dt tP 10 s, Tvj = 150C 5000 A Wrmewiderstand, Chip bis Gehuse pro IGBT / per IGBT R 14,2 K/kW thJC Thermal resistance, junction to case Wrmewiderstand, Gehuse bis Khlkrper pro IGBT / per IGBT R 16,0 K/kW thCH Thermal resistance, case to heatsink Paste = 1 W/(mK) / grease = 1 W/(mK) Temperatur im Schaltbetrieb T -40 150 C vj op Temperature under switching conditions prepared by: WB date of publication: 2016-01-21 approved by: IB revision: V3.1 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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