/ Technical Information IGBT- FZ400R17KE3 IGBT-modules 62mm C-Serien Modul mit Trench/Feldstop IGBT und Emitter Controlled Diode 62mm C-series module with trench/fieldstop IGBT and Emitter Controlled diode IGBT, / IGBT,Inverter Preliminary Data / Maximum Rated Values T = 25C V 1700 V vj CES Collector-emitter voltage T = 80C, T = 150C I 400 A C vj max C nom Continuous DC collector current TC = 25C, Tvj max = 150C IC 620 A t = 1 ms I 800 A P CRM Repetitive peak collector current T = 25C, T = 150 P 2250 W C vj max tot Total power dissipation VGES +/-20 V Gate-emitter peak voltage / Characteristic Values min. typ. max. I = 400 A, V = 15 V T = 25C 2,00 2,45 V C GE vj V CE sat Collector-emitter saturation voltage I = 400 A, V = 15 V T = 125C 2,40 V C GE vj IC = 16,0 mA, VCE = VGE, Tvj = 25C VGEth 5,2 5,8 6,4 V Gate threshold voltage V = -15 V ... +15 V Q 4,60 C GE G Gate charge Tvj = 25C RGint 1,9 Internal gate resistor f = 1 MHz, T = 25C, V = 25 V, V = 0 V C 36,0 nF vj CE GE ies Input capacitance f = 1 MHz, Tvj = 25C, VCE = 25 V, VGE = 0 V Cres 1,20 nF Reverse transfer capacitance - V = 1700 V, V = 0 V, T = 25C I 3,0 mA CE GE vj CES Collector-emitter cut-off current - V = 0 V, V = 20 V, T = 25C I 400 nA CE GE vj GES Gate-emitter leakage current () IC = 400 A, VCE = 900 V Tvj = 25C 0,28 s t d on Turn-on delay time, inductive load V = 15 V T = 125C 0,30 s GE vj RGon = 3,6 () IC = 400 A, VCE = 900 V Tvj = 25C 0,08 s t r Rise time, inductive load V = 15 V T = 125C 0,10 s GE vj RGon = 3,6 () IC = 400 A, VCE = 900 V Tvj = 25C 0,80 s t d off Turn-off delay time, inductive load V = 15 V T = 125C 1,00 s GE vj RGoff = 3,6 () IC = 400 A, VCE = 900 V Tvj = 25C 0,12 s t f Fall time, inductive load V = 15 V T = 125C 0,20 s GE vj RGoff = 3,6 () IC = 400 A, VCE = 900 V, LS = 60 nH Tvj = 25C 105 mJ Turn-on energy loss per pulse V = 15 V T = 125C E 135 mJ GE vj on RGon = 3,6 ( IC = 400 A, VCE = 900 V, LS = 60 nH Tvj = 25C 85,0 mJ Turn-off energy loss per pulse V = 15 V T = 125C E 125 mJ GE vj off RGoff = 3,6 VGE 15 V, VCC = 1000 V I SC SC data V = V -L di/dt t 10 s, T = 125C 1600 A CEmax CES sCE P vj IGBT / per IGBT R 0,055 K/W thJC Thermal resistance, junction to case IGBT / per IGBT R 0,017 K/W thCH Thermal resistance, case to heatsink = 1 W/(mK) / = 1 W/(mK) Paste grease T -40 125 C vj op Temperature under switching conditions prepared by: HS date of publication: 2013-10-03 approved by: WR revision: 2.2 1 / Technical Information IGBT- FZ400R17KE3 IGBT-modules Preliminary Data , / Diode, Inverter / Maximum Rated Values T = 25C V 1700 V vj RRM Repetitive peak reverse voltage I 400 A F Continuous DC forward current t = 1 ms I 800 A P FRM Repetitive peak forward current I2t- V = 0 V, t = 10 ms, T = 125C It 25500 As R P vj It - value / Characteristic Values min. typ. max. I = 400 A, V = 0 V T = 25C 1,80 2,20 V F GE vj VF Forward voltage I = 400 A, V = 0 V T = 125C 1,90 V F GE vj I = 400 A, - di /dt = 4250 A/s (T =125C) T = 25C 440 A F F vj vj Peak reverse recovery current V = 900 V T = 125C I 480 A R vj RM V = -15 V GE I = 400 A, - di /dt = 4250 A/s (T =125C) T = 25C 100 C F F vj vj Recovered charge V = 900 V T = 125C Q 170 C R vj r V = -15 V GE I = 400 A, - di /dt = 4250 A/s (T =125C) T = 25C 54,0 mJ F F vj vj Reverse recovery energy V = 900 V T = 125C E 96,0 mJ R vj rec V = -15 V GE / per diode R 0,08 K/W thJC Thermal resistance, junction to case / per diode RthCH 0,025 K/W Thermal resistance, case to heatsink = 1 W/(mK) / = 1 W/(mK) Paste grease T -40 125 C vj op Temperature under switching conditions prepared by: HS date of publication: 2013-10-03 approved by: WR revision: 2.2 2