IRF6722MPbF IRF6722MTRPbF DirectFET Power MOSFET RoHS Compliant Containing No Lead and Bromide V V R R DSS GS DS(on) DS(on) Low Profile (<0.7 mm) 30V max 20V max 4.7m 10V 8.0m 4.5V Dual Sided Cooling Compatible Ultra Low Package Inductance Q Q Q Q Q V g tot gd gs2 rr oss gs(th) Optimized for High Frequency Switching 11nC 4.3nC 1.2nC 26nC 11nC 1.8V Ideal for CPU Core DC-DC Converters Optimized for Control FET application Low Conduction and Switching Losses Compatible with existing Surface Mount Techniques 100% Rg tested DirectFET ISOMETRIC Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details) SQ SX ST MQ MX MT MP Description TM The IRF6722MPbF combines the latest HEXFET Power MOSFET Silicon technology with the advanced DirectFET packaging to achieve the lowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET pack- age allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%. The IRF6722MPbF balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors operating at higher frequencies. The IRF6722MPbF has been optimized for parameters that are critical in synchronous buck operating from 12 volt bus converters including Rds(on) and gate charge to minimize losses. Absolute Maximum Ratings Max. Parameter Units V Drain-to-Source Voltage 30 V DS 20 V Gate-to-Source Voltage GS Continuous Drain Current, V 10V 13 I T = 25C GS D A I T = 70C Continuous Drain Current, V 10V 11 A GS D A Continuous Drain Current, V 10V 56 I T = 25C C GS D I Pulsed Drain Current 110 DM E 82 Single Pulse Avalanche Energy mJ AS I 11 AS Avalanche Current A 20 14.0 I = 13A I = 11A D D V = 24V 12.0 DS 15 V = 15V DS 10.0 8.0 10 T = 125C 6.0 J 4.0 5 2.0 T = 25C J 0 0.0 0 2 4 6 8 10 12 14 16 18 20 0 4 8 12 16 20 24 28 Q , Total Gate Charge (nC) G V Gate -to -Source Voltage (V) GS, Fig 1. Typical On-Resistance vs. Gate Voltage Fig 2. Typical Total Gate Charge vs. Gate-to-Source Voltage T measured with thermocouple mounted to top (Drain) of part. Click on this section to link to the appropriate technical paper. C Repetitive rating pulse width limited by max. junction temperature. Click on this section to link to the DirectFET Website. Starting T = 25C, L = 1.45mH, R = 25, I = 11A. Surface mounted on 1 in. square Cu board, steady state. J G AS www.irf.com 1 11/12/07 Typical R (m) DS(on) V , Gate-to-Sou rce Voltage (V) GS Static T = 25C (unless otherwise specified) J Conditions Parameter Min. Typ. Max. Units V = 0V, I = 250A BV Drain-to-Source Breakdown Voltage 30 V GS D DSS Reference to 25C, I = 1mA V /T Breakdown Voltage Temp. Coefficient 23 mV/C DSS J D V = 10V, I = 13A R Static Drain-to-Source On-Resistance 4.7 7.7 m GS D DS(on) V = 4.5V, I = 11A 8.0 10.8 GS D V = V , I = 50A V Gate Threshold Voltage 1.4 1.8 2.4 V DS GS D GS(th) V /T Gate Threshold Voltage Coefficient -5.9 mV/C GS(th) J I Drain-to-Source Leakage Current 1.0 A V = 24V, V = 0V DS GS DSS V = 24V, V = 0V, T = 125C 150 DS GS J I V = 20V Gate-to-Source Forward Leakage 100 nA GSS GS V = -20V Gate-to-Source Reverse Leakage -100 GS V = 15V, I = 11A gfs Forward Transconductance 25 S DS D Q Total Gate Charge 11 17 g Q V = 15V Pre-Vth Gate-to-Source Charge 2.4 gs1 DS V = 4.5V Q Post-Vth Gate-to-Source Charge 1.2 nC GS gs2 I = 11A Q Gate-to-Drain Charge 4.3 gd D Q Gate Charge Overdrive 3.5 See Fig. 15 godr Q Switch Charge (Q + Q ) 5.5 sw gs2 gd Q V = 16V, V = 0V Output Charge 11 nC DS GS oss R Gate Resistance 1.4 2.5 G t V = 15V, V = 4.5V Turn-On Delay Time 11 d(on) DD GS I = 11A t Rise Time 7.8 ns D r t R = 1.8 Turn-Off Delay Time 9.5 d(off) G t Fall Time 6.1 See Fig. 17 f C V = 0V Input Capacitance 1300 iss GS C V = 15V Output Capacitance 490 pF oss DS C Reverse Transfer Capacitance 150 = 1.0MHz rss Diode Characteristics Parameter Min. Typ. Max. Units Conditions I Continuous Source Current 52 MOSFET symbol S (Body Diode) A showing the I Pulsed Source Current 110 integral reverse SM (Body Diode) p-n junction diode. V T = 25C, I = 11A, V = 0V Diode Forward Voltage 0.81 1.0 V SD J S GS T = 25C, I = 11A t Reverse Recovery Time 19 29 ns rr J F Q di/dt = 250A/s Reverse Recovery Charge 26 39 nC rr Pulse width 400s duty cycle 2%. 2 www.irf.com