IRF6607 HEXFET Power MOSFET V R max Application Specific MOSFETs Qg(typ.) DSS DS(on) Ideal for CPU Core DC-DC Converters 30V 3.3m V = 10V 50nC GS 4.4m V = 4.5V Low Conduction Losses GS High Cdv/dt Immunity Low Profile (<0.7 mm) Dual Sided Cooling Compatible Compatible with existing Surface Mount Techniques DirectFET ISOMETRIC Applicable DirectFET Outline and Substrate Outline (see p.9,10 for details) SQ SX ST MQ MX MT Description TM The IRF6607 combines the latest HEXFET Power MOSFET Silicon technology with the advanced DirectFET packaging to achieve the lowest on-state resistance in a package that has the footprint of an SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manu- facturing methods and process. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, IMPROVING previous best thermal resistance by 80%. The IRF6607 balances both low resistance and low charge along with ultra low package inductance to reduce both conduc- tion and switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors operating at higher frequencies. The IRF6607 has been optimized for parameters that are critical in synchronous buck converters including Rds(on), gate charge and Cdv/dt-induced turn on immunity. The IRF6607 offers particularly low Rds(on) and high Cdv/dt immunity for synchronous FET applications. Absolute Maximum Ratings Max. Parameter Units V Drain-to-Source Voltage 30 V DS V Gate-to-Source Voltage 12 GS I T = 25C Continuous Drain Current, V 10V 94 GS D C I T = 25C Continuous Drain Current, V 10V 27 A GS D A I T = 70C Continuous Drain Current, V 10V 22 GS D A I Pulsed Drain Current 220 DM P T = 25C Power Dissipation 3.6 A D 2.3 P T = 70C Power Dissipation W A D 42 P T = 25C Power Dissipation C D 0.029 Linear Derating Factor W/C -40 to + 150 T Operating Junction and C J Storage Temperature Range T STG Thermal Resistance Parameter Typ. Max. Units R JA Junction-to-Ambient 35 R Junction-to-Ambient 12.5 JA R Junction-to-Ambient 20 C/W JA R Junction-to-Case 3.0 JC R Junction-to-PCB Mounted 1.0 J-PCB Notes through are on page 10 www.irf.com 1 12/22/05 Static T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions BV Drain-to-Source Breakdown Voltage 30 V V = 0V, I = 250A DSS GS D V /T Breakdown Voltage Temp. Coefficient 29 mV/C Reference to 25C, I = 1mA DSS J D R Static Drain-to-Source On-Resistance 2.5 3.3 m V = 10V, I = 25A DS(on) GS D 3.4 4.4 V = 4.5V, I = 20A GS D V Gate Threshold Voltage 1.3 2.0 V V = V , I = 250A GS(th) DS GS D V /T Gate Threshold Voltage Coefficient -5.3 mV/C GS(th) J I Drain-to-Source Leakage Current 30 A V = 24V, V = 0V DSS DS GS 50 A V = 30V, V = 0V DS GS 100 V = 24V, V = 0V, T = 70C DS GS J I Gate-to-Source Forward Leakage 100 nA V = 12V GSS GS = -12V Gate-to-Source Reverse Leakage -100 V GS gfs Forward Transconductance 120 S V = 15V, I = 20A DS D Q Total Gate Charge 50 75 g Q Pre-Vth Gate-to-Source Charge 13 V = 15V gs1 DS Q Post-Vth Gate-to-Source Charge 4.0 nC V = 4.5V gs2 GS Q Gate-to-Drain Charge 16 I = 20A gd D Q Gate Charge Overdrive 18 See Fig. 16 godr Q Switch Charge (Q + Q ) 20 sw gs2 gd Q Output Charge 30 nC V = 16V, V = 0V oss DS GS R Gate Resistance 0.86 1.9 G t Turn-On Delay Time 60 V = 15V, V = 4.5V d(on) DD GS t Rise Time 8.0 I = 20A r D t Turn-Off Delay Time 32 ns Clamped Inductive Load d(off) t Fall Time 13 f C Input Capacitance 6930 V = 0V iss GS C Output Capacitance 1260 pF V = 15V oss DS Reverse Transfer Capacitance 510 = 1.0MHz C rss Avalanche Characteristics Parameter Typ. Max. Units Single Pulse Avalanche Energy E 51 mJ AS Avalanche Current I 20 A AR Repetitive Avalanche Energy E 0.36 mJ AR Diode Characteristics Parameter Min. Typ. Max. Units Conditions D I Continuous Source Current 38 MOSFET symbol S (Body Diode) A showing the G I Pulsed Source Current 220 integral reverse SM S (Body Diode) p-n junction diode. V Diode Forward Voltage 1.0 1.3 V T = 25C, I = 20A, V = 0V SD J S GS t Reverse Recovery Time 46 69 ns T = 25C, I = 20A rr J F Q Reverse Recovery Charge 54 81 nC di/dt = 100A/s rr 2 www.irf.com