FZ1200R45HL3 IHM-B Modul mit Trench/Feldstopp IGBT3 und Emitter Controlled 3 Diode IHM-B module with Trench/Fieldstop IGBT3 and Emitter Controlled 3 diode V = 4500V CES I = 1200A / I = 2400A C nom CRM Potentielle Anwendungen Potential Applications Hochleistungsumrichter High power converters Mittelspannungsantriebe Medium voltage converters Motorantriebe Motor drives USV-Systeme UPS systems Windgeneratoren Wind turbines Elektrische Eigenschaften Electrical Features Groe DC-Festigkeit High DC stability Hohe dynamische Robustheit High dynamic robustness Hohe Kurzschlussrobustheit High short-circuit capability Niedriges VCEsat Low VCEsat Trench IGBT 3 Trench IGBT 3 V mit positivem Temperaturkoeffizienten V with positive temperature coefficient CEsat CEsat Mechanische Eigenschaften Mechanical Features AlSiC Bodenplatte fr erhhte thermische AlSiC base plate for increased thermal cycling Lastwechselfestigkeit capability Gehuse mit CTI > 600 Package with CTI > 600 IHM B Gehuse IHM B housing Isolierte Bodenplatte Isolated base plate Standardgehuse Standard housing Module Label Code Barcode Code 128 Content of the Code Digit Module Serial Number 1 - 5 Module Material Number 6 - 11 Production Order Number 12 - 19 DMX - Code Datecode (Production Year) 20 - 21 Datecode (Production Week) 22 - 23 Datasheet Please read the Important Notice and Warnings at the end of this document V 3.3 www.infineon.com 2019-08-23FZ1200R45HL3 IGBT,Wechselrichter / IGBT,Inverter Hchstzulssige Werte / Maximum Rated Values Kollektor-Emitter-Sperrspannung Tvj = -40C 4500 V V CES Collector-emitter voltage T = 150C 4500 vj Kollektor-Dauergleichstrom TC = 95C, Tvj max = 150C ICDC 1200 A Continuous DC collector current Periodischer Kollektor-Spitzenstrom t = 1 ms I 2400 A P CRM Repetitive peak collector current Gate-Emitter-Spitzenspannung VGES +/-20 V Gate-emitter peak voltage Charakteristische Werte / Characteristic Values min. typ. max. Kollektor-Emitter-Sttigungsspannung IC = 1200 A Tvj = 25C 2,35 2,80 V Collector-emitter saturation voltage V = 15 V T = 125C V 2,90 3,45 V GE vj CE sat Tvj = 150C 3,00 3,55 V Gate-Schwellenspannung IC = 105 mA, VCE = VGE, Tvj = 25C VGEth 5,50 6,00 6,50 V Gate threshold voltage Gateladung V = -15 / 15 V Q 33,5 C GE G Gate charge Interner Gatewiderstand Tvj = 25C RGint 0,42 Internal gate resistor Eingangskapazitt f = 1000 kHz, T = 25C, V = 25 V, V = 0 V C 280 nF vj CE GE ies Input capacitance Rckwirkungskapazitt f = 1000 kHz, Tvj = 25C, VCE = 25 V, VGE = 0 V Cres 4,70 nF Reverse transfer capacitance Kollektor-Emitter-Reststrom V = 4500 V, V = 0 V, T = 25C I 5,0 mA CE GE vj CES Collector-emitter cut-off current Gate-Emitter-Reststrom VCE = 0 V, VGE = 20 V, Tvj = 25C IGES 400 nA Gate-emitter leakage current Einschaltverzgerungszeit, induktive Last IC = 1200 A, VCE = 2800 V Tvj = 25C 0,37 s t d on Turn-on delay time, inductive load V = -15 / 15 V T = 125C 0,39 s GE vj R = 1,3 T = 150C 0,40 s Gon vj Anstiegszeit, induktive Last IC = 1200 A, VCE = 2800 V Tvj = 25C 0,23 s t r Rise time, inductive load V = -15 / 15 V T = 125C 0,25 s GE vj R = 1,3 T = 150C 0,26 s Gon vj Abschaltverzgerungszeit, induktive Last I = 1200 A, V = 2800 V T = 25C 5,70 s C CE vj t d off Turn-off delay time, inductive load V = -15 / 15 V T = 125C 6,00 s GE vj R = 5,1 T = 150C 6,10 s Goff vj Fallzeit, induktive Last I = 1200 A, V = 2800 V T = 25C 0,34 s C CE vj t f Fall time, inductive load V = -15 / 15 V T = 125C 0,50 s GE vj R = 5,1 T = 150C 0,57 s Goff vj Einschaltverlustenergie pro Puls I = 1200 A, V = 2800 V, L = 150 nH T = 25C 4000 mJ C CE vj Turn-on energy loss per pulse di/dt = 4800 A/s (T = 150C) T = 125C E 5300 mJ vj vj on V = -15 / 15 V, R = 1,3 T = 150C 6000 mJ GE Gon vj Abschaltverlustenergie pro Puls I = 1200 A, V = 2800 V, L = 150 nH T = 25C 4100 mJ C CE vj Turn-off energy loss per pulse du/dt = 2000 V/s (T = 150C) T = 125C E 5300 mJ vj vj off V = -15 / 15 V, R = 5,1 T = 150C 5700 mJ GE Goff vj Kurzschluverhalten V 15 V, V = 2800 V GE CC I SC SC data V = V -L di/dt t 10 s, T = 125C 6900 A CEmax CES sCE P vj Wrmewiderstand, Chip bis Gehuse pro IGBT / per IGBT RthJC 8,20 K/kW Thermal resistance, junction to case Wrmewiderstand, Gehuse bis Khlkrper pro IGBT / per IGBT R 10,0 K/kW thCH Thermal resistance, case to heatsink = 1 W/(mK) / = 1 W/(mK) Paste grease Temperatur im Schaltbetrieb Tvj op -40 150 C Temperature under switching conditions Datasheet 2 V 3.3 2019-08-23