Technische Information / Technical Information IGBT-Module FZ900R12KE4 IGBT-modules 62mm C-Serien Modul mit Trench/Feldstopp IGBT4 und Emitter Controlled 4 Diode 62mm C-Series module with Trench/Fieldstop IGBT4 and Emitter Controlled 4 diode Vorlufige Daten / Preliminary Data VCES = 1200V I = 900A / I = 1800A C nom CRM Typische Anwendungen Typical Applications Hochleistungsumrichter High Power Converters Motorantriebe Motor Drives USV-Systeme UPS Systems Windgeneratoren Wind Turbines Elektrische Eigenschaften Electrical Features Erweiterte Sperrschichttemperatur T vj op Extended Operation Temperature Tvj op Niedrige Schaltverluste Low Switching Losses Sehr groe Robustheit Unbeatable Robustness V mit positivem Temperaturkoeffizienten V with positive Temperature Coefficient CEsat CEsat Niedriges V Low V CEsat CEsat Mechanische Eigenschaften Mechanical Features 4 kV AC 1min Isolationsfestigkeit 4 kV AC 1min Insulation Gehuse mit CTI > 400 Package with CTI > 400 Groe Luft- und Kriechstrecken High Creepage and Clearance Distances Hohe Leistungsdichte High Power Density Isolierte Bodenplatte Isolated Base Plate Standardgehuse Standard Housing Module Label Code Barcode Code 128 Content of the Code Digit Module Serial Number 1 - 5 Module Material Number 6 - 11 Production Order Number 12 - 19 DMX - Code Datecode (Production Year) 20 - 21 Datecode (Production Week) 22 - 23 prepared by: MK date of publication: 2013-11-04 approved by: WR revision: 2.3 UL approved (E83335) 1Technische Information / Technical Information IGBT-Module FZ900R12KE4 IGBT-modules Vorlufige Daten Preliminary Data IGBT,Wechselrichter / IGBT,Inverter Hchstzulssige Werte / Maximum Rated Values Kollektor-Emitter-Sperrspannung T = 25C V 1200 V vj CES Collector-emitter voltage Kollektor-Dauergleichstrom T = 95C, T = 175C I 900 A C vj max C nom Continuous DC collector current Periodischer Kollektor-Spitzenstrom t = 1 ms I 1800 A P CRM Repetitive peak collector current Gesamt-Verlustleistung T = 25C, T = 175C P 4300 W C vj max tot Total power dissipation Gate-Emitter-Spitzenspannung VGES +/-20 V Gate-emitter peak voltage Charakteristische Werte / Characteristic Values min. typ. max. Kollektor-Emitter-Sttigungsspannung I = 900 A, V = 15 V T = 25C 1,75 2,10 V C GE vj Collector-emitter saturation voltage I = 900 A, V = 15 V T = 125C V 2,00 V C GE vj CE sat I = 900 A, V = 15 V T = 150C 2,05 V C GE vj Gate-Schwellenspannung I = 32,0 mA, V = V , T = 25C V 5,2 5,8 6,4 V C CE GE vj GEth Gate threshold voltage Gateladung VGE = -15 V ... +15 V QG 7,40 C Gate charge Interner Gatewiderstand T = 25C R 0,9 vj Gint Internal gate resistor Eingangskapazitt f = 1 MHz, Tvj = 25C, VCE = 25 V, VGE = 0 V Cies 56,0 nF Input capacitance Rckwirkungskapazitt f = 1 MHz, T = 25C, V = 25 V, V = 0 V C 2,20 nF vj CE GE res Reverse transfer capacitance Kollektor-Emitter-Reststrom VCE = 1200 V, VGE = 0 V, Tvj = 25C ICES 5,0 mA Collector-emitter cut-off current Gate-Emitter-Reststrom V = 0 V, V = 20 V, T = 25C I 400 nA CE GE vj GES Gate-emitter leakage current Einschaltverzgerungszeit, induktive Last I = 900 A, V = 600 V T = 25C 0,24 s C CE vj t d on Turn-on delay time, inductive load VGE = 15 V Tvj = 125C 0,25 s R = 1,5 T = 150C 0,26 s Gon vj Anstiegszeit, induktive Last I = 900 A, V = 600 V T = 25C 0,09 s C CE vj t r Rise time, inductive load VGE = 15 V Tvj = 125C 0,10 s R = 1,5 T = 150C 0,11 s Gon vj Abschaltverzgerungszeit, induktive Last I = 900 A, V = 600 V T = 25C 0,61 s C CE vj t d off Turn-off delay time, inductive load VGE = 15 V Tvj = 125C 0,64 s R = 0,9 T = 150C 0,66 s Goff vj Fallzeit, induktive Last I = 900 A, V = 600 V T = 25C 0,10 s C CE vj t f Fall time, inductive load VGE = 15 V Tvj = 125C 0,14 s R = 0,9 T = 150C 0,15 s Goff vj Einschaltverlustenergie pro Puls I = 900 A, V = 600 V, L = 60 nH T = 25C 40,0 mJ C CE S vj Turn-on energy loss per pulse VGE = 15 V, di/dt = 6000 A/s (Tvj = 150C) Tvj = 125C Eon 55,0 mJ R = 1,5 T = 150C 60,0 mJ Gon vj Abschaltverlustenergie pro Puls I = 900 A, V = 600 V, L = 60 nH T = 25C 80,0 mJ C CE S vj Turn-off energy loss per pulse VGE = 15 V, du/dt = 3500 V/s (Tvj = 150C)Tvj = 125C Eoff 115 mJ R = 0,9 T = 150C 130 mJ Goff vj Kurzschluverhalten V 15 V, V = 800 V GE CC ISC SC data VCEmax = VCES -LsCE di/dt tP 10 s, Tvj = 150C 3600 A Wrmewiderstand, Chip bis Gehuse pro IGBT / per IGBT R 0,035 K/W thJC Thermal resistance, junction to case Wrmewiderstand, Gehuse bis Khlkrper pro IGBT / per IGBT R 0,016 K/W thCH Thermal resistance, case to heatsink Paste = 1 W/(mK) / grease = 1 W/(mK) Temperatur im Schaltbetrieb T -40 150 C vj op Temperature under switching conditions prepared by: MK date of publication: 2013-11-04 approved by: WR revision: 2.3 2