IFS150B17N3E4P B11 MIPAQbase / IGBT4 and diode and pressFIT / MIPAQbase module with Trench/Fieldstop IGBT4 and Emitter Controlled diode and PressFIT / pre-applied Thermal Interface Material J V = 1700V CES I = 150A / I = 300A C nom CRM Typical Applications Motor drives UPS UPS systems Electrical Features Tvj op Extended operating temperature Tvj op V Low V CEsat CEsat V V with positive temperature coefficient CEsat CEsat Mechanical Features NTC Integrated NTC temperature sensor Isolated base plate Solder contact technology Standard housing Pre-applied Thermal Interface Material Module Label Code Barcode Code 128 Content of the Code Digit Module Serial Number 1 - 5 Module Material Number 6 - 11 Production Order Number 12 - 19 DMX - Code Datecode (Production Year) 20 - 21 Datecode (Production Week) 22 - 23 Datasheet Please read the Important Notice and Warnings at the end of this document V 3.0 www.infineon.com 2017-01-13IFS150B17N3E4P B11 IGBT- / IGBT,Inverter / Maximum Rated Values T = 25C V 1700 V vj CES Collector-emitter voltage DC TH = 80C, Tvj max = 175C IC nom 150 A Continuous DC collector current t = 1 ms I 300 A P CRM Repetitive peak collector current VGES +/-20 V Gate-emitter peak voltage / Characteristic Values min. typ. max. IC = 150 A, VGE = 15 V Tvj = 25C 1,95 2,30 V Collector-emitter saturation voltage I = 150 A, V = 15 V T = 125C V 2,35 V C GE vj CE sat IC = 150 A, VGE = 15 V Tvj = 150C 2,45 V IC = 6,00 mA, VCE = VGE, Tvj = 25C VGEth 5,25 5,80 6,35 V Gate threshold voltage V = -15 V ... +15 V Q 1,70 C GE G Gate charge Tvj = 25C RGint 5,0 Internal gate resistor f = 1 MHz, T = 25C, V = 25 V, V = 0 V C 13,5 nF vj CE GE ies Input capacitance f = 1 MHz, Tvj = 25C, VCE = 25 V, VGE = 0 V Cres 0,44 nF Reverse transfer capacitance V = 1700 V, V = 0 V, T = 25C I 1,0 mA CE GE vj CES Collector-emitter cut-off current VCE = 0 V, VGE = 20 V, Tvj = 25C IGES 100 nA Gate-emitter leakage current IC = 150 A, VCE = 900 V Tvj = 25C 0,20 s t d on Turn-on delay time, inductive load V = 15 V T = 125C 0,22 s GE vj R = 0,24 T = 150C 0,23 s Gon vj IC = 150 A, VCE = 900 V Tvj = 25C 0,03 s t r Rise time, inductive load V = 15 V T = 125C 0,04 s GE vj R = 0,24 T = 150C 0,04 s Gon vj I = 150 A, V = 900 V T = 25C 0,40 s C CE vj t d off Turn-off delay time, inductive load V = 15 V T = 125C 0,55 s GE vj R = 0,24 T = 150C 0,59 s Goff vj I = 150 A, V = 900 V T = 25C 0,09 s C CE vj t f Fall time, inductive load V = 15 V T = 125C 0,15 s GE vj R = 0,24 T = 150C 0,17 s Goff vj I = 150 A, V = 900 V, L = 30 nH T = 25C 25,0 mJ C CE S vj Turn-on energy loss per pulse V = 15 V, di/dt = 4500 A/s (T = 150C) T = 125C E 36,0 mJ GE vj vj on R = 0,24 T = 150C 39,5 mJ Gon vj I = 150 A, V = 900 V, L = 30 nH T = 25C 27,0 mJ C CE S vj Turn-off energy loss per pulse V = 15 V, du/dt = 3100 V/s (T = 150C)T = 125C E 44,0 mJ GE vj vj off R = 0,24 T = 150C 49,5 mJ Goff vj V 15 V, V = 1000 V GE CC I SC SC data V = V -L di/dt t 10 s, T = 150C 700 A CEmax CES sCE P vj IGBT / per IGBT RthJH 0,206 K/W Thermal resistance, junction to heatsink valid with IFX pre-applied thermal interface material T -40 150 C vj op Temperature under switching conditions Datasheet 2 V 3.0 2017-01-13