FZ600R12KP4 62mm C-Serien Modul mit Trench/Feldstopp IGBT4 und Emitter Controlled 4 Diode 62mm C-Series module with Trench/Fieldstop IGBT4 and Emitter Controlled 4 diode V = 1200V CES I = 600A / I = 1200A C nom CRM Typische Anwendungen Typical Applications Hochleistungsumrichter High power converters Motorantriebe Motor drives USV-Systeme UPS systems Windgeneratoren Wind turbines Elektrische Eigenschaften Electrical Features Erweiterte Sperrschichttemperatur T Extended operating temperature T vj op vj op Niedriges V Low V CEsat CEsat Sehr groe Robustheit Unbeatable robustness V mit positivem Temperaturkoeffizienten V with positive temperature coefficient CEsat CEsat Mechanische Eigenschaften Mechanical Features 4 kV AC 1min Isolationsfestigkeit 4 kV AC 1min insulation Gehuse mit CTI > 400 Package with CTI > 400 Groe Luft- und Kriechstrecken High creepage and clearance distances Isolierte Bodenplatte Isolated base plate Standardgehuse Standard housing Module Label Code Barcode Code 128 Content of the Code Digit Module Serial Number 1 - 5 Module Material Number 6 - 11 Production Order Number 12 - 19 DMX - Code Datecode (Production Year) 20 - 21 Datecode (Production Week) 22 - 23 Datasheet Please read the Important Notice and Warnings at the end of this document V 3.0 www.infineon.com 2017-03-22FZ600R12KP4 IGBT,Wechselrichter / IGBT,Inverter Hchstzulssige Werte / Maximum Rated Values Kollektor-Emitter-Sperrspannung T = 25C V 1200 V vj CES Collector-emitter voltage Kollektor-Dauergleichstrom TC = 100C, Tvj max = 175C IC nom 600 A Continuous DC collector current Periodischer Kollektor-Spitzenstrom t = 1 ms I 1200 A P CRM Repetitive peak collector current Gate-Emitter-Spitzenspannung VGES +/-20 V Gate-emitter peak voltage Charakteristische Werte / Characteristic Values min. typ. max. Kollektor-Emitter-Sttigungsspannung IC = 600 A, VGE = 15 V Tvj = 25C 1,70 2,05 V Collector-emitter saturation voltage I = 600 A, V = 15 V T = 125C V 2,00 V C GE vj CE sat IC = 600 A, VGE = 15 V Tvj = 150C 2,10 V Gate-Schwellenspannung IC = 23,0 mA, VCE = VGE, Tvj = 25C VGEth 5,20 5,80 6,40 V Gate threshold voltage Gateladung V = -15 V ... +15 V Q 5,60 C GE G Gate charge Interner Gatewiderstand Tvj = 25C RGint 1,3 Internal gate resistor Eingangskapazitt f = 1 MHz, T = 25C, V = 25 V, V = 0 V C 42,0 nF vj CE GE ies Input capacitance Rckwirkungskapazitt f = 1 MHz, Tvj = 25C, VCE = 25 V, VGE = 0 V Cres 1,70 nF Reverse transfer capacitance Kollektor-Emitter-Reststrom V = 1200 V, V = 0 V, T = 25C I 5,0 mA CE GE vj CES Collector-emitter cut-off current Gate-Emitter-Reststrom VCE = 0 V, VGE = 20 V, Tvj = 25C IGES 400 nA Gate-emitter leakage current Einschaltverzgerungszeit, induktive Last IC = 600 A, VCE = 600 V Tvj = 25C 0,24 s t d on Turn-on delay time, inductive load V = 15 V T = 125C 0,25 s GE vj R = 1,2 T = 150C 0,26 s Gon vj Anstiegszeit, induktive Last IC = 600 A, VCE = 600 V Tvj = 25C 0,09 s t r Rise time, inductive load V = 15 V T = 125C 0,10 s GE vj R = 1,2 T = 150C 0,11 s Gon vj Abschaltverzgerungszeit, induktive Last I = 600 A, V = 600 V T = 25C 0,61 s C CE vj t d off Turn-off delay time, inductive load V = 15 V T = 125C 0,64 s GE vj R = 1,2 T = 150C 0,66 s Goff vj Fallzeit, induktive Last I = 600 A, V = 600 V T = 25C 0,14 s C CE vj t f Fall time, inductive load V = 15 V T = 125C 0,17 s GE vj R = 1,2 T = 150C 0,18 s Goff vj Einschaltverlustenergie pro Puls I = 600 A, V = 600 V, L = 60 nH T = 25C 35,0 mJ C CE S vj Turn-on energy loss per pulse V = 15 V, di/dt = 5500 A/s (T = 150C) T = 125C E 50,0 mJ GE vj vj on R = 1,2 T = 150C 55,0 mJ Gon vj Abschaltverlustenergie pro Puls I = 600 A, V = 600 V, L = 60 nH T = 25C 75,0 mJ C CE S vj Turn-off energy loss per pulse V = 15 V, du/dt = 3000 V/s (T = 150C)T = 125C E 100 mJ GE vj vj off R = 1,2 T = 150C 105 mJ Goff vj Kurzschluverhalten V 15 V, V = 800 V GE CC I SC SC data V = V -L di/dt t 10 s, T = 150C 2400 A CEmax CES sCE P vj Wrmewiderstand, Chip bis Gehuse pro IGBT / per IGBT RthJC 0,0480 K/W Thermal resistance, junction to case Wrmewiderstand, Gehuse bis Khlkrper pro IGBT / per IGBT R 0,0250 K/W thCH Thermal resistance, case to heatsink = 1 W/(mK) / = 1 W/(mK) Paste grease Temperatur im Schaltbetrieb Tvj op -40 150 C Temperature under switching conditions Datasheet 2 V 3.0 2017-03-22