FZ900R12KP4 62mm C-Series /IGBT4 62mm C-Series module with Trench/Fieldstop IGBT4 and Emitter Controlled 4 diode V = 1200V CES I = 900A / I = 1800A C nom CRM Typical Applications High power converters Motor drives UPS UPS systems Wind turbines Electrical Features T Extended operating temperature T vj op vj op V Low V CEsat CEsat Unbeatable robustness V V with positive temperature coefficient CEsat CEsat Mechanical Features 4 kV 1 4 kV AC 1min insulation CTI > 400 Package with CTI > 400 High creepage and clearance distances High power density Isolated base plate Standard housing Module Label Code Barcode Code 128 Content of the Code Digit Module Serial Number 1 - 5 Module Material Number 6 - 11 Production Order Number 12 - 19 DMX - Code Datecode (Production Year) 20 - 21 Datecode (Production Week) 22 - 23 Datasheet Please read the Important Notice and Warnings at the end of this document V 3.0 www.infineon.com 2017-03-22FZ900R12KP4 IGBT, / IGBT,Inverter / Maximum Rated Values T = 25C V 1200 V vj CES Collector-emitter voltage TC = 95C, Tvj max = 175C IC nom 900 A Continuous DC collector current t = 1 ms I 1800 A P CRM Repetitive peak collector current VGES +/-20 V Gate-emitter peak voltage / Characteristic Values min. typ. max. IC = 900 A, VGE = 15 V Tvj = 25C 1,70 2,05 V Collector-emitter saturation voltage I = 900 A, V = 15 V T = 125C V 2,00 V C GE vj CE sat IC = 900 A, VGE = 15 V Tvj = 150C 2,10 V IC = 32,0 mA, VCE = VGE, Tvj = 25C VGEth 5,20 5,80 6,40 V Gate threshold voltage V = -15 V ... +15 V Q 7,40 C GE G Gate charge Tvj = 25C RGint 0,9 Internal gate resistor f = 1 MHz, T = 25C, V = 25 V, V = 0 V C 56,0 nF vj CE GE ies Input capacitance f = 1 MHz, Tvj = 25C, VCE = 25 V, VGE = 0 V Cres 2,20 nF Reverse transfer capacitance - V = 1200 V, V = 0 V, T = 25C I 5,0 mA CE GE vj CES Collector-emitter cut-off current - VCE = 0 V, VGE = 20 V, Tvj = 25C IGES 400 nA Gate-emitter leakage current () IC = 900 A, VCE = 600 V Tvj = 25C 0,24 s t d on Turn-on delay time, inductive load V = 15 V T = 125C 0,25 s GE vj R = 1,5 T = 150C 0,26 s Gon vj () IC = 900 A, VCE = 600 V Tvj = 25C 0,09 s t r Rise time, inductive load V = 15 V T = 125C 0,10 s GE vj R = 1,5 T = 150C 0,11 s Gon vj () I = 900 A, V = 600 V T = 25C 0,61 s C CE vj t d off Turn-off delay time, inductive load V = 15 V T = 125C 0,64 s GE vj R = 0,9 T = 150C 0,66 s Goff vj () I = 900 A, V = 600 V T = 25C 0,14 s C CE vj t f Fall time, inductive load V = 15 V T = 125C 0,17 s GE vj R = 0,9 T = 150C 0,18 s Goff vj () I = 900 A, V = 600 V, L = 60 nH T = 25C 40,0 mJ C CE S vj Turn-on energy loss per pulse V = 15 V, di/dt = 6000 A/s (T = 150C) T = 125C E 55,0 mJ GE vj vj on R = 1,5 T = 150C 60,0 mJ Gon vj ( I = 900 A, V = 600 V, L = 60 nH T = 25C 110 mJ C CE S vj Turn-off energy loss per pulse V = 15 V, du/dt = 3000 V/s (T = 150C)T = 125C E 160 mJ GE vj vj off R = 0,9 T = 150C 175 mJ Goff vj V 15 V, V = 800 V GE CC I SC SC data V = V -L di/dt t 10 s, T = 150C 3600 A CEmax CES sCE P vj IGBT / per IGBT RthJC 0,0310 K/W Thermal resistance, junction to case IGBT / per IGBT R 0,0180 K/W thCH Thermal resistance, case to heatsink = 1 W/(mK) / = 1 W/(mK) Paste grease Tvj op -40 150 C Temperature under switching conditions Datasheet 2 V 3.0 2017-03-22