/ Technical Information IGBT- FZ600R17KE3 S4 IGBT-modules 62mm C-Series / IGBT3 and 3 diode 62mm C-Series module with Trench/Fieldstop IGBT3 and Emitter Controlled 3 diode VCES = 1700V I = 600A / I = 1200A C nom CRM Typical Applications High Power Converters Motor Drives Wind Turbines Electrical Features Low Switching Losses V CEsat Low VCEsat Unbeatable Robustness V V with positive Temperature Coefficient CEsat CEsat Mechanical Features 4 kV AC 1 4 kV AC 1min Insulation CTI(>400 Package with CTI > 400 / High Creepage and Clearance Distances Isolated Base Plate Standard Housing Module Label Code Barcode Code 128 Content of the Code Digit Module Serial Number 1 - 5 Module Material Number 6 - 11 Production Order Number 12 - 19 DMX - Code Datecode (Production Year) 20 - 21 Datecode (Production Week) 22 - 23 prepared by: KY date of publication: 2013-10-03 approved by: WR revision: 3.0 UL approved (E83335) 1 / Technical Information IGBT- FZ600R17KE3 S4 IGBT-modules IGBT- / IGBT,Inverter / Maximum Rated Values T = 25C V 1700 V vj CES Collector-emitter voltage DC T = 80C, T = 150C I 600 A C vj max C nom Continuous DC collector current TC = 25C, Tvj max = 150C IC 840 A t = 1 ms I 1200 A P CRM Repetitive peak collector current T = 25C, T = 150 P 3150 W C vj max tot Total power dissipation VGES +/-20 V Gate-emitter peak voltage / Characteristic Values min. typ. max. I = 600 A, V = 15 V T = 25C 2,00 2,45 V C GE vj V CE sat Collector-emitter saturation voltage I = 600 A, V = 15 V T = 125C 2,40 V C GE vj IC = 24,0 mA, VCE = VGE, Tvj = 25C VGEth 5,2 5,8 6,4 V Gate threshold voltage V = -15 V ... +15 V Q 7,00 C GE G Gate charge Tvj = 25C RGint 1,3 Internal gate resistor f = 1 MHz, T = 25C, V = 25 V, V = 0 V C 54,0 nF vj CE GE ies Input capacitance f = 1 MHz, Tvj = 25C, VCE = 25 V, VGE = 0 V Cres 1,70 nF Reverse transfer capacitance V = 1700 V, V = 0 V, T = 25C I 3,0 mA CE GE vj CES Collector-emitter cut-off current V = 0 V, V = 20 V, T = 25C I 400 nA CE GE vj GES Gate-emitter leakage current IC = 600 A, VCE = 900 V Tvj = 25C 0,28 s t d on Turn-on delay time, inductive load V = 15 V T = 125C 0,30 s GE vj RGon = 2,4 IC = 600 A, VCE = 900 V Tvj = 25C 0,08 s t r Rise time, inductive load V = 15 V T = 125C 0,10 s GE vj RGon = 2,4 IC = 600 A, VCE = 900 V Tvj = 25C 0,80 s t d off Turn-off delay time, inductive load V = 15 V T = 125C 1,00 s GE vj RGoff = 2,4 IC = 600 A, VCE = 900 V Tvj = 25C 0,12 s t f Fall time, inductive load V = 15 V T = 125C 0,20 s GE vj RGoff = 2,4 IC = 600 A, VCE = 900 V, LS = 60 nH Tvj = 25C 140 mJ Turn-on energy loss per pulse V = 15 V, di/dt = 4600 A/s T = 125C E 200 mJ GE vj on RGon = 2,4 IC = 600 A, VCE = 900 V, LS = 60 nH Tvj = 25C 130 mJ Turn-off energy loss per pulse V = 15 V, du/dt = 3750 V/s T = 125C E 190 mJ GE vj off RGoff = 2,4 VGE 15 V, VCC = 1000 V I SC SC data V = V -L di/dt t 10 s, T = 125C 2400 A CEmax CES sCE P vj IGBT / per IGBT R 0,04 K/W thJC Thermal resistance, junction to case IGBT / per IGBT R 0,016 K/W thCH Thermal resistance, case to heatsink = 1 W/(mK) / = 1 W/(mK) Paste grease T -40 125 C vj op Temperature under switching conditions prepared by: KY date of publication: 2013-10-03 approved by: WR revision: 3.0 2