FZ2400R12HP4 IHM-B IGBT4 IHM-B module with soft-switching Trench-IGBT4 / Preliminary Data V = 1200V CES I = 2400A / I = 4800A C nom CRM Potential Applications High power converters Motor drives Wind turbines Electrical Features T Extended operating temperature T vj op vj op Mechanical Features 4 kV 1 4 kV AC 1min insulation IHM B IHM B housing CTI > 400 Package with CTI > 400 High power density Module Label Code Barcode Code 128 Content of the Code Digit Module Serial Number 1 - 5 Module Material Number 6 - 11 Production Order Number 12 - 19 DMX - Code Datecode (Production Year) 20 - 21 Datecode (Production Week) 22 - 23 Datasheet Please read the Important Notice and Warnings at the end of this document V 2.3 www.infineon.com 2018-08-07FZ2400R12HP4 Preliminary Data IGBT, / IGBT,Inverter / Maximum Rated Values T = 25C V 1200 V vj CES Collector-emitter voltage T = 95C, T = 175C I 2400 A C vj max CDC Continuous DC collector current TC = 25C, Tvj max = 175C IC 3460 A t = 1 ms I 4800 A P CRM Repetitive peak collector current VGES +/-20 V Gate-emitter peak voltage / Characteristic Values min. typ. max. IC = 2400 A Tvj = 25C 1,70 2,05 V Collector-emitter saturation voltage V = 15 V T = 125C V 2,00 V GE vj CE sat Tvj = 150C 2,10 V IC = 91,2 mA, VCE = VGE, Tvj = 25C VGEth 5,10 5,80 6,50 V Gate threshold voltage V = -15 / 15 V Q 18,5 C GE G Gate charge Tvj = 25C RGint 0,81 Internal gate resistor f = 1000 kHz, T = 25C, V = 25 V, V = 0 V C 150 nF vj CE GE ies Input capacitance f = 1000 kHz, Tvj = 25C, VCE = 25 V, VGE = 0 V Cres 8,30 nF Reverse transfer capacitance - V = 1200 V, V = 0 V, T = 25C I 5,0 mA CE GE vj CES Collector-emitter cut-off current - VCE = 0 V, VGE = 20 V, Tvj = 25C IGES 400 nA Gate-emitter leakage current () IC = 2400 A, VCE = 600 V Tvj = 25C 0,50 s t d on Turn-on delay time, inductive load V = -15 / 15 V T = 125C 0,54 s GE vj R = 1,6 T = 150C 0,55 s Gon vj () IC = 2400 A, VCE = 600 V Tvj = 25C 0,33 s t r Rise time, inductive load V = -15 / 15 V T = 125C 0,33 s GE vj R = 1,6 T = 150C 0,33 s Gon vj () I = 2400 A, V = 600 V T = 25C 1,05 s C CE vj t d off Turn-off delay time, inductive load V = -15 / 15 V T = 125C 1,15 s GE vj R = 0,3 T = 150C 1,20 s Goff vj () I = 2400 A, V = 600 V T = 25C 0,20 s C CE vj t f Fall time, inductive load V = -15 / 15 V T = 125C 0,23 s GE vj R = 0,3 T = 150C 0,24 s Goff vj () I = 2400 A, V = 600 V, L = 54 nH T = 25C 365 mJ C CE vj Turn-on energy loss per pulse di/dt = 6250 A/s (T = 150C) T = 125C E 460 mJ vj vj on V = -15 / 15 V, R = 1,6 T = 150C 505 mJ GE Gon vj ( I = 2400 A, V = 600 V, L = 54 nH T = 25C 450 mJ C CE vj Turn-off energy loss per pulse du/dt = 2400 V/s (T = 150C) T = 125C E 560 mJ vj vj off V = -15 / 15 V, R = 0,3 T = 150C 595 mJ GE Goff vj V 15 V, V = 800 V GE CC I SC SC data V = V -L di/dt t 10 s, T = 150C 9600 A CEmax CES sCE P vj IGBT / per IGBT RthJC 12,0 K/kW Thermal resistance, junction to case IGBT / per IGBT R 9,75 K/kW thCH Thermal resistance, case to heatsink = 1 W/(mK) / = 1 W/(mK) Paste grease Tvj op -40 150 C Temperature under switching conditions Datasheet 2 V 2.3 2018-08-07