X-On Electronics has gained recognition as a prominent supplier of IPD053N08N3G MOSFETs across the USA, India, Europe, Australia, and various other global locations. IPD053N08N3G MOSFETs are a product manufactured by Infineon. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

IPD053N08N3G Infineon

Name: IPD053N08N3G
Brand: Infineon
SKU: IPD053N08N3G_1_Infineon
Availability: InStock
Rating: 5 (11 reviews)

IPD053N08N3G electronic component of Infineon

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See Product Specifications

Part No.	IPD053N08N3G
Manufacturer:	Infineon
Category:	MOSFETs
Description:	MOSFET N Channel 80V 90A(Tc) 3.5V @ 90uA 5.3mO @ 90A,10V TO-252 RoHS
Datasheet:	IPD053N08N3G Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

1: USD 2.6964 ea
Line Total: USD 2.7

Availability - 2013
Ship by Fri. 28 Feb to Wed. 05 Mar

MOQ: 1 Multiples: 1
Pack Size: 1

IPD053N08N3G More Buying Options & Price Grid(s)

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Availability Price Buy Price Quantity

2013

Ship by Fri. 28 Feb to Wed. 05 Mar

MOQ : 1
Multiples : 1

1 : USD 2.6964
10 : USD 1.9231
30 : USD 1.5132
100 : USD 1.2901
500 : USD 1.189
1000 : USD 1.1449
2500 : USD 1.1259

Specifications

Manufacturer

Infineon Infineon

Product Category

MOSFETs MOSFETs

Category

MOSFET MOSFET

Rohs

y y

Package

TO - 252 TO - 252

Brand Category

Infineon Infineon

Fet Type

N Channel N Channel

Drain To Source Voltagevdss

80 V 80 V

Continuous Drain Current Id @ 25°C

90 A (T C) 90 A (T C)

Vgsth Max @ Id

3.5V @ 90uA 3.5V @ 90uA

Rds On Max @ Id Vgs

5.3mO @ 90A,10V 5.3mO @ 90A,10V

Power Dissipation-Max Ta 25°C

150 W (Tc) 150 W (Tc)

Drain Source Voltage Vdss

80 V 80 V

Continuous Drain Current Id

90 A 90 A

Power Dissipation Pd

150 W 150 W

Drain Source On Resistance Rdson@Vgs Id

5.3 mOhms @10V , 90A 5.3 mOhms @10V , 90A

Gate Threshold Voltage Vgsth@Id

3.5 V @90uA 3.5 V @90uA

Type

N Channel N Channel

Notes:- Show Stocked Products With Similar Attributes.

IPD053N08N3G Alternative Parts

We are delighted to provide the IPD053N08N3G from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IPD053N08N3G and other electronic components in the MOSFETs category and beyond.

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Additional Infomation About Product

The IPD053N08N3G is an N-Channel MOSFET manufactured by Infineon. It is made with a TO-252 RoHS package and has a breakdown voltage of 80V, current rating of 90A (Tc), gate-source voltage of 3.5V at 90uA, and drain-source on-state resistance of 5.3mO at 90A. This device is suitable for automotive and industrial applications as well as other power management tasks.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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Availability	Price	Buy Price	Quantity
2013 Ship by Fri. 28 Feb to Wed. 05 Mar MOQ : 1 Multiples : 1	1 : USD 2.6964 10 : USD 1.9231 30 : USD 1.5132 100 : USD 1.2901 500 : USD 1.189 1000 : USD 1.1449 2500 : USD 1.1259

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