/ Technical Information IGBT- FZ3600R12HP4 IGBT-modules IHM-B IGBT4 IHM-B module with soft-switching Trench-IGBT4 / Preliminary Data VCES = 1200V I = 3600A / I = 7200A C nom CRM Typical Applications High Power Converters Motor Drives Wind Turbines Electrical Features T Extended Operation Temperature T vj op vj op Mechanical Features 4 kV 1 4 kV AC 1min Insulation CTI > 400 Package with CTI > 400 High Power Density IHM B IHM B Housing Module Label Code Barcode Code 128 Content of the Code Digit Module Serial Number 1 - 5 Module Material Number 6 - 11 Production Order Number 12 - 19 DMX - Code Datecode (Production Year) 20 - 21 Datecode (Production Week) 22 - 23 prepared by: WB date of publication: 2013-11-11 approved by: PL revision: 2.3 UL approved (E83335) 1 / Technical Information IGBT- FZ3600R12HP4 IGBT-modules Preliminary Data IGBT, / IGBT,Inverter / Maximum Rated Values T = 25C V 1200 V vj CES Collector-emitter voltage T = 90C, T = 175C I 3600 A C vj max C nom Continuous DC collector current TC = 25C, Tvj max = 175C IC 4930 A t = 1 ms I 7200 A P CRM Repetitive peak collector current T = 25C, T = 175C P 19,0 kW C vj max tot Total power dissipation VGES +/-20 V Gate-emitter peak voltage / Characteristic Values min. typ. max. I = 3600 A, V = 15 V T = 25C 1,70 2,05 V C GE vj Collector-emitter saturation voltage I = 3600 A, V = 15 V T = 125C V 2,00 V C GE vj CE sat I = 3600 A, V = 15 V T = 150C 2,10 V C GE vj I = 135 mA, V = V , T = 25C V 5,1 5,8 6,5 V C CE GE vj GEth Gate threshold voltage VGE = -15 V ... +15 V QG 27,0 C Gate charge T = 25C R 0,54 vj Gint Internal gate resistor f = 1 MHz, Tvj = 25C, VCE = 25 V, VGE = 0 V Cies 225 nF Input capacitance f = 1 MHz, T = 25C, V = 25 V, V = 0 V C 12,0 nF vj CE GE res Reverse transfer capacitance - VCE = 1200 V, VGE = 0 V, Tvj = 25C ICES 5,0 mA Collector-emitter cut-off current - V = 0 V, V = 20 V, T = 25C I 400 nA CE GE vj GES Gate-emitter leakage current () I = 3600 A, V = 600 V T = 25C 0,44 s C CE vj t d on Turn-on delay time, inductive load VGE = 15 V Tvj = 125C 0,46 s R = 1,3 T = 150C 0,46 s Gon vj () I = 3600 A, V = 600 V T = 25C 0,43 s C CE vj t r Rise time, inductive load VGE = 15 V Tvj = 125C 0,43 s R = 1,3 T = 150C 0,43 s Gon vj () I = 3600 A, V = 600 V T = 25C 1,15 s C CE vj t d off Turn-off delay time, inductive load VGE = 15 V Tvj = 125C 1,25 s R = 0,22 T = 150C 1,30 s Goff vj () I = 3600 A, V = 600 V T = 25C 0,23 s C CE vj t f Fall time, inductive load VGE = 15 V Tvj = 125C 0,25 s R = 0,22 T = 150C 0,25 s Goff vj () I = 3600 A, V = 600 V, L = 50 nH T = 25C 485 mJ C CE S vj Turn-on energy loss per pulse VGE = 15 V, di/dt = 7300 A/s (Tvj = 150C) Tvj = 125C Eon 595 mJ R = 1,3 T = 150C 640 mJ Gon vj ( I = 3600 A, V = 600 V, L = 50 nH T = 25C 810 mJ C CE S vj Turn-off energy loss per pulse VGE = 15 V, du/dt = 2400 V/s (Tvj = 150C)Tvj = 125C Eoff 895 mJ R = 0,22 T = 150C 925 mJ Goff vj V 15 V, V = 800 V GE CC ISC SC data VCEmax = VCES -LsCE di/dt tP 10 s, Tvj = 150C 14000 A IGBT / per IGBT R 8,00 K/kW thJC Thermal resistance, junction to case IGBT / per IGBT R 6,50 K/kW thCH Thermal resistance, case to heatsink Paste = 1 W/(mK) / grease = 1 W/(mK) T -40 150 C vj op Temperature under switching conditions prepared by: WB date of publication: 2013-11-11 approved by: PL revision: 2.3 2