Technische Information / Technical Information IGBT-Module FZ2400R17HP4 B9 IGBT-modules IHM-B Modul mit soft schaltendem Trench-IGBT4 IHM-B module with soft-switching Trench-IGBT4 Vorlufige Daten / Preliminary Data VCES = 1700V I = 2400A / I = 4800A C nom CRM Typische Anwendungen Typical Applications Hochleistungsumrichter High Power Converters Motorantriebe Motor Drives Elektrische Eigenschaften Electrical Features Erweiterte Sperrschichttemperatur T Extended Operation Temperature T vj op vj op Niedriges V Low V CEsat CEsat Tvj op = 150C Tvj op = 150C Mechanische Eigenschaften Mechanical Features 4 kV AC 1min Isolationsfestigkeit 4 kV AC 1min Insulation Gehuse mit CTI > 400 Package with CTI > 400 Groe Luft- und Kriechstrecken High Creepage and Clearance Distances Hohe Leistungsdichte High Power Density IHM B Gehuse IHM B Housing Kupferbodenplatte Copper Base Plate Module Label Code Barcode Code 128 Content of the Code Digit Module Serial Number 1 - 5 Module Material Number 6 - 11 Production Order Number 12 - 19 DMX - Code Datecode (Production Year) 20 - 21 Datecode (Production Week) 22 - 23 prepared by: WB date of publication: 2013-11-11 approved by: PL revision: 2.2 UL approved (E83335) 1Technische Information / Technical Information IGBT-Module FZ2400R17HP4 B9 IGBT-modules Vorlufige Daten Preliminary Data IGBT,Wechselrichter / IGBT,Inverter Hchstzulssige Werte / Maximum Rated Values Kollektor-Emitter-Sperrspannung T = 25C V 1700 V vj CES Collector-emitter voltage Kollektor-Dauergleichstrom T = 100C, T = 175C I 2400 A C vj max C nom Continuous DC collector current Periodischer Kollektor-Spitzenstrom t = 1 ms I 4800 A P CRM Repetitive peak collector current Gesamt-Verlustleistung T = 25C, T = 175C P 15,5 kW C vj max tot Total power dissipation Gate-Emitter-Spitzenspannung VGES +/-20 V Gate-emitter peak voltage Charakteristische Werte / Characteristic Values min. typ. max. Kollektor-Emitter-Sttigungsspannung I = 2400 A, V = 15 V T = 25C 1,90 2,25 V C GE vj Collector-emitter saturation voltage I = 2400 A, V = 15 V T = 125C V 2,30 V C GE vj CE sat I = 2400 A, V = 15 V T = 150C 2,40 V C GE vj Gate-Schwellenspannung I = 96,0 mA, V = V , T = 25C V 5,2 5,8 6,4 V C CE GE vj GEth Gate threshold voltage Gateladung VGE = -15 V ... +15 V QG 25,0 C Gate charge Interner Gatewiderstand T = 25C R 0,65 vj Gint Internal gate resistor Eingangskapazitt f = 1 MHz, Tvj = 25C, VCE = 25 V, VGE = 0 V Cies 195 nF Input capacitance Rckwirkungskapazitt f = 1 MHz, T = 25C, V = 25 V, V = 0 V C 6,30 nF vj CE GE res Reverse transfer capacitance Kollektor-Emitter-Reststrom VCE = 1700 V, VGE = 0 V, Tvj = 25C ICES 5,0 mA Collector-emitter cut-off current Gate-Emitter-Reststrom V = 0 V, V = 20 V, T = 25C I 400 nA CE GE vj GES Gate-emitter leakage current Einschaltverzgerungszeit, induktive Last I = 2400 A, V = 900 V T = 25C 0,46 s C CE vj t d on Turn-on delay time, inductive load VGE = 15 V Tvj = 125C 0,50 s R = 0,8 T = 150C 0,53 s Gon vj Anstiegszeit, induktive Last I = 2400 A, V = 900 V T = 25C 0,21 s C CE vj t r Rise time, inductive load VGE = 15 V Tvj = 125C 0,22 s R = 0,8 T = 150C 0,23 s Gon vj Abschaltverzgerungszeit, induktive Last I = 2400 A, V = 900 V T = 25C 1,15 s C CE vj t d off Turn-off delay time, inductive load VGE = 15 V Tvj = 125C 1,30 s R = 0,4 T = 150C 1,30 s Goff vj Fallzeit, induktive Last I = 2400 A, V = 900 V T = 25C 0,28 s C CE vj t f Fall time, inductive load VGE = 15 V Tvj = 125C 0,46 s R = 0,4 T = 150C 0,50 s Goff vj Einschaltverlustenergie pro Puls I = 2400 A, V = 900 V, L = 50 nH T = 25C 510 mJ C CE S vj Turn-on energy loss per pulse VGE = 15 V, di/dt = 11500 A/s (Tvj = 150C)Tvj = 125C Eon 620 mJ R = 0,8 T = 150C 650 mJ Gon vj Abschaltverlustenergie pro Puls I = 2400 A, V = 900 V, L = 50 nH T = 25C 660 mJ C CE S vj Turn-off energy loss per pulse VGE = 15 V, du/dt = 3100 V/s (Tvj = 150C)Tvj = 125C Eoff 870 mJ R = 0,4 T = 150C 920 mJ Goff vj Kurzschluverhalten V 15 V, V = 1000 V GE CC ISC SC data VCEmax = VCES -LsCE di/dt tP 10 s, Tvj = 150C 11000 A Wrmewiderstand, Chip bis Gehuse pro IGBT / per IGBT R 9,70 K/kW thJC Thermal resistance, junction to case Wrmewiderstand, Gehuse bis Khlkrper pro IGBT / per IGBT R 6,50 K/kW thCH Thermal resistance, case to heatsink Paste = 1 W/(mK) / grease = 1 W/(mK) Temperatur im Schaltbetrieb T -40 150 C vj op Temperature under switching conditions prepared by: WB date of publication: 2013-11-11 approved by: PL revision: 2.2 2