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X-On Electronics has gained recognition as a prominent supplier of IMW120R140M1HXKSA1 MOSFETs across the USA, India, Europe, Australia, and various other global locations. IMW120R140M1HXKSA1 MOSFETs are a product manufactured by Infineon. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

IMW120R140M1HXKSA1 Infineon

IMW120R140M1HXKSA1 electronic component of Infineon
IMW120R140M1HXKSA1 Infineon
IMW120R140M1HXKSA1 MOSFETs
IMW120R140M1HXKSA1  Semiconductors

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See Product Specifications
Part No. IMW120R140M1HXKSA1
Manufacturer: Infineon
Category: MOSFETs
Description: N-Channel 1200 V 19A (Tc) 94W (Tc) Through Hole PG-TO247-3-41
Datasheet: IMW120R140M1HXKSA1 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 9.9048 ea
Line Total: USD 9.9 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Mon. 17 Mar to Fri. 21 Mar
MOQ : 1
Multiples : 1
1 : USD 21.8216
10 : USD 19.0069
100 : USD 15.7348
500 : USD 13.7016
1000 : USD 11.9337

0
Ship by Mon. 24 Mar to Thu. 27 Mar
MOQ : 1
Multiples : 1
1 : USD 9.9048
10 : USD 9.6717
30 : USD 9.5169
90 : USD 9.362

0
Ship by Thu. 13 Mar to Mon. 17 Mar
MOQ : 1
Multiples : 1
1 : USD 10.4348
10 : USD 9.0547

0
Ship by Thu. 13 Mar to Mon. 17 Mar
MOQ : 1
Multiples : 1
1 : USD 16.6333
2 : USD 10.8524
4 : USD 10.2611

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Transistor Type
Brand
Forward Transconductance - Min
Product Type
Factory Pack Quantity :
Subcategory
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the IMW120R140M1HXKSA1 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IMW120R140M1HXKSA1 and other electronic components in the MOSFETs category and beyond.

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IMW120R140M1H IMW120R140M1H CoolSiC 1200V SiC Trench MOSFET Silicon Carbide MOSFET Drain pin 2 Features Gate Very low switching losses pin 1 Threshold-free on state characteristic Source Wide gate-source voltage range pin 3 Benchmark gate threshold voltage, V = 4.5V GS(th) 0V turn-off gate voltage for easy and simple gate drive Fully controllable dV/dt Robust body diode for hard commutation Temperature independent turn-off switching losses Benefits Efficiency improvement Enabling higher frequency Increased power density Cooling effort reduction Reduction of system complexity and cost Potential applications Energy generation o Solar string inverter and solar optimizer Industrial power supplies o Industrial UPS o Industrial SMPS Infrastructure Charge o Charger Product validation Qualified for industrial applications according to the relevant tests of JEDEC 47/20/22 Table 1 Key Performance and Package Parameters Type V I R T Marking Package DS D DS(on) vj,max TC = 25C, Rth(j-c,max) Tvj = 25C, ID = 6A, VGS = 18V IMW120R140M1H 1200V 19A 140m 175C 12M1H140 PG-TO247-3 Datasheet Please read the Important Notice and Warnings at the end of this document 2.2 www.infineon.com page 1 of 17 2020-12-11 IMW120R140M1H CoolSiC 1200V SiC Trench MOSFET Ta ble of contents 1200V SiC Trench MOSFET Table of contents Features ........................................................................................................................................ 1 Benefits ......................................................................................................................................... 1 Potential applications ..................................................................................................................... 1 Product validation .......................................................................................................................... 1 Table of contents ............................................................................................................................ 2 1 Maximum ratings ................................................................................................................... 3 2 Thermal resistances ............................................................................................................... 4 3 Electrical Characteristics ........................................................................................................ 5 3.1 Static characteristics ............................................................................................................................... 5 3.2 Dynamic characteristics .......................................................................................................................... 6 3.3 Switching characteristics ........................................................................................................................ 7 4 Electrical characteristic diagrams ............................................................................................ 8 5 Package drawing ................................................................................................................... 14 6 Test conditions ..................................................................................................................... 15 Revision history............................................................................................................................. 16 Datasheet 2 of 17 2.2 2020-12-11

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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