Technische Information / Technical Information IGBT-Module FZ600R12KS4 IGBT-modules 62mm C-Serien Modul mit schnellem IGBT2 fr hochfrequentes Schalten 62mm C-series module with the fast IGBT2 for high-frequency switching IGBT,Wechselrichter / IGBT,Inverter Hchstzulssige Werte / Maximum Rated Values Kollektor-Emitter-Sperrspannung T = 25C V 1200 V vj CES Collector-emitter voltage Kollektor-Dauergleichstrom T = 60C, T = 150C I 600 A C vj max C nom Continuous DC collector current TC = 25C, Tvj max = 150C IC 700 A Periodischer Kollektor-Spitzenstrom t = 1 ms I 1200 A P CRM Repetitive peak collector current Gesamt-Verlustleistung T = 25C, T = 150 P 3900 W C vj max tot Total power dissipation Gate-Emitter-Spitzenspannung VGES +/-20 V Gate-emitter peak voltage Charakteristische Werte / Characteristic Values min. typ. max. Kollektor-Emitter-Sttigungsspannung I = 600 A, V = 15 V T = 25C 3,20 3,75 V C GE vj V CE sat Collector-emitter saturation voltage I = 600 A, V = 15 V T = 125C 3,85 V C GE vj Gate-Schwellenspannung IC = 24,0 mA, VCE = VGE, Tvj = 25C VGEth 4,5 5,5 6,5 V Gate threshold voltage Gateladung V = -15 V ... +15 V Q 6,30 C GE G Gate charge Interner Gatewiderstand Tvj = 25C RGint 0,5 Internal gate resistor Eingangskapazitt f = 1 MHz, T = 25C, V = 25 V, V = 0 V C 39,0 nF vj CE GE ies Input capacitance Rckwirkungskapazitt f = 1 MHz, Tvj = 25C, VCE = 25 V, VGE = 0 V Cres 2,60 nF Reverse transfer capacitance Kollektor-Emitter-Reststrom V = 1200 V, V = 0 V, T = 25C I 5,0 mA CE GE vj CES Collector-emitter cut-off current Gate-Emitter-Reststrom V = 0 V, V = 20 V, T = 25C I 400 nA CE GE vj GES Gate-emitter leakage current Einschaltverzgerungszeit, induktive Last IC = 600 A, VCE = 600 V Tvj = 25C 0,10 s t d on Turn-on delay time, inductive load V = 15 V T = 125C 0,11 s GE vj RGon = 1,5 Anstiegszeit, induktive Last IC = 600 A, VCE = 600 V Tvj = 25C 0,06 s t r Rise time, inductive load V = 15 V T = 125C 0,07 s GE vj RGon = 1,5 Abschaltverzgerungszeit, induktive Last IC = 600 A, VCE = 600 V Tvj = 25C 0,53 s t d off Turn-off delay time, inductive load V = 15 V T = 125C 0,55 s GE vj RGoff = 1,5 Fallzeit, induktive Last IC = 600 A, VCE = 600 V Tvj = 25C 0,03 s t f Fall time, inductive load V = 15 V T = 125C 0,04 s GE vj RGoff = 1,5 Einschaltverlustenergie pro Puls IC = 600 A, VCE = 600 V, LS = 80 nH Tvj = 25C mJ Turn-on energy loss per pulse V = 15 V T = 125C E 22,0 mJ GE vj on RGon = 1,5 Abschaltverlustenergie pro Puls IC = 600 A, VCE = 600 V, LS = 80 nH Tvj = 25C mJ Turn-off energy loss per pulse V = 15 V T = 125C E 46,0 mJ GE vj off RGoff = 1,5 Kurzschluverhalten VGE 15 V, VCC = 900 V I SC SC data V = V -L di/dt t 10 s, T = 125C 3900 A CEmax CES sCE P vj Wrmewiderstand, Chip bis Gehuse pro IGBT / per IGBT R 0,032 K/W thJC Thermal resistance, junction to case Wrmewiderstand, Gehuse bis Khlkrper pro IGBT / per IGBT R 0,016 K/W thCH Thermal resistance, case to heatsink = 1 W/(mK) / = 1 W/(mK) Paste grease Temperatur im Schaltbetrieb T -40 125 C vj op Temperature under switching conditions prepared by: MK date of publication: 2013-10-03 approved by: WR revision: 3.1 1Technische Information / Technical Information IGBT-Module FZ600R12KS4 IGBT-modules Diode, Wechselrichter / Diode, Inverter Hchstzulssige Werte / Maximum Rated Values Periodische Spitzensperrspannung T = 25C V 1200 V vj RRM Repetitive peak reverse voltage Dauergleichstrom I 600 A F Continuous DC forward current Periodischer Spitzenstrom t = 1 ms I 1200 A P FRM Repetitive peak forward current Grenzlastintegral V = 0 V, t = 10 ms, T = 125C It 75000 As R P vj It - value Charakteristische Werte / Characteristic Values min. typ. max. Durchlassspannung I = 600 A, V = 0 V T = 25C 2,00 2,55 V F GE vj VF Forward voltage I = 600 A, V = 0 V T = 125C 1,70 V F GE vj Rckstromspitze I = 600 A, - di /dt = 8000 A/s (T =125C) T = 25C 420 A F F vj vj Peak reverse recovery current V = 600 V T = 125C I 620 A R vj RM V = -15 V GE Sperrverzgerungsladung I = 600 A, - di /dt = 8000 A/s (T =125C) T = 25C 40,0 C F F vj vj Recovered charge V = 600 V T = 125C Q 90,0 C R vj r V = -15 V GE Abschaltenergie pro Puls I = 600 A, - di /dt = 8000 A/s (T =125C) T = 25C 25,0 mJ F F vj vj Reverse recovery energy V = 600 V T = 125C E 48,0 mJ R vj rec V = -15 V GE Wrmewiderstand, Chip bis Gehuse pro Diode / per diode R 0,05 K/W thJC Thermal resistance, junction to case Wrmewiderstand, Gehuse bis Khlkrper pro Diode / per diode RthCH 0,028 K/W Thermal resistance, case to heatsink = 1 W/(mK) / = 1 W/(mK) Paste grease Temperatur im Schaltbetrieb T -40 125 C vj op Temperature under switching conditions prepared by: MK date of publication: 2013-10-03 approved by: WR revision: 3.1 2