/ Technical Information IGBT- FZ1800R17HP4 B29 IGBT-Module IHM-B / IGBT4 and diode IHM-B module with Trench/Fieldstop IGBT4 and Emitter Controlled diode V = 1700V CES I = 1800A / I = 3600A C nom CRM Typical Applications Resonant inverter applications High power converters Traction drives Wind turbines Electrical Features T Extended operating temperature T vj op vj op V Low V CEsat CEsat diode Enlarged diode for regenerative operation Mechanical Features 4 kV AC 1 4 kV AC 1min insulation AlSiC AlSiC base plate for increased thermal cycling capability CTI(>400 Package with CTI > 400 / High creepage and clearance distances / High power and thermal cycling capability High power density IHM B IHM B housing Module Label Code Barcode Code 128 Content of the Code Digit Module Serial Number 1 - 5 Module Material Number 6 - 11 Production Order Number 12 - 19 DMX - Code Datecode (Production Year) 20 - 21 Datecode (Production Week) 22 - 23 prepared by: WB date of publication: 2016-01-19 approved by: IB revision: V3.1 UL approved (E83335) 1 / Technical Information IGBT- FZ1800R17HP4 B29 IGBT-Module IGBT- / IGBT,Inverter / Maximum Rated Values T = 25C V 1700 V vj CES Collector-emitter voltage DC T = 100C, T = 175C I 1800 A C vj max C nom Continuous DC collector current t = 1 ms I 3600 A P CRM Repetitive peak collector current T = 25C, T = 175C P 11,5 kW C vj max tot Total power dissipation VGES +/-20 V Gate-emitter peak voltage / Characteristic Values min. typ. max. I = 1800 A, V = 15 V T = 25C 1,90 2,25 V C GE vj Collector-emitter saturation voltage I = 1800 A, V = 15 V T = 125C V 2,30 V C GE vj CE sat I = 1800 A, V = 15 V T = 150C 2,40 V C GE vj I = 72,0 mA, V = V , T = 25C V 5,20 5,80 6,40 V C CE GE vj GEth Gate threshold voltage VGE = -15 V ... +15 V QG 19,0 C Gate charge T = 25C R 1,1 vj Gint Internal gate resistor f = 1 MHz, Tvj = 25C, VCE = 25 V, VGE = 0 V Cies 145 nF Input capacitance f = 1 MHz, T = 25C, V = 25 V, V = 0 V C 4,75 nF vj CE GE res Reverse transfer capacitance VCE = 1700 V, VGE = 0 V, Tvj = 25C ICES 5,0 mA Collector-emitter cut-off current V = 0 V, V = 20 V, T = 25C I 400 nA CE GE vj GES Gate-emitter leakage current I = 1800 A, V = 900 V T = 25C 0,65 s C CE vj t d on Turn-on delay time, inductive load VGE = 15 V Tvj = 125C 0,70 s R = 0,5 T = 150C 0,72 s Gon vj I = 1800 A, V = 900 V T = 25C 0,15 s C CE vj t r Rise time, inductive load VGE = 15 V Tvj = 125C 0,16 s R = 0,5 T = 150C 0,16 s Gon vj I = 1800 A, V = 900 V T = 25C 1,25 s C CE vj t d off Turn-off delay time, inductive load VGE = 15 V Tvj = 125C 1,35 s R = 0,8 T = 150C 1,40 s Goff vj I = 1800 A, V = 900 V T = 25C 0,27 s C CE vj t f Fall time, inductive load VGE = 15 V Tvj = 125C 0,41 s R = 0,8 T = 150C 0,46 s Goff vj I = 1800 A, V = 900 V, L = 50 nH T = 25C 265 mJ C CE S vj Turn-on energy loss per pulse VGE = 15 V, di/dt = 12000 A/s (Tvj = 150C)Tvj = 125C Eon 380 mJ R = 0,5 T = 150C 420 mJ Gon vj I = 1800 A, V = 900 V, L = 50 nH T = 25C 470 mJ C CE S vj Turn-off energy loss per pulse VGE = 15 V, du/dt = 3000 V/s (Tvj = 150C)Tvj = 125C Eoff 620 mJ R = 0,8 T = 150C 660 mJ Goff vj V 15 V, V = 1000 V GE CC ISC SC data VCEmax = VCES -LsCE di/dt tP 10 s, Tvj = 150C 7500 A IGBT / per IGBT R 9,55 K/kW thJC Thermal resistance, junction to case IGBT / per IGBT R 11,0 K/kW thCH Thermal resistance, case to heatsink Paste = 1 W/(mK) / grease = 1 W/(mK) T -40 150 C vj op Temperature under switching conditions prepared by: WB date of publication: 2016-01-19 approved by: IB revision: V3.1 2