/ Technical Information IGBT- FZ600R12KE4 IGBT-modules 62mm C-Series /IGBT4 62mm C-Series module with Trench/Fieldstop IGBT4 and Emitter Controlled 4 diode / Preliminary Data VCES = 1200V I = 600A / I = 1200A C nom CRM Typical Applications High Power Converters Motor Drives UPS UPS Systems Wind Turbines Electrical Features T vj op Extended Operation Temperature Tvj op Low Switching Losses Unbeatable Robustness V V with positive Temperature Coefficient CEsat CEsat V Low V CEsat CEsat Mechanical Features 4 kV 1 4 kV AC 1min Insulation CTI > 400 Package with CTI > 400 High Creepage and Clearance Distances Isolated Base Plate Standard Housing Module Label Code Barcode Code 128 Content of the Code Digit Module Serial Number 1 - 5 Module Material Number 6 - 11 Production Order Number 12 - 19 DMX - Code Datecode (Production Year) 20 - 21 Datecode (Production Week) 22 - 23 prepared by: MK date of publication: 2013-11-04 approved by: WR revision: 2.1 UL approved (E83335) 1 / Technical Information IGBT- FZ600R12KE4 IGBT-modules Preliminary Data IGBT, / IGBT,Inverter / Maximum Rated Values T = 25C V 1200 V vj CES Collector-emitter voltage T = 100C, T = 175C I 600 A C vj max C nom Continuous DC collector current t = 1 ms I 1200 A P CRM Repetitive peak collector current T = 25C, T = 175C P 3000 W C vj max tot Total power dissipation VGES +/-20 V Gate-emitter peak voltage / Characteristic Values min. typ. max. I = 600 A, V = 15 V T = 25C 1,75 2,10 V C GE vj Collector-emitter saturation voltage I = 600 A, V = 15 V T = 125C V 2,00 V C GE vj CE sat I = 600 A, V = 15 V T = 150C 2,05 V C GE vj I = 23,0 mA, V = V , T = 25C V 5,2 5,8 6,4 V C CE GE vj GEth Gate threshold voltage VGE = -15 V ... +15 V QG 5,60 C Gate charge T = 25C R 1,3 vj Gint Internal gate resistor f = 1 MHz, Tvj = 25C, VCE = 25 V, VGE = 0 V Cies 42,0 nF Input capacitance f = 1 MHz, T = 25C, V = 25 V, V = 0 V C 1,70 nF vj CE GE res Reverse transfer capacitance - VCE = 1200 V, VGE = 0 V, Tvj = 25C ICES 5,0 mA Collector-emitter cut-off current - V = 0 V, V = 20 V, T = 25C I 400 nA CE GE vj GES Gate-emitter leakage current () I = 600 A, V = 600 V T = 25C 0,24 s C CE vj t d on Turn-on delay time, inductive load VGE = 15 V Tvj = 125C 0,25 s R = 1,2 T = 150C 0,26 s Gon vj () I = 600 A, V = 600 V T = 25C 0,09 s C CE vj t r Rise time, inductive load VGE = 15 V Tvj = 125C 0,10 s R = 1,2 T = 150C 0,11 s Gon vj () I = 600 A, V = 600 V T = 25C 0,61 s C CE vj t d off Turn-off delay time, inductive load VGE = 15 V Tvj = 125C 0,64 s R = 1,2 T = 150C 0,66 s Goff vj () I = 600 A, V = 600 V T = 25C 0,10 s C CE vj t f Fall time, inductive load VGE = 15 V Tvj = 125C 0,14 s R = 1,2 T = 150C 0,15 s Goff vj () I = 600 A, V = 600 V, L = 60 nH T = 25C 35,0 mJ C CE S vj Turn-on energy loss per pulse VGE = 15 V, di/dt = 5500 A/s (Tvj = 150C) Tvj = 125C Eon 50,0 mJ R = 1,2 T = 150C 55,0 mJ Gon vj ( I = 600 A, V = 600 V, L = 60 nH T = 25C 50,0 mJ C CE S vj Turn-off energy loss per pulse VGE = 15 V, du/dt = 3500 V/s (Tvj = 150C)Tvj = 125C Eoff 75,0 mJ R = 1,2 T = 150C 80,0 mJ Goff vj V 15 V, V = 800 V GE CC ISC SC data VCEmax = VCES -LsCE di/dt tP 10 s, Tvj = 150C 2400 A IGBT / per IGBT R 0,05 K/W thJC Thermal resistance, junction to case IGBT / per IGBT R 0,017 K/W thCH Thermal resistance, case to heatsink Paste = 1 W/(mK) / grease = 1 W/(mK) T -40 150 C vj op Temperature under switching conditions prepared by: MK date of publication: 2013-11-04 approved by: WR revision: 2.1 2